Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique

A plasma-doping technique for fabricating nanoscale silicon-on-insulator (SOI) MOSFETs has been investigated. The source/drain (S/D) extensions of the tri-gate structure SOI n-MOSFETs were formed by using an elevated temperature plasma-doping method. Even though the activation annealing after plasma doping was excluded to minimize the diffusion of dopants, which resulted in a laterally abrupt S/D junction, we obtained a low sheet resistance of 920 /spl Omega///spl square/ by the elevated temperature plasma doping of 527 /spl deg/C. A tri-gate structure silicon-on-insulator n-MOSFET with a gate length of 50 nm was successfully fabricated and revealed suppressed short-channel effects.     

Simultaneous disparity estimation and object segmentation using stochastic models

Stochastic models are proposed for simultaneous disparity estimation and object segmentation in the stereo images. The disparity and segment fields are explicitly modelled as Markov random fields, and are estimated in the energy minimisation process called stochastic diffusion. Some experiments show good segmentation results of foreground objects.     

Asymmetric borane reduction of achiral ketones mediated by a chiral oxazaborolidine derived from (−)-ephedrine

Asymmetric borane reduction of achiral ketones in the presence of a chiral oxazaborolidine derived from (−)-ephedrine yielded the corresponding alcohols in optical yields of 41 – 83 % ee.     

ZnSe heteroepitaxy on GaAs (110) substrate

ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pre-growth treatments exhibit large interface disorder in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions. The use of (110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates of 10⁷/cm², 3 × 10⁵/cm² and 5 × 10⁴/cm², respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be possible to fabricate defect free ZnSe based laser devices.     

Improved blind image restoration scheme using recurrent filtering

In the paper, the idea of space-adaptive regularisation is introduced into the nonnegativity and support constraints recursive inverse filtering (NAS-RIF) algorithm for blind image restoration. A newly developed cost function is obtained by adding a space-adaptive regularisation term to the cost function of the NAS-RIF algorithm to prevent noise amplification and to reduce ringing artifacts. Compared to the original NAS-RIF algorithm, the improved NAS-RIF algorithm is particularly effective under low SNR conditions. Also, the experimental results show that the convergence characteristic of the improved NAS-RIF algorithm is much more stable and the converged solution is capable of providing an excellent estimate of the original image     

A transconductance spectroscopy approach to device level surfacestate characterization

A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by M. Ozeki et al. (1982) and the temperature dependence of transconductance dispersion observed by S.R. Blight et al. (1986)     

Characterization and Wideband Modeling of Miniaturized LTCC Helical Inductors

We report fabrication of miniaturized low temperature co-fired ceramic helical (3-D) inductors with more than seven layers of helices and the conductor linewidth of 100mum. We achieve the Q_maxLeff/A product ranging from 200 to 370. Such high values are possible thanks to the drastic reduction of the active area and still acceptably large Q_max and self-resonant frequency. High frequency characterization of the inductors is performed up to 12GHz, and a new equivalent circuit model considering vertical electromagnetic coupling between conductors is shown to reproduce all the measured characteristics