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51.
论文将Fermat素性检验的思想运用于不可约多项式的判断,给出了一个对于不可约判断问题的Monte Carlo 算法,分析了该算法的计算复杂度问题,并且给出了次数在200以内的检验结果。 相似文献
52.
Shiao-Shien Chen Tung-Yang Chen Tien-Hao Tang Jin-Lian Su Tzer-Min Shen Jen-Kon Chen 《Electron Devices, IEEE Transactions on》2003,50(7):1683-1689
This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs. 相似文献
53.
54.
55.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
56.
Shuqin Fan Wenbao Han 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(6):1553-1557
Using the estimates of the exponential sums over Galois rings, we discuss the random properties of the highest level sequences /spl alpha//sub e-1/ of primitive sequences generated by a primitive polynomial of degree n over Z(2/sup e/). First we obtain an estimate of 0, 1 distribution in one period of /spl alpha//sub e-1/. On the other hand, we give an estimate of the absolute value of the autocorrelation function |C/sub N/(h)| of /spl alpha//sub e-1/, which is less than 2/sup e-1/(2/sup e-1/-1)/spl radic/3(2/sup 2e/-1)2/sup n/2/+2/sup e-1/ for h/spl ne/0. Both results show that the larger n is, the more random /spl alpha//sub e-1/ will be. 相似文献
57.
This paper proposes a method to reduce the vibration of the three-phase HB-type stepping motor with cogging torque by the feedforward compensation control. The compensation signal to suppress the vibration of the motor frame is obtained by the repetitive controller installing an online Fourier transformer and utilizing an acceleration sensor attached to the motor frame or an acoustic sensor such as a microphone placed close to the frame. The sensor is used only for the acquisition of the feedforward compensation data. The feedforward compensation signal at an arbitrary operating point is derived from the amplitude and phase data of the frequency components and the operating point data. Compensation data obtained by the repetitive controller is applied to the operating point changed by reference frequency and load condition in steady state. The compensation signal for the new operating point will be generated from compensation data utilizing polynomial equation approximation and linear interpolation method. The effectiveness of this proposed method is confirmed by the experimental results. 相似文献
58.
射频板条CO_2激光器并联谐振技术的研究 总被引:1,自引:0,他引:1
本文利用周期性网络模型计算了射频板条CO2激光器电极的纵向电压分布.探讨了并联谐振技术在板条器件中获得成功运用的原因.提出了利用并联谐振技术进一步提高电压分布均匀性的两个途径. 相似文献
59.
60.
This paper reports that the growth of RuOx(110) thin layer growth on Ru(0001)
has been investigated by means of scanning tunnelling microscope (STM). The STM
images showed a domain structure with three rotational domains of RuOx(110)
rotated by an angle of 120℃.
The as-grown RuOx(110) thin layer is expanded from the bulk-truncated
RuOx(110) due to the large mismatch between RuOx(110) and the
Ru(0001) substrate. The results also indicate that growth of RuOx(110)
thin layer on the Ru(0001) substrate by oxidation tends first to formation
of the Ru-O (oxygen) chains in the [001] direction of RuOx(110). 相似文献