A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy

A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50%     

中国增值电信业务的发展与思考

增值电信业务是指利用公共网络基础设施提供附加的电信与信息服务业务,其实现的价值使原有基础网路的经济效益或功能价值增高.从业务分类上,它对应于基础电信业务.增值电信业务的主要特征是面向社会提供信息服务.……     

Integration and propagation of a multi-criteria decision making model in constraint programming

In this paper we propose a general integration scheme for a Multi-Criteria Decision Making model of the Multi-Attribute Utility Theory in Constraint Programming. We introduce the Choquet integral as a general aggregation function for multi-criteria optimization problems and define the Choquet global constraint that propagates this function during the Branch-and-Bound search. Finally the benefits of the propagation of the Choquet constraint are evaluated on the examination timetabling problem.     

Resolvability properties via independent families

The authors give a consistent affirmative response to a question of Juhász, Soukup and Szentmiklóssy: If GCH fails, there are (many) extraresolvable, not maximally resolvable Tychonoff spaces. They show also in ZFC that for ω<λ?κ, no maximal λ-independent family of λ-partitions of κ is ω-resolvable. In topological language, that theorem translates to this: A dense, ω-resolvable subset of a space of the form (DI(λ)) is λ-resolvable.     

An Implicit Iteration Process with Errors for a Finite Family of r-strictly Asymptotically Pseudocontractive Mappings

In this paper,we will establish several strong convergence theorems for the approximation ofcommon fixed points of r-strictly asymptotically pseudocontractive mappings in uniformly convex Banachspaces using the modiied implicit iteration sequence with errors,and prove the necessary and sufficient conditionsfor the convergence of the sequence.Our results generalize,extend and improve the recent work,in thistopic.     

X射线三轴晶衍射法测量半绝缘GaAs单晶的化学配比

采用X射线三轴晶衍射法,根据As间隙原子对作为过量As在GaAs单晶材料中存在的主要形式的模型,可以无损、高精度测量半绝缘GaAs单晶的化学配比.并探讨了引起晶格变化的原因及其与熔体组分的关系,对于制备高质量GaAs单晶及其光电器件具有重要的意义.     

空位在金刚石近(001)表面扩散的分子动力学模拟

用分子动力学方法模拟了空位在金刚石近(001)表面的扩散过程,研究了温度对空位扩散的影响.结果表明,当温度为1000K左右时,位于近表面第二层上的空位开始向表面运动;当温度在1400—2000K时,空位完全扩散到表面.这与实验结果和其他计算结果符合得很好.同时发现,温度为1400—1800K时,空位的扩散经历了两次迁移运动,其分别对应了均方位移图中的两个极大值.在不施加任何约束的条件下得到了空位的动态扩散路径,空位在金刚石近(001)表面的扩散势垒约为042eV.并探讨了一定温度下空位数目增多及其不同排列 关键词： 金刚石 空位 扩散 分子动力学     

Vibrational Dynamics Studies by Nuclear Resonant Inelastic X-Ray Scattering

Nuclear resonant inelastic X-ray scattering of synchrotron radiation is being applied to ever widening areas ranging from geophysics to biophysics and materials science. Since its first demonstration in 1995 using the ⁵⁷Fe resonance, the technique has now been applied to materials containing ⁸³Kr, ¹⁵¹Eu, ¹¹⁹Sn, and ¹⁶¹Dy isotopes. The energy resolution has been reduced to under a millielectronvolt. This, in turn, has enabled new types of measurements like Debye velocity of sound, as well as the study of origins of non-Debye behavior in presence of other low-energy excitations. The effect of atomic disorder on phonon density of states has been studied in detail. The flux increase due to the improved X-ray sources, crystal monochromators, and time-resolved detectors has been exploited for reducing sample sizes to nano-gram levels, or using samples with dilute resonant nuclei like myoglobin, or even monolayers. Incorporation of micro-focusing optics to the existing experimental setup enables experiments under high pressure using diamond-anvil cells. In this article, we will review these developments. This revised version was published online in August 2006 with corrections to the Cover Date.     

电子辐照诱发固态相变导致的氮化硼纳米结构生长

报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词： 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物