1400-1500 nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO_4 Laser

Different material-doped Raman fiber lasers with very high efficiency operating in continuous-wave are presented.With 1 W Nd∶YVO 4 laser pumping at wavelength of 1 342 nm, single mode output power of above 500 mW (optical-to-optical conversion efficiency of 50%) is simulated in the range of 1 400-1 500 nm.Using high-germanium,high-phosphate and high-borate silicate fibers as the gain medium,laser output at wavelengths of 1 420,1 450,1 480 and 1 495 nm can be achieved with different geometries,which are just as pumping C-band and L-band distributed Raman fiber amplifiers.     

Crystallographic report: Bis(norfloxacin)dilead(II) tetranitrate, [Pb2(H‐Norf)2(ONO2)4]

The centrosymmetric binuclear structure of [Pb₂(H‐Norf)₂(ONO₂)₄]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd.     

The Monitoring System Using FOBG Sensor for The Health of the Rocket

A novel heath monitoring system of the rocket based on fiber optic Bragg gratings is brought forward, its component units and working principle are also described.     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

被动锁模复合环形腔掺饵光纤激光器的自启动分析

本文对被动锁模复合环形腔掺饵光纤激光器的自启动工作特性进行了分析，指出谐振腔内残余反射面的存在是阻碍激光器实现自启动锁模的主要原因。利用半导体激光器有源区的折射率随注入电流的变化而改变的特性，在谐振腔中获得了一个可移动腔镜，克服了腔内残余反射面的影响，实现了锁模的自启动。     

Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.     

HL—1装置碳化和采用抽气孔栏时的可见辐射观测

本文描述了HL-1装置器壁碳化和采用抽气孔栏时,氢及杂质通量的变化情况;利用多道可见辐射的时空分布测量,得到了MARFE放电,在产生MARFE时,辐射热也相应增强。     

脱镁叶绿素a和脱镁叶绿素b的联合同步荧光分析法

建立了脱镁叶绿素a和脱镁叶绿素b的联合同步荧光分析法。方法简便快速。脱镁叶绿素a和脱镁叶绿素b的线性范围分别为0～400ng/ml和0～200ng/ml,检出限分别为1ng/ml和0.5ng/ml。     

一种图文数据库系统的设计与实现

随着计算机技术的发展和水平的提高，图像，声音，图形等多媒体信息逐步应用于管理信息系统之中。文章中提出了图文数据库系统设计中存在的三个基本问题。讨论了介绍了图文数据库系统的设计方法和实现技术。