硼预淀积对自组织生长Ge量子点尺寸分布的影响

研究了以不同B2H6流量预淀积硼对UHV/CVD自组织生长Ge量子点尺寸分布的影响。在适当的生长条件下,得到了尺寸分布很窄的均匀Ge量子点,用AFM对量子点的形貌进行观察,Ge量子点尺寸的涨落小于±3%,量子点的水平尺寸和高度分别为60nm和10nm,密度为8×109cm-2。实验结果表明,通过预淀积硼表面处理,可以得到尺寸分布很窄的量子点,以满足量子点光电器件方面应用的要求。     

正方分布的4×4单模光纤熔锥耦合器耦合特性分析

本文以线性耦合波方程为基础,采用散射矩阵的方法讨论了具有正方分布的4×4单模光纤熔锥形耦合器的耦合特性,并与实验作了比较,得到了比较一致的结果。     

光纤温度传感器综述

本文阐述了温度传感器的概况和使用要求，详细地论述了目前国外各类光纤温度传感器的原理、结构、特点、技术水平和发展状况。     

Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.     

基于Web的选课支持系统

为了在选课之前给予学生充分的信息支持,使选课更有针对性和透明性,建设基于Web的选课支持系统是一项有意义的工作.提出了系统的三层体系结构及系统构成,分析了各子系统的功能,给出系统实现的关键技术,运行实践表明,该系统具有很好的信息支持效果.     

质子滴线区新的缓发质子先驱核121Ce

藉助核反应⁹²Mo(³²S ,3n)产生了未知的缓发质子先驱核¹²¹Ce ,并利用氦喷嘴快速带传输系统和“p-γ”符合方法对它进行了鉴别 .测定了¹²¹Ce的半衰期 ( 1.1±0 .1 )s,观测了它的β缓发质子能谱 ,粗略地估计了它的β缓发质子衰变道的分支比约为1% .首次观测了先驱核¹¹⁹Ba,¹²¹Ba和¹²²La经过β缓发衰变在“子核”中产生的低位能级到基态的γ 跃迁.     

Random discrete PWM method for DC-DC power converters

A random discrete pulse-width modulation (RDPWM) scheme is examined and compared with the randomised pulse-position modulation (RPPM) method for DC-DC power conversion. The RDPWM method has no switching harmonics while the RPPM method has significant switching harmonics. Power spectral characteristics of the two methods are presented and discussed     

光纤光栅最佳切趾函数的研究

采用耦合模理论，给出了用传输矩阵法计算光纤Bragg光栅（FBG）特性的方法，进而得到了在不同切趾函数形式下的FBG反射谱的数值解。通过理论分析，给出了最佳切趾函数反射谱和群时延特性曲线。     

分离变量法与等腰直角三角形波导的边值问题

根据叠加原理，讨论等腰直角三角形波导边值问题的IE波解和TM波解，纠正有关文献中的错误解法，指出分离变量法的适用条件。     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.