A novel discrete control strategy for independent stabilization of parallel three-phase boost converters by combining space-vector modulation with variable-structure control

We propose a discrete nonlinear controller, developed in a synchronous frame, for a parallel three-phase boost converter consisting of two modules. The basic idea, however, can be extended to a system with N modules. Each of the closed-loop power-converter modules operates asynchronously without any communication with the other modules. The controller stabilizes the currents on the dq-axes and limits the flow of the pure-zero sequence current. It combines the space-vector modulation scheme with a variable-structure control, thereby keeping the switching frequency constant and achieving satisfactory dynamic performance.     

QMTool: an XML-based management platform for QoS-aware IP networks

Technological and human factors have contributed to the increasing complexity of the network management problem. Heterogeneity and globalization of network resources have, on one hand, increased user expectations for flexible and easy-to-use environments and, on the other, propounded entirely novel ways to face the management problem. Several research efforts recognize the need for integrated solutions to manage both network resources and services in open and global environments. Undoubtedly, these solutions should permit the coexistence of different management models and should interoperate with legacy systems. The presented management system, QoS management tool (QMTool), aspires to address the heterogeneity, complexity, and dynamic behavior of QoS-enabled IP networks by taking advantage of the optimum fit of a number of novel technologies. A layered framework architecture, including element, network management, and visualization service, is provided, and a high level of information abstraction in network configuration and monitoring is introduced mainly based on the capabilities of the Extensible Markup Language (XML). Moreover, the functional components for providing (re-)configuration, fault management monitoring, and network visualization facilities are also presented, followed by notes of implementation issues.     

Influence of eccentricity on the frequency limitations of circular-pad via-holes

We study the influence of the technologically caused eccentricity of a circular-pad via-hole. We derive an eigenvalue equation using a rigorous method based on a linear transformation of the via-hole polar coordinates. The eigenvalue equation is used to compute the modal resonant frequencies and the modal fields of the eccentric via. It is shown that the via-hole misalignment shifts the modal frequencies and influences its frequency band. The proposed model is verified with published experimental data, and is also compared with results generated with the full-wave simulator Agilent Momentum-2002.     

The sliding-window packet switch: a new class of packet switch architecture with plural memory modules and decentralized control

Shared-memory based packet switches are known to provide the best possible throughput performance for bursty data traffic in high-speed packet networks and internets compared with other buffering strategies under conditions of identical memory resources deployed in the switch. However, scaling of shared-memory packet switches to a larger size has been restricted mainly due to the physical limitations imposed by the memory-access speed and the centralized control for switching functions in shared-memory switches. A new scalable architecture for a shared-memory packet switch, called the sliding-window (SW) switch, is proposed to overcome these limitations. The SW switch introduces a new class of switching architecture, where physically separate multiple memory modules are logically shared among all the ports of the switch, and the control is decentralized. The SW switch alleviates the bottleneck caused by the centralized control of switching functions in large shared-memory switches. Decentralized switching functions enable the SW switch to operate in a pipeline fashion to enhance scalability and switching capacity compared with that of previously known classes of shared-memory switch architecture.     

Acquisition-time estimation for over 10 Gbit/s clock and data recovery ICs

A method to estimate the acquisition time for the clock and data recovery (CDR) IC using the linear phase-locked loop (PLL) technique is proposed. Estimations using the method follow the measured acquisition time for the PLL with any loop parameters, which makes it possible to design the CDR IC for various targets.     

Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology

A monolithic microwave frequency divider IC with an operating range of 1.4?5.3 GHz was developed and fabricated in a standard bipolar technology. The circuit operates on the principle of `regenerative frequency division?. Compared to the most popular divider concepts based on a master-slave D-flip-flop, an almost twice as high input frequency can be divided, provided that the same technology is used. A further advantage is the low power consumption.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.