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71.
Recently, molecular imaging has been rapidly developed to studyphysiological and pathological processes in vivo at the cellularand molecular levels. Among molecular imaging modalities, opticalimaging has attracted a major attention for its unique advantages.In this paper, we establish a mathematical framework for multispectralbioluminescence tomography (BLT) that allows simultaneous studiesof multiple optical reporters. We show solution existence, uniquenessand continuous dependence on data as well as the limiting behaviourswhen the regularization parameter approaches zero or when thepenalty parameter approaches infinity. Then, we propose twonumerical schemes for multispectral BLT and derive error estimatesfor the corresponding solutions. 相似文献
72.
73.
Longitudinal study has become one of the most commonly adopted designs in medical research. The generalized estimating equations (GEE) method and/or mixed effects models are employed very often in causal inferences. The related model diagnostic procedures are not yet fully formalized, and perhaps never will be. The potential causes of major problems are the high variety of the dependence within subjects and/or the number of repeated measurements. A single testing procedure, e.g., run test, is not possible to resolve all model diagnostics problems in longitudinal data analysis. Multiple quantitative indexes for model diagnostics are needed to take into account this variety. We propose eight testing procedures for randomness accompanied with some conventional and/or non-conventional plots to remedy model diagnostics in longitudinal data analysis. The proposed issue in this paper is well illustrated with four clinical studies in Taiwan. 相似文献
74.
H.L. Li H.T. Lin Y.H. Wu T. Liu Z.L. Zhao G.C. Han T.C. Chong 《Journal of magnetism and magnetic materials》2006
We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature. 相似文献
75.
H. Tsukamoto T.D. Boone J. Han J.M. Woodall 《Photonics Technology Letters, IEEE》2005,17(7):1411-1413
We present a novel optical switching technique utilizing emission packet positioning of semiconductor heterostructure. A modulation-doped p-AlGaAs-GaAs heterostructure is employed to control spontaneous emission packet positioning with electric fields. Emission packets generated by optical input signals are brought over 150 /spl mu/m with electric fields, so the output fibers can detect the emission intensity as signals. The first-order analysis indicates that the drift velocity of minority electrons in GaAs limits the detectable maximum data rate and nanoseconds timescale signal routing operation at 20 Gb/s is possible at an electron drift velocity of 2/spl times/10/sup 7/ cm/s. 相似文献
76.
就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究,并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结,其结电阻与面积的积 矢的绝对误差在10% 以内,隧穿磁电阻的绝对误差在7% 以内,样品的磁性隧道结性质具有较好的均匀性和一致性,可以满足研制磁随机存储器存储单元演示器件的基本要求.
关键词:
磁性隧道结
隧穿磁电阻
磁随机存储器
4英寸热氧化硅衬底 相似文献
77.
78.
Onishi K. Rino Choi Chang Seok Kang Hag-Ju Cho Young Hee Kim Nieh R.E. Jeong Han Krishnan S.A. Akbar M.S. Lee J.C. 《Electron Devices, IEEE Transactions on》2003,50(6):1517-1524
Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs. 相似文献
79.
80.
Wei-Hua Guo Yong-Zhen Huang Chun-Lin Han Li-Juan Yu 《Quantum Electronics, IEEE Journal of》2003,39(6):716-721
To improve the accuracy of measured gain spectra, which is usually limited by the resolution of the optical spectrum analyzer (OSA), a deconvolution process based on the measured spectrum of a narrow linewidth semiconductor laser is applied in the Fourier transform method. The numerical simulation shows that practical gain spectra can be resumed by the Fourier transform method with the deconvolution process. Taking the OSA resolution to be 0.06, 0.1, and 0.2 nm, the gain-reflectivity product spectra with the difference of about 2% are obtained for a 1550-nm semiconductor laser with the cavity length of 720 /spl mu/m. The spectra obtained by the Fourier transform method without the deconvolution process and the Hakki-Paoli method are presented and compared. The simulation also shows that the Fourier transform method has less sensitivity to noise than the Hakki-Paoli method. 相似文献