Fabrication of Photoprocessable Materials via Photopolymerization Using an Acid-Induced Photocleavable Platinum-Acetylide Crosslinker

Photopolymerization and photoprocessing are core technologies for molding and tuning polymer materials. However, they are incompatible with single materials owing to their contradictory photoreactivity. Herein, an acid-induced photocleavable crosslinker, a platinum–acetylide complex covered by permethylated cyclodextrins, enables the fabrication of photoprocessable materials via photopolymerization with N-(2-hydroxyethyl)acrylamide. The polymer networks are molded by 365 nm irradiation as well as softened and degraded by a cooperative reaction with HCl as an acidic additive under 365 nm UV light, or 470 nm visible light in the presence of a photosensitizer. Moreover, the crosslinker is applied to a photoadhesive triggered by 365 nm irradiation. The adhesion is detachable on-demand through acid-induced photodegradation with the same wavelength and intensity of irradiation. Thus, acid-induced photocleavage allows the integration of light-induced molding and processing under various lights of various wavelengths, opening up new strategies for polymer technologies.     

A Large Bandgap Organic Salt Dopant for Sn-Based Perovskite Thin-Film Transistor

Metal halide perovskite optoelectronic devices have made significant progress over the past few years, but precise control of charge carrier density through doping is essential for optimizing these devices. In this study, the potential of using an organic salt, N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate, as a dopant for Sn-based perovskite devices, is explored. Under optimized conditions, the thin film transistors based on the doped 2D/3D perovskite PEAFASnI₃ demonstrate remarkable improvement in hole mobility, reaching 7.45 cm²V⁻¹s⁻¹ with a low subthreshold swing and the smallest sweep hysteresis (ΔV_hysteresis = 2.27 V) and exceptional bias stability with the lowest contact resistance (2.2 kΩ cm). The bulky chemical structure of the dopant prevents it from penetrating the perovskite lattice and also surface passivation against Sn oxidation due to its hydrophobic nature surface. This improvement is attributed to the bifunctional effect of the dopant, which simultaneously passivates defects and improves crystal orientation. These findings provide new insights into potential molecular dopants that can be used in metal halide perovskite devices.