Global Asymptotical Synchronization of Chaotic Lur'e Systems Using Sampled Data: A Linear Matrix Inequality Approach

Sampled-data feedback control for master-slave synchronization schemes that consist of identical chaotic Lur'e systems is studied. Sufficient conditions for global asymptotic synchronization of such chaotic Lur'e systems are obtained using the free-weighting matrix approach and expressed in terms of linear matrix inequalities (LMIs). With the help of the LMI solvers, the sampled-data feedback control law can easily be obtained to globally asymptotically synchronize Lur'e chaotic systems. The effectiveness of the proposed method is finally illustrated via numerical simulations of chaotic Chua's circuits.     

Inverted Solution Processable OLEDs Using a Metal Oxide as an Electron Injection Contact.

A new type of bottom‐emission electroluminescent device is described in which a metal oxide is used as the electron‐injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light‐emitting layer and subsequently the deposition of a high‐workfunction (air‐stable) metal anode. This architecture allows for a low‐cost electroluminescent device because no rigorous encapsulation is required. Electroluminescence with a high brightness reaching 5700 cd m^–2 is observed at voltages as low as 8 V, demonstrating the potential of this new approach to organic light‐emitting diode (OLED) devices. Unfortunately the device efficiency is rather low because of the high current density flowing through the device. We show that the device only operates after the insertion of an additional hole‐injection layer in between the light‐emitting polymer (LEP) and the metal anode. A simple model that explains the experimental results and provides avenues for further optimization of these devices is described. It is based on the idea that the barrier for electron injection is lowered by the formation of a space–charge field over the metal‐oxide–LEP interface due to the build up of holes in the LEP layer close to this interface.     

Lein?l, Lein?lfirniss und Oelfarben

Ohne Zusammenfassung     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.     

Study of the dissolution and growth of salt single crystals in inhomogeneous acoustic fields: I. A standing acoustic wave

The growth of the isolated (100) face of a KDP crystal at exposure of the phase boundary to the initial ultrasound field and a standing acoustic wave has been investigated. A significant growth response of this face, exposed to sound normally along the acoustic axis in the near zone of a piston-like half-wave vibrator with f = 20 kHz and tangentially in the pulsed two-frequency (f = 600 and 900 kHz) standing-wave mode, has been revealed. It is shown that the mechanisms of mass exchange enhancement in these acoustic modes are different. The results obtained show a fundamental possibility of controlling crystal growth and dissolution by varying the parameters of inhomogeneous acoustic field.     

Doping of KDP single crystals with cerium: Growth and optical properties

The features of doping of KDP crystals with cerium ions and organocerium complexes with alizarin complexon and arsenazo III have been investigated. It is established that “direct” doping by introducing cerium salts into the initial solution cannot be implemented. The effect of organometallic complexes of cerium on the crystal growth has been studied. Organocerium complexes predominantly enter the prismatic or pyramidal growth sectors. It is shown that the complex arsenazo III + Ce blocks the growth of the prismatic sector. Cerium-doped KDP crystals exhibit a photoluminescence band peaking at the wavelength λ_max= 350 nm.     

An analysis of migration paths of Li+ cations in ternary oxygen-containing compounds Li p X q O r

A new method was developed for studying voids and channels in crystal structures based on the Voronoi-Dirichlet partition of crystal space, and 822 structurally characterized ternary compounds Li ^p X ^q O ^r were analyzed for the first time. For these compounds, the dimensionality was determined and the migration patterns of channel systems capable of providing lithium-ion transport were constructed. The calculated coordinates of lithium atoms in the centers of the voids are consistent (within 0.4 ?) with the known structural data. Among these compounds, 113 compounds have infinite channel systems, 60 compounds (18 structural types, STs) have been described earlier in the literature as solid electrolytes, and 53 compounds (23 STs) can be considered as potential one-, two-, or three-dimensional ionic conductors (13, 3, and 7 STs, respectively). Original Russian Text ? N.A. Anurova, V.A. Blatov, G.D. Ilyushin, O.A. Blatova, A.K. Ivanov-Shitz, L.N. Dem’yanets, 2008, published in Kristallografiya, 2008, Vol. 53, No. 6, pp. 987–993.     

The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation

Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed.     

Effect of oxygen deficit and nonuniform distribution of technological impurities on the dielectric properties of Y3Fe5O12 crystals

The experimental and calculated values of the optical permittivity ε_∞ have been analyzed and generalized with allowance for the oxygen concentration and possible valences of Fe and O ions in YIG single crystals. It is shown that the deficit of oxygen ions in the samples is accompanied by a decrease in ε_∞. A decrease in the gradient of distribution of Ba ions over the sample thickness decreases the difference between the calculated and experimental values. It is revealed that the ratio of the number of valence electrons to the number of core electrons, with regard to their polarizabilities, is proportional to the ratio of the incoherent and coherent X-ray scattering intensities, nk/k.