GaAs亚微米自对准工艺技术研究

总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。     

A microwave Gaussian-beam launcher with an active aperture-blockageto control the spot-size of the beam

A method of controlling the spot-size of a focused microwave Gaussian-beam using an active aperture-blockage is described. The Gaussian-beam launcher consists of an open-ended scalar-horn with a dielectric hyperhemisphere at its aperture. Also included is an AgI-pellet at the aperture-center with a provision to heat it with an external dc source. The scalar-horn plus the dielectric lens launch a Gaussian-beam; and, the AgI pellet when heated, becomes a superionic conductor offering an aperture-blockage. This results in a variation of the spot-size of the emergent-beam. Theoretical results and experimental data are furnished and compared     

A circuit model for the class E resonant DC-DC converter regulatedat a fixed switching frequency

An averaging circuit model is developed for the class E resonant DC-DC converter regulated at a fixed switching frequency. The regulation is achieved by use of an auxiliary switch. The model is obtained based on the circuit analysis using the Fourier series expansion. Steady-state and small-signal dynamic analysis is presented, which reveals that the DC output is well controlled by the control angle of the auxiliary switch and that there exists a right-half-plane zero in the control-to-output transfer function. The analysis results are verified by the experiments     

Super-Wavelets and Decomposable Wavelet Frames

A wavelet frame is called decomposable whenever it is equivalent to a superwavelet frame of length greater than one. Decomposable wavelet frames are closely related to some problems on super-wavelets. In this article we first obtain some necessary or sufficient conditions for decomposable Parseval wavelet frames. As an application of these conditions, we prove that for each n > 1 there exists a Parseval wavelet frame which is m-decomposable for any 1 < m ≤ n, but not k-decomposable for any k > n. Moreover, there exists a super-wavelet whose components are non-decomposable. Similarly we also prove that for each n > 1, there exists a Parseval wavelet frame that can be extended to a super-wavelet of length m for any 1 < m ≤ n, but can not be extended to any super-wavelet of length k with k > n. The connection between decomposable Parseval wavelet frames and super-wavelets is investigated, and some necessary or sufficient conditions for extendable Parseval wavelet frames are given.     

Specular reflectance of cold-rolled aluminum surfaces

The specular reflectance of cold-rolled aluminum surface is studied using a fiber optic system. An approximation for the determination of surface roughness is presented.     

Melt rheology of polylactide/montmorillonite nanocomposites

In this article, the linear and nonlinear shear rheological behaviors of polylactide (PLA)/clay (organophilic‐montmorillonite) nanocomposites (PLACNs) were investigated by an Advanced Rheology Expanded System rheometer. The nanocomposites were prepared by master batch method using a twin‐screw extruder with poly(ε‐caprolactone) (PCL) as a compatibilizer. The presence of org‐MMT leads to obvious pseudo‐solid‐like behaviors of nanocomposite melts. The behaviors caused by the formation of a “percolating network” derived from the reciprocity among the strong related sheet particles. Therefore, the storage moduli, loss moduli, and dynamic viscosities of PLACNs show a monotonic increase with MMT content. Nonterminal behaviors exists in PLACNs nanocomposites. Besides the PLACNs melts show a greater shear thinning tendency than pure PLA melt because of the preferential orientation of the MMT layers. Therefore, PLACNs have higher moduli but better processibility compared with pure PLA. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 3189–3196, 2007     

Thickness dependence of free‐standing thin films

Below a critical thickness, of about 60 nm, the glass transition temperature of polystyrene (PS) films decreases with film thickness, as demonstrated using free‐standing films. A geometrical model is developed here describing this phenomenon in the case of ideal (Gaussian) chains. This model, which can be considered as an application of the free volume model, assumes that the decrease of the glass transition temperature from thick to ultrathin films is due to the modification of the interpenetration between neighboring chains. The theoretical curve deduced from the model is in excellent agreement with the PS experimental results, without using any adjustable parameters. From these results, it can be concluded that new chain motions, usually buried in bulk samples, are expressed by the presence of the surface. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 10–17, 2007     

A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium

The composition and size of optically active Cd_xZn_1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for Cd_xZn_1−xSe/Zn_0.97Be_0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots.     

Investigation of charge effects on poling and stability for corona-poled polymer films

The optimal corona-poling temperature of polymer films was accurately determined by measuring the temperature dependence of the in situ second-harmonic (SH) intensity profile under the applied poling electric field. The in situ SH intensity profile was first measured by probing both the surface voltages and the poling currents induced by surface/space charges for the corona-poled polymer films. Moreover, charge effects on the stability of the chromophore orientation were first studied by using the thermally stimulated discharge-current technique. PACS 72.20.Jv; 42.65.Ky; 73.61.Ph; 81.40.Tv