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101.
Multicast (MC) routing algorithms capable of satisfying the quality of service (QoS) requirements of real-time applications will be essential for future high-speed networks. We compare the performance of all of the important MC routing algorithms when applied to networks with asymmetric link loads. Each algorithm is judged based on the quality of the MC trees it generates and its efficiency in managing the network resources. Simulation results over random networks show that unconstrained algorithms are not capable of fulfilling the QoS requirements of real-time applications in wide-area networks. Simulations also reveal that one of the unconstrained algorithms, reverse path multicasting (RPM), is quite inefficient when applied to asymmetric networks. We study how combining routing with resource reservation and admission control improves the RPM's efficiency in managing the network resources. The performance of one semiconstrained heuristic, MSC, three constrained Steiner tree (CST) heuristics, Kompella, Pasquale, and Polyzos (1992), constrained adaptive ordering (CAO), and bounded shortest multicast algorithm (BSMA), and one constrained shortest path tree (CSPT) heuristic, the constrained Dijkstra heuristic (CDKS) are also studied. Simulations show that the semiconstrained and constrained heuristics are capable of successfully constructing MC trees which satisfy the QoS requirements of real-time traffic. However, the cost performance of the heuristics varies. The BSMA's MC trees are lower in cost than all other constrained heuristics. Finally, we compare the execution times of all algorithms, unconstrained, semiconstrained, and constrained  相似文献   
102.
Chemical interactions at the phase boundaries of materials applied for the solid oxide fuel cell (SOFC) have been studied by EPMA. The chemical reactivity at the interface of Lay-xSrxMnO3/ZrO2-Y2O3 is dependent on the stoichiometry (y) and the Sr content (x) of the perovskite. Typical reaction products (zirconates) and a diffusion zone in the ZrO2–Y2O3 have been observed. The extension of cation release (Mn) is related to the increasing chemical activity of Mn oxide in the perovskite by the Sr substitution for La. The wettability of the metal/oxide interface in the anode cermet (Ni/ZrO2–Y2O3) has been found to be influenced by chemical reactions resulting from the applied reducing atmosphere with high carbon activity. The disintegration of ZrO2–Y2O3 in contact with molten Ni or Ni-Ti and Ni-Cr alloys leads to the redeposition of Y2O3-enriched oxides and also to Zr-rich intermetallic compounds and eutectics.  相似文献   
103.
The authors have implemented chirped distributed feedback (DFB) grating lasers with phase shifts [λ/8, 2λ/8 and 3λ/8] distributed continuously over various axial distances, using their recently proposed method for producing bent optical waveguides. The singlemode stability of the lasers with distributed phase shifts was found to be considerably higher than for lasers with abrupt phase shifts  相似文献   
104.
This paper describes a prototype video coding platform meant for the conception and testing of multimedia products such as next-generation videophones. The platform is largely based on ITU-T Recommendation H.263, with a number of additional object-oriented quality enhancement features which make it especially well suited for very low bit-rate coding of “head-and-shoulders” video material typical of real-time multimedia applications, video teleconferencing, and video telephony. These features consist of: (1) segmentation into objects of interest, (2) segmentation-based prefiltering, (3) model-assisted rate control, (4) adaptive vector quantization, and finally (5) segmentation-based postfiltering. In the spirit of Recommendation H.263, these enhancements are modular and can be selectively turned on or off, thereby enabling a wide variety of coding modes  相似文献   
105.
The low temperature lifetime of electrons excited in the 2p?1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1so?2p?1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations.  相似文献   
106.
A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)  相似文献   
107.
The fracture behavior of a core-shell rubber (CSR) modified epoxy is investigated using both fracture mechanics and microscopy tools. The CSR-modified epoxy is found to be toughened via numerous line-array cavitations of the CSR particles, followed by plastic flow of the epoxy matrix. The toughening effect via the above craze-like damage process is found to be as effective as that of the well-known widespread rubber cavitation/matrix shear yielding mechanisms. The conditions for triggering the craze-like damage appear to be both stress state and rubber concentration dependent. The type of rubber tougheners utilized also plays a critical role in triggering this rather unusual craze-like damage in epoxy systems. © 1993 John Wiley & Sons, Inc.  相似文献   
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110.
For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors  相似文献   
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