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61.
We have performed a detailed study of dark current versus voltage to understand existing limitations in dark current and address the nonuniformity of dark current in devices fabricated on HgCdTe grown on silicon substrates. One interesting observation is that trap-assisted tunneling, g-r currents, are not found close to zero bias in certain devices. Devices from the low end of the R 0 A distribution show heavy shunting paths close to zero bias. We believe that these shunting paths may be the limiting cause of tail distributions in fabricated focal plane array tail distributions. Possible causes for these shunting paths are surface charges associated with dislocation cores and impurity gettering at dislocation cores. The measured non-anti-reflection (AR)-coated quantum efficiency (QE) was 0.576 at 78 K and displays the classical response versus wavelength. The measured QE on isolated single devices is consistent with the 256 × 256 focal-plane array mean QE. Obtained average dark currents are on the order of mid 10−5 A cm–2, which is one order of magnitude higher than dark currents obtained from arrays on lattice-matched substrates. On average, arrays on lattice-mismatched substrates show performance characteristics inferior to those of arrays fabricated on lattice-matched substrates. This inferior performance is due to array pixel operability, as can be seen from the tail of the distribution and the average dark currents, which are one order of magnitude higher than those obtained on lattice-matched substrates.  相似文献   
62.
We establish a framework for assessing whether the transition state location of a biopolymer, which can be inferred from single molecule pulling experiments, corresponds to the ensemble of structures that have equal probability of reaching either the folded or unfolded states (P(fold)=0.5). Using results for the forced unfolding of a RNA hairpin, an exactly soluble model, and an analytic theory, we show that P(fold) is solely determined by s, an experimentally measurable molecular tensegrity parameter, which is a ratio of the tensile force and a compaction force that stabilizes the folded state. Applications to folding landscapes of DNA hairpins and a leucine zipper with two barriers provide a structural interpretation of single molecule experimental data. Our theory can be used to assess whether molecular extension is a good reaction coordinate using measured free energy profiles.  相似文献   
63.
The derivative of self-intersection local time (DSLT) for Brownian motion was introduced by Rosen (2005) and subsequently used by others to study the L2L2 and L3L3 moduli of continuity of Brownian local time. A version of the DSLT for fractional Brownian motion (fBm) was introduced in Yan et al. (2008); however, the definition given there presents difficulties, since it is motivated by an incorrect application of the fractional Itô formula. To rectify this, we introduce a modified DSLT for fBm and prove existence using an explicit Wiener chaos expansion. We will then argue that our modification is the natural version of the DSLT by rigorously proving the corresponding Tanaka formula. This formula corrects a formal identity given in both Rosen (2005) and Yan et al. (2008). In the course of this endeavor we prove a Fubini theorem for integrals with respect to fBm. The Fubini theorem may be of independent interest, as it generalizes (to Hida distributions) similar results previously seen in the literature. As a further byproduct of our investigation, we also provide a small correction to an important technical second-moment bound for fBm which has appeared in the literature many times.  相似文献   
64.
A fundamental result of free probability theory due to Voiculescu and subsequently refined by many authors states that conjugation by independent Haar-distributed random unitary matrices delivers asymptotic freeness. In this paper we exhibit many other systems of random unitary matrices that, when used for conjugation, lead to freeness. We do so by first proving a general result asserting “asymptotic liberation” under quite mild conditions, and then we explain how to specialize these general results in a striking way by exploiting Hadamard matrices. In particular, we recover and generalize results of the second-named author and of Tulino, Caire, Shamai and Verdú.  相似文献   
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66.
In this work we demonstrate the effects of a post processing high temperature anneal on the reliability of ultra-thin SiON layers fabricated into both nmos and pmos devices in terms of the initial gate leakage current, stress induced leakage current (SILC), and the time dependent dielectric breakdown behaviour. The devices under consideration were annealed at several temperatures up to 500 °C. We show that different mechanisms dominate the leakage behaviour at different temperatures by examining the relative leakage in the low voltage range. In particular for pmos devices, the emptying of electron traps induced by temperature and subsequent annealing of these traps alters the leakage current profiles significantly, dependent on anneal temperature. We show that annealing improves the time dependent dielectric breakdown (TDDB) lifetimes of nmos devices and examine the reasons for this.  相似文献   
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68.
We continue the study of the family of planar regions dubbed Aztec diamonds in our earlier article and study the ways in which these regions can be tiled by dominoes. Two more proofs of the main formula are given. The first uses the representation theory of GL(n). The second is more combinatorial and produces a generating function that gives not only the number of domino tilings of the Aztec diamond of order n but also information about the orientation of the dominoes (vertical versus horizontal) and the accessibility of one tiling from another by means of local modifications. Lastly, we explore a connection between the combinatorial objects studied in this paper and the square-ice model studied by Lieb.  相似文献   
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70.
Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz (93 microm or approximately 13 meV work function) is demonstrated by using a 1 x 10(18) cm(-3) Si-doped GaAs emitter and an undoped Al(0.04)Ga(0.96)As barrier structure. The peak responsivity of 6.5 A/W, detectivity of 5.5 x 10(8) Jones, and quantum efficiency of 19% were obtained at 7.1 THz under a bias field of 0.7 kV/cm at 6 K, while the detector spectral response range spans from 3.2 to 30 THz.  相似文献   
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