Anodic oxidation mechanism of 3-arylaminoindoles at a rotating and at a (new type of) pulsing platinum electrode in dipolar aprotic solvents

The oxidation of 2-phenyl-3-arylaminoindoles (1a–e) has been studied in acetonitrile, dimethylformamide and propylene carbonate at a new type of platinum electrode with periodical renewal of the diffusion layer and at a rotating platinum electrode by cyclic voltammetry, d.c. and a.c. voltammetry, controlled potential coulometry and spectrometry (e.s.r. and u.v.). In the examined aprotic solvents and in the presence of a base (like water or diphenylguanidine) amines 1a–e undergo a two-electron oxidation to the corresponding imines. In a protophobic medium (acetonitrile or propylene carbonate) 1a–e are oxidized in two one-electron steps, the first of which leads to the formation of a cation radical (identified by e.s.r. spectrum), oxidizable at more positive potentials (second step). The second electron transfer, however, must be simultaneous with, or be immediately followed by, a very fast deprotonation reaction. The same e.e.c. sequence explains the observed bielectronic step of 1a–e in a protophilic aprotic solvent, like dimethylformamide.     

Determination of calcium,strontium and barium in single crystals of alkali halides by neutron activation

The determination by neutron activation of trace quantities of calcium, strontium and barium in single crystals of alkali halides has been studied. The matrix is eliminated before the irradiation by an ion-exchange procedure. Gamma spectroscopy after radiochemical separation is used to determine strontium and barium. Calcium is determined by measuring the β-activity of ⁴⁹Sc formed by the decay of ⁴⁹Ca. Long-lived radioactive tracers are used to determine the chemical yields.     

Combined IR and XPS analysis of the native (1 0 0) surface of single‐crystalline silicon after HFaq etching

A combined analysis, based on angle‐resolved X‐ray photoelectron spectroscopy and multiple‐internal‐reflection infrared spectroscopy, of the (1 0 0) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH₂ and SiH₃ terminations, but contains (in addition to sub‐stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HF_aq‐etched surface. Copyright © 2007 John Wiley & Sons, Ltd.     

Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle

A nanoscale double-gate MOSFET is simulated with an energy-transport subband model for semiconductors formulated starting from the moment system derived from the Schr?dinger–Poisson–Boltzmann equations. The system is closed on the basis of the maximum entropy principle and includes scattering of electrons with acoustic and non-polar optical phonons. The proposed expression of the entropy combines quantum effects and semiclassical transport by weighting the contribution of each subband with the square modulus of the envelope functions arising from the Schr?dinger–Poisson subsystem. The simulations show that the model is able to capture the relevant confining and transport features and assess the robustness of the numerical scheme.     

Oxidation of α-Acetoxy Acetals with Trichloroisocyanuric Acid

α-Acetoxy acid methyl esters are prepared in excellent yields by treating aliphatic α-acetoxy dimethyl acetals with trichloroisocyanuric acid in DMF.