基于SEP3203的高精度功耗测量仪器设计

重点阐述高精度功耗检测仪器及其软件的开发工作。本仪器以东南大学ASIC工程中心自主研发的基于ARM7TDMI的SEP3203嵌入式微处理嚣为核心处理器，以TI公司的高精度数模转换器ADS1210为转换器件实现模／数转换。采集器共设16个通道，通道与通道之间采用小体积固态继电器M211进行输入量隔离厦通道选通，并用TI公司的程控放大器PGA204对较小信号进行放大以匹配AD转换器的输入量程，有效提高了测量精度。本仪器通过RS485与PC机相连，电气隔离良好，具有较高的工作稳定性。     

Surface-mount dual-loop antenna for 2.4/5 GHz WLAN operation

A surface-mount dual-loop antenna suitable for dual-frequency WLAN operation is presented. For achieving dual-frequency operation with a compact size, the antenna comprises two loop strips of different sizes printed on a flexible printed circuit board, which is then bent and attached onto a foam base of compact size. The antenna shows an attractive feature of high antenna gain, about 4 and 5 dBi for frequencies across the 2.4 and 5 GHz WLAN bands, respectively.     

控制CCL产量的几点分析

研究了如何在不进行设备改造的情况下,提高CCL产量的方法,指出了从四大工序入手是解决问题的关键。     

A compact LTCC branch-line coupler UsingModified-T equivalent-circuit modelfor transmission line

In this letter, a compact branch-line coupler is proposed by making good use of the three-dimensional layout capability of the low-temperature co-fired ceramic (LTCC) substrate. This branch-line coupler is accomplished by using lumped-inductors and lumped-capacitors to realize the modified-T equivalent-circuit model for the transmission line so that the circuit size may drastically be reduced. Specifically, a very compact LTCC branch-line coupler with a size of 0.079/spl lambda//spl times/0.0717/spl lambda/ is implemented and carefully examined, where /spl lambda/ is the wavelength of the multilayer structure at the operating frequency f/sub 0/.     

A push mechanism for GPRS supporting private IP addresses

The General Packet Radio Service (GPRS) provides a packet switched data service for mobile users. However, the existing GPRS specification does not provide the push mechanism and it is difficult to support GPRS services such as call termination (incoming call) for wireless voice over IP (VoIP). Based on the short message service, this paper proposes a push mechanism for GPRS supporting private IP addresses. Our approach does not need to modify the existing GPRS structure.     

Enhancement of underfill capillary flow in flip-chip packaging by means of the inertia effect

This paper describes how the use of inertia forces induced by the rotation of a working disk may be adopted to increase the fill rate of the flip-chip packaging process and thereby reduce the process cycle time. It is shown how the driving forces resulting from the inertia effect are determined by the Weber number. The constant and varying contact angle models are compared under a specified set of process conditions. The calculated flow behavior results indicate that the relationship between the contact angle, the average fluid velocity, the liquid-air interface position, and the filling time depends upon the Weber number. The constant and varying contact angle models are utilized in the analysis of a new processing method referred to as rotation-enhanced underfill packaging (REUP). The inertia effect induced by the angular motion of the working disk is shown to enhance the flow of the underfill encapsulant and to reduce the time of the underfill process. The present results confirm that the rotation of the working disk leads to an increased underfill capillary flow rate, which is beneficial in reducing the production cycle time of the flip-chip packaging process.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)