Radio wave propagation over finite size plateau

The problem of radio wave propagation over a perfectly conducting, infinitely wide rectangular plateau of finite length has previously been solved. (see Electron. Lett., vol.25, p.707-9, 1989). This solution is now extended to deal with a perfectly conducting, rectangular plateau of finite size along all three coordinate axes. When the infinite width is reduced to a finite size the additional diffraction round the two sides of the plateau will produce a more complicated expression for the overall attenuation. The authors quantify the new attenuation and derive an approximate analytic expression for the attenuation function in closed form. Experimental confirmation of the calculated result both as a function of distance along the propagation path and as a function of transverse displacement of the plateau perpendicular to the propagation path is presented     

一维应变压缩下TC4钛合金绝热剪切研究

 利用内径为57 mm的压缩气炮，在撞击速度为0.2~1.2 km/s（相应的靶中压力为3~15 GPa）范围内进行对称碰撞实验，以研究TC4（Ti-Al6-V4）钛合金在一维应变冲击压缩条件下的绝热剪切现象。对回收得到的受冲击样品，在扫描电镜（SEM）下进行细观金相分析。结果指出，一维应变冲击压缩条件下，TC4钛合金中绝热剪切带产生的对称碰撞速度阈值为500 m/s（相当于样品中的压力为5.87 GPa）；主剪切带与冲击方向约为45°角，带上有圆形和椭圆形两种孔洞且随碰撞速度的增大而增多和长大，这是典型的韧性损伤特征。随碰撞速度增大，产生与主剪切带成15°角的支剪切带。这些与理论预言相符。X射线能谱分析结果指出，剪切带内材料发生了(α+β)→β相的转变，是典型的相变带。剪切带的温度估算与实验提供的信息吻合。     

基于杂波跟踪的CFAR检测研究

通过设立专门通道将图像处理技术应用于雷达检测域杂波功率数据处理,对特征杂波进行跟踪,为恒虚警处理提供背景信息.本文介绍了对抗杂波边缘的自适应CFAR检测器设计中的研究工作,设计了基于杂波跟踪的杂波属性CF(clutter feature)-CFAR检测器和结构元素SE(structuring element)-CFAR检测器,对其检测性能进行了分析.并通过蒙特卡罗(Monte Carlo)仿真方法对上述两种检测器的检测性能进行了仿真.     

半导体元件清洗技术浅谈

随着社会的进步和科学技术的迅猛发展,对洗净技术的要求也越来越高。清洗方式多种多样,但最主要的是突出在喷射清洗和超声波清洗两大方面,应用于全国各行各业,并且也得到了明显进步。     

Investigation on ultrafast thrid—order optical nonlinearity of metal（dmit）2／mnt）2 Charge transfer complexes

We have investigated the transient third-order optical nonlinearity of the solutions of Metal(dmit)2/(mnt)2 salts in acetone by employing femtosecond optical Kerr gate measurement at 830nm wavelength.An order of enhancement on the second-order hyperppolarizability is found for the above salts with central atoms of Cu and Ni.We have suggested an explanation for the enhancement based on the extension of electronic conjugation by the entring Cu or Ni atom.     

Thickness decrease of a grafted polyelectrolyte membrane exposed to shear flow

The effect of the shear flow on the thickness change of a polyelectrolyte membrane grafted onto a glass substrate was directly investigated with a flow cell combined with a confocal laser scanning microscope. The membrane thickness decreased proportionally to an increase in the shear stress of the flow when the shear rate exceeded a critical value of 1 s^?1. The higher the ionic strength was of the fluid, the greater the thinning effect was. The correlation between the critical shear rate and the relaxation of the polymer in the gel membrane was examined. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2808–2815, 2003     

软x射线近贴显微技术

软x射线近贴显微技术不但可使活的生物样品成象,分辨率高于光学显微镜,而且人为的样品准备程序在该技术中都可避免。本文描述了用高功率激光打靶产生的等离子体作为软x射线源而进行的近贴显微研究,并得到了分辨率好于1μm的结果。     

激光束偏转法检测金属表面层的缺陷

本文编程计算了由激光光热应产业的金属表面的温度分布和泵浦光的调制频率、金属层厚度等的关系，预言检测浓度缺陷的能力。用激光光束偏转法检测到表面下不同深处的缺陷，并把面扫描幅值信号以三维象和灰度象显示。     

Miniature InGaAsP/InP phase modulator for integrated opto-electronics

Miniature, etching ridge InGaAsP/InP Phase Modulator with highly efficient phase shifting efficiency of 60°/V.mm and 43°/V.mm for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.52 μm are reported. It is well suited for integrated opto-electronics. Some functions depending on bandwidth of the devices are discussed.     

The base current degradation of poly-emitter BJTs under AC stress

A simple model for the analysis of the ac stress effect in poly-emitter bipolar transistors is presented. Apart from the reverse-bias induced hot-carrier effects, the forward-bias recovery effect is a key factor under ac stress, it obviously suppresses the base current degradation of the device which is caused during the reverse-bias periods. In this work, we derived the relationship between the excess base current and the stress time for different ac stress conditions. This model is verified with experimental results.<>