Zur Bestimmung des St?rkegehaltes in der Gerste und in anderen Getreidearten

Ohne Zusammenfassung     

Lifetime Measurements on a High-Reliability RF-MEMS Contact Switch

Radio frequency microelectromechanical systems (RF MEMS) cantilever contact switches have been tested for lifetime. The mean cycles-to-failure measured on an ensemble of switches was 430 billion switch cycles. The longest lifetime exhibited without degradation of the switch was 914 billion switch cycles. The devices were switched at 20 kHz with an incident RF frequency of 10 GHz and an incident RF power of 20 dBm. Testing was performed continuously over a period of approximately 18 months. The switches were operated in a cold-switched mode.     

ηi-Mode Related Properties of Collisionless Anisotropic Plasmas

An extended eigenvalue problem for collisionless electrostatic driftwaves in cylindrical and slab geometry is discussed and solved in local approximation. The fact of a minimum threshold for the ITG instability (η_i-mode) is used to get a unique concept for profile determination.     

Reduction of the off-state current of polysilicon thin-filmtransistors by means of a polysilicon buffer layer

The off state current for polysilicon thin-film transistors for pixels in LCDs has been successfully reduced by introducing a polysilicon buffer layer between a polysilicon active layer fabricated by solid-phase-crystallisation (SPC) and a fused quartz substrate. Off-slate current of less than 1 pA under V_gs=-25 V at V_ds=3 V was obtained for n-channel single-gate coplanar transistors using the buffer layer (400 Å)     

Carrier wave frequency multiplication of AM signals

Until now carrier wave frequency multiplication has been applied in CW, PM and FM techniques. However, it has never been considered as applicable to AM signals. This is due to unsupported opinions that it would distort the envelope of AM signals. Theoretical considerations were carried out with the use of the double Fourier series expansion. The results have shown that it is enough to have an uninterrupted flow of the envelope through the amplifier to have a nondistorted envelope in both amplification and frequency multiplication. The results were verified experimentally and by observations of BC and TV stations at their harmonic frequencies. The conclusion has been made on AM signals having two or more frequency fringes, e.g.: single tone DSB, two tone SSB     

Derivative constrained optimum broad-band antenna arrays

The optimization problem corresponding to the design of a presteered broadband processor with maximally flat second-order spatial response in the look direction is discussed. The constraints corresponding to necessary and sufficient conditions for second-order flatness are presented. The nonlinearly constrained optimization approach is unable to consistently locate the global minimum. An approach to solving this problem that essentially converts the nonconvex optimization problem into a parameterized set of convex problems is presented. In the case of 2-D scenarios, the global optimum is determined by finding the roots of a cubic function. The characteristics of the constraints, including the minimum number required and the dependence on the choice of coordinate systems, are examined     

Design and characterization of a mode-splitting Ψ-junction

It will he shown In this paper, that the mode conversion factor (MCF) as defined for Y-junctions, can be profitably applied for the design of three branch junctions for splitting the three lowest-order modes of a channel waveguide. Accordingly, these so-called mode-splitting Ψ-junctions were designed for implementation in PECVD SiON-technology. Propagation calculations point to crosstalk levels well below -20 dB at 10-20 mm junction length. The produced Ψ-junctions show crosstalk of less than -17 dB, mainly originating from the nonhomogeneity of the refractive indexes of the SiON layers     

The blocking barrier effect on aluminum electromigration due totitanium layers in multilayered interconnects of LSI's

Experimental evidence of an increase in the resistance of a cathode-side metal line without any void generation is presented for a multilayered metal structure terminated by via-holes during electromigration tests. This resistance increase is reversed to the initial value by high temperature storage after electromigration testing. The increase in the resistance of multilayered metal structures is attributed to the vacancy accumulation in the cathode side due to the blocking barrier effect of the refractory metal layer in the via-hole