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31.
Beomjoon Kim Dongmin Kim Jaiyong Lee 《Communications Letters, IEEE》2004,8(9):600-602
There have been a lot of works to avoid retransmission timeout (RTO) of transmission control protocol (TCP) that takes place in an unnecessary situation. However, most current TCP implementations, even if selective acknowledgment (SACK) option is used, do not have a mechanism to detect a lost retransmission and avoid subsequent RTO. In this letter, we propose a simple modification that enables a TCP sender using SACK option to detect a lost retransmission, which is called TCP SACK+ in simple. We use a stochastic model to evaluate the performance of TCP SACK+. Numerical results evaluated by simulations show that TCP SACK+ improves the loss recovery of TCP SACK significantly in presence of random losses. 相似文献
32.
镍层耐硝酸腐蚀性测试——一种简单的预先探测ENIG镍层“黑盘”现象的测试方法 总被引:1,自引:1,他引:0
随着更加精细的SMT、BGA等表面贴装技术的运用,化学沉镍金(ENIG)作为线路板最终表面处理得到了越来越广泛的应用,同时可怕的“黑盘”现象也随之更广泛地“流行”起来,直接导致贴装后元器件焊接点不规则接触不良。为了贯彻执行最好的流程控制和采取有效的预防措施,了解这种焊接失败的产生机理是非常重要的,及早的观测到可能发生“黑盘”现象的迹象变得同样关键。本文介绍了一种简单的预先探测ENIG镍层“黑盘”现象的测试方法-镍层耐硝酸腐蚀性测试,这种测试可以用于作为一种常规的测试方法监测一般化学沉镍溶液在有效使用寿命范围内新鲜沉积的镍层的质量。利用Weibull概率统计分析在不同的金属置换周期(MTO)下镍层的可靠性能表现。结合试验结果得出了一个镍层耐硝酸腐蚀性的判定标准。 相似文献
33.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
34.
As packet cellular networks are expected to support multimedia services, the authors incorporate the multimedia QoS requirements into the design of a new scheduling algorithm. The proposed wireless-adaptive fair scheduling tries to allocate time slots for each user with fair share by considering the varying channel condition while reflecting the stream requirements and achieving high throughput. 相似文献
35.
Baeyens Y. Georgiou G. Weiner J.S. Leven A. Houtsma V. Paschke P. Lee Q. Kopf R.F. Yang Yang Chua L. Chen C. Liu C.T. Young-Kai Chen 《Solid-State Circuits, IEEE Journal of》2002,37(9):1152-1159
The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product. 相似文献
36.
K. P. Lee S. J. Pearton M. E. Overberg C. R. Abernathy R. G. Wilson S. N. G. Chu N. Theodoropolou A. F. Hebard J. M. Zavada 《Journal of Electronic Materials》2002,31(5):411-415
In p-GaN implanted with Mn (3×1016 cm−2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron
microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing
showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In
these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation
are similar to those reported for Fe doping during epitaxial growth of GaN. 相似文献
37.
Chel-Jong Choi Tae-Yeon Seong Key-Min Lee Joo-Hyoung Lee Young-Jin Park Hi-Deok Lee 《Electron Device Letters, IEEE》2002,23(4):188-190
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions 相似文献
38.
Ki Yong Lee Souhwan Jung 《Electronics letters》1998,34(16):1567-1568
The authors investigate the problem of nonlinear adaptive equalisation in the presence of intersymbol interference, additive white Gaussian noise and co-channel interference. An extended radial basis function (RBF) network is proposed, in which regression weights are used in the output layer and the hidden unit is defined to have the Gaussian formula with the Mahalanobis distance. It is shown by simulation that the proposed structure gives reduced computational complexity without performance degradation, compared to that of the conventional RBF equaliser 相似文献
39.
Robust backward adaptive formant prediction for speech coder 总被引:1,自引:0,他引:1
To improve the error performance of speech coders, an adaptation method for the backward adapted formant predictor is proposed. The filtered residual signal is used instead of the reconstructed output signal as the input to an adaptation of the formant predictor. The performance of the filtered-residual driven adaption method in the noise free channel is as good as that of conventional output driven adaptation. Moreover, the new adaptation method maintains the same robustness to channel errors as residual driven adaptation 相似文献
40.
Uhm H.S. Lee P.H. Kim Y.I. Kim J.H. Chang H.Y. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》1995,23(4):628-635
A theory is developed for the density profile of low temperature plasmas confined by applied magnetic field and an experiment of the electron-cyclotron-resonance (ECR) plasma is conducted to compare the theoretical prediction and experimental measurements. Due to a large electron mobility along the magnetic field, electrons move quickly out of the system, leaving ions behind and building a space charge potential, which leads to the ambipolar diffusion of ions. In a steady-state condition, the plasma generation by ionization of neutral molecules is in balance with plasma loss due to the diffusion, leading to the electron temperature equation, which is expressed in terms of the plasma size, chamber pressure, and the ionization energy and cross section of neutrals. The power balance condition leads to the plasma density equation, which is also expressed in terms of the electron temperature, the input microwave power and the chamber pressure. It is shown that the plasma density increases, reaches its peak and decreases, as the chamber pressure increases from a small value (0.1 mTorr). These simple expressions of electron temperature and density provide a scaling law of ECR plasma in terms of system parameters. After carrying out an experimental observation, it is concluded that the theoretical predictions of the electron temperature and plasma density agree remarkably well with experimental data 相似文献