Extended application of the complex source-point theory

In this paper, the complex source-point theory used for a symmetric concave spherical resonator is extended to an asymmetric concave spherical resonator. Thus, the formulae for the field distribution of the asymmetric spherical resonator can be easily deduced from the formulae for the field distribution of the symmetric resonator, thereby the application range of the complex source-point theory is enlarged and a convenient method is provided for the field analysis of an arbitrary spherical resonator.     

Optimization of the surface texture for silicon carbide sliding in water

Surface texturing has been recognized as an effective means to improve the tribological performances of sliding surfaces. Usually, generation additional hydrodynamic pressure to increase the load carrying capacity is regarded as the most significant effect of surface texture. In the case of silicon carbide sliding against identical material in water, the experimental results indicate that surface texture is also helpful to improve the running-in progress to smooth the contact surfaces, showing another reason to result in low friction. Based on the consideration of enhancing the generation of hydrodynamic pressure and improving running-in progress, a surface texture pattern, which was combined with large (circle, 350 μm in diameter) and small (rectangular, 40 μm in length) dimples, was designed to maximize the texture effect on the load carrying capacity of SiC surfaces sliding in water. The friction coefficient of such textured surface was evaluated and compared with that of untextured and those only with large or small dimples only. The friction reduction mechanisms of the patterns with different dimples in size are discussed.     

一类多维指数分布的参数估计

考虑生存函数为(F)(x1,x2,…,xn)=P{X1＞x1,…,Xn＞xn}=exp{-[n∑i=1(xi/θi)1/δ]δ}(0＜xi＜∞,0＜δ≤ 1,0＜θi＜∞,i=(1,n))的一类多维指数分布,给出了它的密度函数的表示式,并讨论了它的性质.提出了相关参数δ的估计(^δ),证明了(^δ)有相合性和渐近正态性,得到了(^δ)的渐近方差σ2δ.最后还给出了若干随机模拟的结果.     

k-树的补图的最小填充和树宽

一个图的最小填充问题是寻求边数最少的弦母图,一个图的树宽问题是寻求团数最小的弦母图,这两个问题分别在稀疏矩阵计算及图的算法设计中有非常重要的作用．一个k-树G的补图G称为k-补树．本文给出了k-补树G的最小填充数f(G) 及树宽TW(G)．     

Hilbert重级数定理的一个改进

The object of this note is to prove the followingTheorem Let{a_n}and{b_n}be sequences of real numbers such that0<∑∑a_n~2<+∞and0<∑b_n~2<+∞.Then we have the inequalitysum from m=1 to∞sum from n=1 to∞a_mb_n/m+n<{sum from n=1 to∞(π-θ/n~(1/2)a_n~2}~1/2{sum from n=1 to∞(π-θ/n~(1/2)b_n~2}~1/2 (1)whereθ=3/2~(1/2)-1=1.121320343.     

New ligands for the Fe(III)‐mediated reverse atom transfer radical polymerization of methyl methacrylate

A series of (di)picolinic acids and their derivates are investigated as novel complexing tridentate or bidentate ligands in the iron‐mediated reverse atom transfer radical polymerization of methyl methacrylate in N,N‐dimethylformamide at 100 °C with 2,2′‐azobisisobutyrontrile as an initiator. The polymerization rates and polydispersity indices (1.32–1.8) of the resulting polymers are dependent on the structures of the ligands employed. Different iron complexes may be involved in iron‐mediated reverse atom transfer radical polymerization, depending on the type of acid used. ¹H NMR spectroscopy has been used to study the structure of the resulting polymers. Chain‐extension reactions have been performed to further confirm the living nature of this catalytic system. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2912–2921, 2006     

Nanostructured thermoset epoxy resin templated by an amphiphilic poly(ethylene oxide)‐block‐poly(dimethylsiloxane) diblock copolymer

An amphiphilic poly(ethylene oxide)‐block‐poly(dimethylsiloxane) (PEO–PDMS) diblock copolymer was used to template a bisphenol A type epoxy resin (ER); nanostructured thermoset blends of ER and PEO–PDMS were prepared with 4,4′‐methylenedianiline (MDA) as the curing agent. The phase behavior, crystallization, hydrogen‐bonding interactions, and nanoscale structures were investigated with differential scanning calorimetry, Fourier transform infrared spectroscopy, transmission electron microscopy, and small‐angle X‐ray scattering. The uncured ER was miscible with the poly(ethylene oxide) block of PEO–PDMS, and the uncured blends were not macroscopically phase‐separated. Macroscopic phase separation took place in the MDA‐cured ER/PEO–PDMS blends containing 60–80 wt % PEO–PDMS diblock copolymer. However, the composition‐dependent nanostructures were formed in the cured blends with 10–50 wt % PEO–PDMS, which did not show macroscopic phase separation. The poly(dimethylsiloxane) microdomains with sizes of 10–20 nm were dispersed in a continuous ER‐rich phase; the average distance between the neighboring microdomains was in the range of 20–50 nm. The miscibility between the cured ER and the poly(ethylene oxide) block of PEO–PDMS was ascribed to the favorable hydrogen‐bonding interaction. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3042–3052, 2006     

On the realization of Riemannian symmetric spaces in Lie groups

In this paper we give a realization of some symmetric space G/K as a closed submanifold P of G. We also give several equivalent representations of the submanifold P. Some properties of the set gK∩P are also discussed, where gK is a coset space in G.     

数字散斑干涉技术及应用

介绍了数字散斑干涉技术在位移、应变、振动和医学诊断等领域中的应用和国内外发展状况。提出了一种新的应用领域—数字散斑干涉技术在语音识别中的应用,并对该方法作了介绍,讨论了它的特点。     

A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.