液相添加剂对PTCR陶瓷电性能的影响

液相添加剂ＡＳＴ（Ａｌ２Ｏ３＋ＳｉＯ２＋ＴｉＯ２）对ＢａＴｉＯ３陶瓷材料电性能的影响很大，随着Ａｌ２Ｏ３含量的增加，材料的电性能降低；ＳｉＯ２、ＴｉＯ２的物理特性对材料电性能影响较大；过量ＴｉＯ２对材料ＰＴＣ效应有重要影响，适当过量ＴｉＯ２含量，可得到性能优良的ＰＴＣＲ陶瓷。     

水溶性涂料使用性能研究

本文通过试验对水溶性涂料的耐盐雾腐蚀性能，耐热性能，高低温冲击性能，耐油性能，涂膜与铁基体，面漆的给合力及涂膜表面电阻进行研究，同时指出了该涂料在军用电子产品上的应用前景。     

DISTORTION THEOREM FOR BIHOLOMORPHIC MAPPINGS IN TRANSITIVE DOMAINS (III)

The distortion theorem for biholomorphic convex mappings in bounded symmetric domains are considered. Especially the distortion theorem for biholomorphic convex mappings in classical domain of type IV and two exceptional domains are given.     

Evaluation of Qbd for electrons tunneling fromthe Si/SiO2 interface compared to electron tunneling from thepoly-Si/SiO2 interface

Electrical time-to-breakdown (TTB) measurements have shown the charge to breakdown Q_bd of gate oxide capacitors fabricated on n-type well (n-well) substrates always to be higher than that of capacitors on p-type well (p-well) substrates on the same wafer when both are biased into accumulation under normal test conditions. Here the authors correlate the higher n-well Q_bd to smooth capacitor oxide/substrate interfaces and minimized grain boundary cusps at the poly-Si gate/oxide interfaces, confirming that Fowler-Nordheim tunneling is the dominant current conduction mechanisms through the oxide. They correlate higher Q_bd to higher barrier height for a given substrate type and observe that the slope of the barrier height versus temperature plot is lower for both p-well and n-well cases with electrons tunneling from the silicon substrate. This is attributed to surface roughness at the poly-Si gate/SiO₂ interface. A poly-Si gate deposition and annealing process with clean, smooth oxide/substrate interfaces will improve the p-well breakdown characteristics and allow higher Q_bd to be achieved     

几何位相非线性变化的实验研究

本文报道了Pancharatnam位相非线性变化的实验研究，实验结果与理论预言符合得很好。Pancharatnam位相的这种非线性可能在光开关中得到应用。     

Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

The perturbation bounds for the solution of weighted kronecker product linear systems using thew-weighted drazin inverse

The classical perturbation theory is extended to the weighted Kronecker product linear systems W(A? B)Wx =h. Upper bounds are derived for the normwise condition number.     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

ON THE GENERALIZATIONS OF KALANDIA＇S LEMMA

Based on Bernstein＇s Theorem, Kalandia＇s Lemma describes the error estimate and the smoothness of the remainder under the second part of Hoelder norm when a HSlder function is approximated by its best polynomial approximation. In this paper, Kalandia＇s Lemma is generalized to the cases that the best polynomial is replaced by one of its four kinds of Chebyshev polynomial expansions, the error estimates of the remainder are given out under Hoeder norm or the weighted HSlder norms.