Convex Hamiltonian energy surfaces and their periodic trajectories

In this paper we introduce symplectic invariants for convex Hamiltonian energy surfaces and their periodic trajectories and show that these quentities satisfy several nontrivial relations. In particular we show that they can be used to prove multiplicity results for the number of periodic trajectories.This paper represents results obtained while holding a visiting position at the Courant Institute for Mathematical Sciences, New YorkResearch partially supported by NSF Grant No. DMS-8603149 and a Rutgers University Research Council Grant     

Untersuchungen zur Wechselwirkung von gasf?rmigem molekularem Iod mit Silberoberfl?chen mittels XPS und AES

Summary The adsorption of gaseous molecular iodine on clean silver surfaces proceeds in the first stage by dissociative chemisorption. After the formation of half a monolayer of chemisorbed iodine atoms the formation of silver iodide begins, which forms a very regular overlayer on top of the substrate. Both iodine species can be distinguished due to a difference in chemical shift of the M₄N₄, ₅N₄, ₅-Auger transitions. After completion of this overlayer further iodine uptake is slowed down significantly. Above an overlayer thickness of about 10 nm a further progress of the reaction cannot be followed anymore due to the limited information depth of XPS.     

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Design and fabrication of lateral SiC reduced surface field (RESURF) MOSFETs have been investigated. The doping concentration (dose) of the RESURF and lightly doped drain regions has been optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. The optimum oxidation condition depends on the polytype: N/sub 2/O oxidation at 1300/spl deg/C seems to be suitable for 4H-SiC, and dry O/sub 2/ oxidation at 1250/spl deg/C for 6H-SiC. The average inversion-channel mobility is 22, 78, and 68 cm/sup 2//Vs for 4H-SiC(0001), (112~0), and 6H-SiC(0001) MOSFETs, respectively. RESURF MOSFETs have been fabricated on 10-/spl mu/m-thick p-type 4H-SiC(0001), (112~0), and 6H-SiC(0001) epilayers with an acceptor concentration of 1/spl times/10/sup 16/ cm/sup -3/. A 6H-SiC(0001) RESURF MOSFET with a 3-/spl mu/m channel length exhibits a high breakdown voltage of 1620 V and an on-resistance of 234 m/spl Omega//spl middot/cm/sup 2/. A 4H-SiC(112~0) RESURF MOSFET shows the characteristics of 1230 V-138 m/spl Omega//spl middot/cm/sup 2/.     

From biological inspiration toward next-generation manipulators: manipulator control focused on human tasks

This paper presents our approach to extend the niche of behavior-based robotics toward manipulation. We use results from neuroscience to derive some qualitative design rules for the mechanics of the manipulator, resulting in a next-generation manipulator, the "soft arm". By defining the basic behaviors of the manipulator as trajectory-producing behaviors (which is also biologically plausible), we have designed a first test case: writing on a board with a mobile manipulator. The soft arm has not yet been developed; therefore, we have emulated such a soft robot arm on an industrial robot.     

Experiments with small V-band waveguide reflector feeds

The radiation patterns of simple rectangular waveguide feeds have been measured at V band. A low-cost test arrangement, operating in the far field but without any absorbers, is shown to give better than 0.5 dB repeatability and more than 30 dB of dynamic range. The general rules of waveguide-feed design for reflector antennas are applicable, but the tendency of narrow feed patterns is somewhat emphasized compared to observations in earlier work at C or X band. For horizontal polarization, the difference is 5 dB at 90/spl deg/ between WR-28 and WR-90 hardware. This is partly caused by an increase in the relative guide material thickness at shorter wavelengths. No clear connection between pattern widths of the two linear polarizations was observed if the guide height was increased, the largest momentary deviation being 3 dB for a rectangular 7.1 by 7.1 millimeter feed. Changes in the guide width had a monotone effect up to 3 dB at 90/spl deg/ offset. Very small feed aperture sizes, around /spl lambda//4 or less, did not show respective widening of 1 dB patterns, although such expected effects were visible at lower amplitude levels.     

Linear demosaicing inspired by the human visual system.

There is an analogy between single-chip color cameras and the human visual system in that these two systems acquire only one limited wavelength sensitivity band per spatial location. We have exploited this analogy, defining a model that characterizes a one-color per spatial position image as a coding into luminance and chrominance of the corresponding three colors per spatial position image. Luminance is defined with full spatial resolution while chrominance contains subsampled opponent colors. Moreover, luminance and chrominance follow a particular arrangement in the Fourier domain, allowing for demosaicing by spatial frequency filtering. This model shows that visual artifacts after demosaicing are due to aliasing between luminance and chrominance and could be solved using a preprocessing filter. This approach also gives new insights for the representation of single-color per spatial location images and enables formal and controllable procedures to design demosaicing algorithms that perform well compared to concurrent approaches, as demonstrated by experiments.     

Explicit constructions of algebraic-geometric codes

We propose a simple construction of algebraic-geometric codes which are subcodes of Goppa codes and which coincide with Goppa codes in many cases. The codes we construct have the advantage that for an explicitly given extension of the rational function field, one can easily obtain explicit bases and therefore an exact formula for the dimension. Furthermore, we show that in many cases good upper and lower bounds for the minimum distance can be obtained     

Frequency notched printed slot antenna with parasitic open-circuit stub

A new frequency notched ultra-wideband microstrip slot antenna with a parasitic tuning stub is proposed. The antenna is similar in configuration to a conventional microstrip slot antenna; by introducing a parasitic open-circuit tuning stub, flexible frequency notched function is achieved. Several properties of the antenna, such as frequency notched function, antenna transfer function and gain, have been investigated. As is reported, the operation bandwidth of the antenna is 2.91-11.16 GHz, in which a frequency notched band of 5.10-5.85 GHz has been achieved. Furthermore, good ultra-wideband linear transmission performance over the entire operation frequency range has also been achieved.     

Wideband and compact folded loop antenna

A simple and successful design method that yields a wideband and compact antenna without a ground plane is proposed. The antenna, referred to as the folded loop antenna, can, with the right parameters, achieve wideband characteristics. Calculated and measured results agree well and more than 50% bandwidth (return loss /spl les/-10 dB) is obtained.     

W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.