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41.
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.  相似文献   
42.
A novel frame interpolation technique for two-band linear predictive coding (LPC) vocoders is proposed for maintaining natural speech quality at bit rates below 1 kbit/s. Experimental results show that the speech quality of the proposed vocoder is quite natural at bit rates 880 bit/s and comparable to that of 4.8 kbit/s CELP  相似文献   
43.
A new method, based on zero point of longitudinal electric field, was used to determine the spatial resolution of external electro-optic (EO) probing equipment. Considering the diffraction of Gauss beam, the result of external EO probing was simulated which was in accordance with the experiment. A spatial resolution <1 μm was demonstrated initially in our equipment using 650 nm laser diode as probe beam and semi-insulating GaP as probe tip.  相似文献   
44.
Suppose μ is a Radon measure on ℝ d , which may be non doubling. The only condition assumed on μ is a growth condition, namely, there is a constant C0>0 such that for all x∈supp(μ) and r>0, μ(B(x, r))⪯C0rn, where 0<n⪯d. We prove T1 theorem for non doubling measures with weak kernel conditions. Our approach yields new results for kernels satisfying weakened regularity conditions, while recovering previously known Tolsa’s results. We also prove T1 theorem for Besov spaces on nonhomogeneous spaces with weak kernel conditions given in [7].  相似文献   
45.
We present an interpolating, univariate subdivision scheme which preserves the discrete curvature and tangent direction at each step of subdivision. Since the polygon have a geometric information of some original (in some sense) curve as a discrete curvature, we can expect that the limit curve has the same curvature at each vertex as the control polygon. We estimate the curvature bound of odd vertices and give an error estimate for restoring a curve from sampled vertices on curves.  相似文献   
46.
在本文中,给定一组有序空间数据点列及每个数据点的切矢向量,利用加权二次有理Bézier曲线对数据点作插值曲线,使该曲线具有C1连续性,并且权因子只是对相应顶点曲线附近产生影响,同调整两个相邻的权因子可以调整这两个相邻顶点之间的曲线和它的控制多边形.  相似文献   
47.
HL-2A is the first divertor tokamak in China. The vacuum system is one of the important parts of the HL-2A tokamak, which has to be work well during the physics campaign in 2004. As the tokamak machine is separated from the operation staff during discharges, to guarantee the safe and reliable operation of the vacuum system, it is necessary to watch the vacuum system outside the machine hall with an automatic monitoring system. The paper describes the design and manufacture of the monitoring system.  相似文献   
48.
The vacuum system of today's tokamak devices is designed to meet the operational requirements of the experiments. The operation can be divided into five modes, (1) pumping down and leak detecting of the vacuum vessel, (2) baking, (3) plasma-facing component (PFC) conditioning, (4)evacuating and controlling of the particles at plasma edge, (5) plasma discharge experiments.  相似文献   
49.
韩兆福 《电子工程师》2005,31(10):77-79
蓝牙技术是一种短距离无线通信技术,具有低成本、低功耗、灵活、快速、抗干扰能力强等特点,目的是取代终端的连接电缆.为提高部队的作战效能,采用蓝牙技术和计算机测量与控制技术,研制了机载火控故障诊断系统;该系统在实际应用中取得了良好效果,并具有诊断结果准确、自动化程度高、工作稳定可靠、操作简便、易于转移和维护等优点,为技术人员进行机载火控系统的性能检测与故障诊断提供了便利.  相似文献   
50.
Anomalous threshold voltage roll-up behavior, commonly referred as reverse short channel effect (RSCE), has been observed in high-k (HfO2 on SiON buffer, Al2O3 on SiON buffer) gated submicron nMOSFETs, while the SiO2 or SiON control samples show normal short channel effect (SCE) behavior. The possible causes such as inhomogeneous channel doping profile and gate oxide thickness variation near S/D ends have been ruled out. The results indicate that interface trap density that dependents on channel length is the main cause of the RSCE observed here. In addition, oxide charge also plays a role.  相似文献   
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