Structural and Superconducting Property Variations with Nominal Mg Non‐Stoichiometry in MgxB2 and Its Enhancement of Upper Critical Field

By applying a combination of characterisation tools, changes in structural and superconducting properties with nominal Mg non‐stoichiometry in Mg_xB₂ are found. The non‐stoichiometry produces enhanced in‐field critical current densities (J_c's) and upper critical field / irreversibility field (H_c2/H_irr(T)) values. Upper critical fields of ～ 21 T (4.2 K) were obtained in nominal Mg‐deficient samples compared to ～ 17 T (4.2 K) for near‐stoichiometric samples.     

Inverted Solution Processable OLEDs Using a Metal Oxide as an Electron Injection Contact.

A new type of bottom‐emission electroluminescent device is described in which a metal oxide is used as the electron‐injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light‐emitting layer and subsequently the deposition of a high‐workfunction (air‐stable) metal anode. This architecture allows for a low‐cost electroluminescent device because no rigorous encapsulation is required. Electroluminescence with a high brightness reaching 5700 cd m^–2 is observed at voltages as low as 8 V, demonstrating the potential of this new approach to organic light‐emitting diode (OLED) devices. Unfortunately the device efficiency is rather low because of the high current density flowing through the device. We show that the device only operates after the insertion of an additional hole‐injection layer in between the light‐emitting polymer (LEP) and the metal anode. A simple model that explains the experimental results and provides avenues for further optimization of these devices is described. It is based on the idea that the barrier for electron injection is lowered by the formation of a space–charge field over the metal‐oxide–LEP interface due to the build up of holes in the LEP layer close to this interface.     

Lein?l, Lein?lfirniss und Oelfarben

Ohne Zusammenfassung     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.     

The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation

Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed.     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Banana-shaped mesogens: a new homologous series of compounds exhibiting the B7 mesophase

The synthesis and characterization of a new homologous series of compounds, the 2-cyano-1,3-phenylene bis[4-(4-n-alkoxyphenyliminomethyl)benzoates] derived from 2-cyanoresorcinol is reported. All the compounds are enantiotropic mesogens and exhibit the fascinating B₇ mesophase. The characterization of the mesophase was performed using polarizing optical microscopy, differential scanning calorimetry, X-ray diffraction and electro-optical studies.     

10?30 GHz monolithic GaAs travelling-wave divider/combiner

A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.     

Parametric modeling of somatosensory evoked potentials

In this paper, we examine methods of characterizing somatosensory evoked potentials (SEP's) in both the time and frequency domains. We have found that the truncated impulse response (TIR) method produced an accurate time domain model of the SEP signals at model orders greatly reduced from the original state space matrix. The TIR method was valuable for smoothing signals that were slightly corrupted by noise. In this case, the simulated data sequence was close to the original data sequence in the mean squared error sense. For signals that were greatly corrupted by noise, the TIR method was not able to perform as well. Therefore, the TIR method was not a feature extraction method but was valuable for data simulation. In the frequency domain, we have used the autoregressive moving average model (ARMA) to parameterize the SEP signal. An overdetermined set of Yule-Walker equations was created to determine the autoregressive (AR) parameters of the original data with the model order established by the singular value decomposition. From these AR parameters, a residual time series was generated which was used to find the moving average parameters. The resulting ARMA model was used to produce a simulated data sequence. The frequency domain characteristics of the simulated sequence and the corresponding power spectral density of the ARMA filter were very close to the periodogram of the original data sequence. Accurate parameterization was achieved for the SEP waveforms at low filter lengths.