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111.
Hisamoto D. Umeda K. Nakamura Y. Kimura S. 《Electron Devices, IEEE Transactions on》1997,44(6):951-956
This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability 相似文献
112.
The changes in the magnetization of yttrium iron garnet (YIG) when irradiated by a pulsed neodymium laser beam with wavelength
λ=1.06 μm are investigated. Measurements are performed in the temperature range from 100 K to 600 K in various external magnetic
fields. YIG single crystals grown along the crystallographic (100), (110), and (111) directions are chosen so that the external
anisotropy of the indicated processes can be determined. Characteristic temperature intervals dominated by different mechanisms
of variation of the magnetization under the influence of a laser pulse are discussed.
Fiz. Tverd. Tela (St. Petersburg) 39, 1263–1266 (July 1997) 相似文献
113.
L. K. Aminov I. N. Kurkin D. A. Lukoyanov K. P. Chernov 《Physics of the Solid State》1997,39(8):1184-1186
Results are reported for measurements of the spin-lattice relaxation times of E′1 centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz
over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of
the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm−1. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency
dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation
of irradiation centers in crystalline quartz and quartz glass.
Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997) 相似文献
114.
Whittum D.H. Ebihara K. Hiramatsu S. Kishiro J.-i. Monaka T. Ozaki T. Takayama K. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》1993,21(1):136-141
Studies of microwave amplification with an in-focused electron beam drawn from an induction injector are reported. A free-electron laser (FEL) operating at 9.4 GHz and employing ion-focusing within the interaction region has achieved power in excess of 30 MW at 9.4 GHz, with a beam energy of 0.8 MeV and current of 0.7 kA. Peak gain is 20 dB/m, with no saturation after 15 wiggler periods. Also reported are the first evolution and detuning data for an ion-channel laser/maser (ICL). Two shortcomings of the prematurely halted ICL studies are poor frequency discrimination and a large axial plasma gradient. Prospects for operation with an upgraded 1.6 MeV accelerator are discussed 相似文献
115.
116.
Seghir K. Cristoloveanu S. Jerisian R. Oualid J. Auberton-Herve A.-J. 《Electron Devices, IEEE Transactions on》1993,40(6):1104-1111
The leakage and charge pumping currents were measured in gate-controlled MOS p-i-n diodes fabricated on thin SIMOX substrates. The efficiencies of the techniques as well as their complementary features are analyzed for various experimental conditions. The interface properties of device-grade SIMOX wafers are characterized and shown to be compatible with VLSI requirements. Special interface coupling effects, which occur only in fully depleted SOI devices and modify the conventional signature of charge pumping and leakage current, are thoroughly investigated 相似文献
117.
Tajiri A. Minakuchi K. Komeda K. Bessho Y. Inoue Y. Yodoshi K. Yamaguchi T. 《Electronics letters》1993,29(4):369-370
A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimising its structure with a 0.8 mu m thick p-cladding layer, a 1200 mu m long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 degrees C was confirmed for more than 1200 h. Optical feedback noise was below 3*10/sup -14/ Hz/sup -1/.<> 相似文献
118.
119.
GaAs MESFETs were fabricated using a spin-on platinum source as the gate material. They were subsequently aged at 200°C for up to 1000 h. DC electrical characterisation of the MESFETs was carried out during various stages of annealing. The aging behaviour of these MESFETs was compared with those fabricated using conventionally evaporated platinum sources. The results show that the performance of the MESFETs fabricated using a spin-on platinum source is comparable to those of MESFETs fabricated using a conventionally evaporated platinum source 相似文献
120.
Kawai S. Iwatsuki K. Suzuki K. Nishi S. Saruwatari M. Sato K. Wakita K. 《Electronics letters》1994,30(3):251-252
The authors demonstrate 10 Gbit/s optical soliton transmission in a recirculating loop through the use of a monolithically integrated MQW-DFB-LD/MQW-EA modulator light source. The timing jitter due to the Gordon-Haus effect is successfully reduced by the optical bandpass filters conventionally used in the cascaded EDFAs to avoid the accumulation of amplified spontaneous emission. The transmission distance of 7200 km is achieved at a bit error rate of 10-9 相似文献