Measurement and modeling of the sidewall threshold voltage ofmesa-isolated SOI MOSFETs

Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage     

The Influence of Variable Convective Velocities on Longitudinal Diffusion

Solutions are presented for the impulsively started uniformstream and simple shear flows past a point source of momentum,which can be interpreted to describe the position and the widthof the front which transmits the knowledge of the singularitythrough a slightly viscous fluid. These understandings are thengeneralized to show that the front always moves with velocityslower than that of a (strictly monotonic) convective velocity,and also that its width always grows faster than with simplediffusion. Finally, a remarkably simple, exact expression is given forvorticity due to a simple shear flow past a point vortex.     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

Octave-tunable miniature RF resonators

The development and testing of a miniaturized, high-Q, broadly tunable resonator is described. An exemplary device, with a center frequency that is continuously tunable from 1.2 to 2.6GHz, was tested in detail. Experimental results demonstrated a resonator Q of up to 380, and typical insertion loss of -1.9dB for a 25MHz 3-dB bandwidth. These resonators have been used to stabilize a broadly-tunable oscillator with phase noise of -132dBc/Hz at 100-kHz offset, with a center frequency tunable from 1.2-2.6GHz, and a tuning speed of 1GHz/ms.     

A time-based energy-efficient analog-to-digital converter

Dual-slope converters use time to perform analog-to-digital conversion but require 2/sup N+1/ clock cycles to achieve N bits of precision. We describe a novel current-mode algorithm that also uses time to perform analog-to-digital conversion but requires 5N clock cycles to achieve N bits of precision via a successive subranging technique. The algorithm requires one asynchronous comparator, two capacitors, one current source, and a state machine. Amplification of two is achieved without the use of an explicit amplifier by simply doing things twice in time. The use of alternating voltage-to-time and time-to-voltage conversions provides natural error cancellation of comparator offset and delay, 1/f noise, and switching charge-injection. The use of few components and an efficient mechanism for amplification and error cancellation allow for energy-efficient operation: in a 0.35-/spl mu/m implementation, we were able to achieve 12 bit of DNL limited precision or 11 bit of thermal noise-limited precision at a sampling frequency of 31.25 kHz with 75 /spl mu/W of total analog and digital power consumption. These numbers yield a thermal noise-limited energy efficiency of 1.17 pJ per quantization level, making it one of the most energy-efficient converters to date in the 10-12 bit precision range.     

Grid Computing: A Critical Discussion on Business Applicability

In the last decade, the Grid emerged from computing-intensive application domains. It has become very difficult to distinguish between "real" Grids, Web services, and simply a distributed computing environment. A critical discussion of Grid technologies points out the pros and cons of applying current Grid technologies in a business or enterprise environment.     

Pressure effects in a plastic columnar discotic triphenylene

The effect of hydrostatic pressure on the structure of a plastic columnar discotic triphenylene has been investigated. The goal was to determine whether pressure can be used to modify electronic properties via changes in structural properties of columnar discotics to any significant extent. The findings are that (i) the intra- and inter-columnar distances are reduced in a nearly isotropic fashion, (ii) that the crystal sizes are reduced and (iii) that a transition takes place from a more highly ordered plastic columnar to a less ordered hexagonal columnar state with increasing pressure. The induced decrease of the molecular distances, amounting to 6% for pressures up to 17 kbar, are clearly too small to induce an appreciable modification of the electronic structure and thus opto-electronic properties.     

Dual-Mode Microstrip Open-Loop Resonators and Filters

A miniature dual-mode microstrip open-loop resonator is proposed. Distinct characteristics of this new type of dual-mode resonator are investigated using full-wave electromagnetic simulations. It is shown that the two operating modes, i.e., the even and odd modes, within a single dual-mode resonator of this type do not couple. It is also found that there is a finite-frequency transmission zero inherently associated with the even mode. Two two-pole filters using this type of dual-mode resonator are demonstrated with opposite asymmetric responses, which result from different locations of the transmission zero. Higher order filters of this type are also investigated. Both simulated and measured results are presented.     

Control of a liquid–liquid heat exchanger

 The analytical solutions of equations describing the dynamics of distributed parameter systems are usually complicated in form and derivations and inconvenient to use for simulation and control system design. The liquid–liquid counter flow heat exchanger is an example of these disturbed parameter systems. An analytical solution of the dynamics of a symmetrically operated counter flow heat exchanger in the form of transfer function matrix is investigated in open-loop and close-loop conditions. The resulting non-linear model was linearized using perturbation approach. A feed-forward path controller to counteract at any disturbances in the boundary temperature and a non-interactive controller to decouple the outputs were implemented. Received on 22 February 2001 / Published online: 29 November 2001     

Fiber-optic devices for local area network application

Recent developments on fiber-optic devices are reviewed from the local area network (LAN) application viewpoint. Future technical trends are also discussed, along with current research activities. In local area network systems, low device cost and easy maintenance or maintenance-free devices are especially required. Light sources and photodetectors suitable for the systems are described. InGaAsP/InP light emitting diodes can cover a broad application field, up to a gigabits per second super high-speed network region. Optical passive devices, which include branching couplers, switches and connectors, are mentioned as essential components. Compact transmitter/receiver module technology is a key factor in realizing optical-fiber local area network systems. An example of 200-Mbit/s transmitter/receiver module is reported.