ISDN在电视会议和因特网中的应用

本文介绍ISDN的基本概念 ,中国ISDN业务飞速发展的状况。并结合实际 ,着重讨论了ISDN与电视会议系统、ISDN与Internet的接入等当今ISDN应用最广泛的业务。     

一种高精密集成运算放大器的研制

基于运算放大器的基本原理和一些关键技术(基流自举补偿、偏置微调等)的运用,成功地研制出一种双极型高精度低失调集成运算放大器.测试结果显示,该运算放大器失调电压仅为10 μV,失调电流小于1 nA,开环增益为120 dB,单位增益带宽680 kHz.     

Terahertz Transmission Imaging with 2.52 THz Continuous Wave

In this article, two terahertz transmission imaging systems are built with a 2.52 THz continuous wave laser and two types of sensors. One is array scanning system using a 124×124 pyro-electric array camera as the detector; the other is a point-wise scanning system utilizing a Golay cell as the detector. The imaging speed and quality is briefly analyzed. Terahertz （THz） imaging results demonstrate that the array scanning system has higher imaging speed with lower resolution. The point-wise scanning system has higher imaging quality with lower speed.     

TIG焊快速制造激光视觉检测系统的研究

为了研究钨极惰性气体保护焊(TIG)快速制造中金属结构成形的效果及工件变形情况,获取金属结构高度及其变化范围,通过对激光视觉传感所得到的图像进行分析,采用激光视觉检测的方法,制作了一种激光视觉检测系统。经与实验获得的实际金属结构高度数据对比,得到金属结构高度检测的误差在单道焊缝的自然成形的高度误差范围内的结果。结果表明,该方法可以比较有效地获得金属结构高度及母材工件变形情况。     

SDH/SONET支路时钟抖动衰减数字锁相环设计

提出了一种新的光纤通信网络中SDH/SONET支路时钟抖动衰减设计方法.采用全数字锁相环技术和可编程的方法,根据不同类型的PDH信号,配置相应的增益和衰减因子,使得时钟的抖动衰减收敛速度可调节,能快速的达到国际电信联盟ITU-T标准规定的抖动范围.对于E3信号,滤波组合为100 Hz～800 kHz时,最大峰峰抖动为0.05 UI,滤波组合为10～800 kHz时,最大峰峰抖动小于10-3 UI.该方法电路实现结构简单,可广泛应用于光纤通信领域.     

折-衍光学镜片的单点金刚石车削与检测

讨论了折-衍光学镜片的设计、加工和检测.结合设计采用单点金刚石车削工艺加工出了具有连续浮雕结构的折-衍光学镜片.对加工成的折-衍光学镜片采用先进的数字化检测,结果表明,面型精度为0.228μm,表面粗糙度为1.279 nm,台阶位置误差小于1/3波长.对折-衍光学镜片加工中产生的遮挡效应和光的透过率损失给出了定量的分析...     

基于SVM的Telnet隐蔽信道检测

基于Telnet的隐蔽信道将隐匿的消息直接附加在Telnet的网络数据中,并发送至远程"服务器"。由于键盘操作具有任意性,检测这种信道比较困难。通过分析Telnet隐蔽信道技术,提出针对该隐蔽信道的检测方法。检测方法使用了一分类支持向量机(SVM),抓取用户正常操作的网络数据包作为检测样本,并利用样本数据间的时间间隔构造检测向量。试验表明,利用这种方法对基于Telnet的隐蔽信道进行检测,检测率达到100%,且虚警率较低。     

手机图像处理技术专利现状

随着彩信手机、拍照手机、智能手机等手机的发展,手机已不再简单地只是打电话发短信的一个工具,而渐渐成为集个性化、娱乐化为一体的数据中心.如何满足用户在获取图像后对图像进行个性化处理的需求,就变得十分重要.因此,手机图像处理已然成为手机技术发展的研究热点.针对手机图像处理领域的专利文献,给出了该领域主要申请人的申请量分布图,并对该领域的重要专利分布进行分析.     

Epitaxy of Layered Orthorhombic SnS–SnSxSe(1−x) Core–Shell Heterostructures with Anisotropic Photoresponse

Vertical and in‐plane heterostructures based on van der Waals (vdW) crystals have drawn rapidly increasing attention owning to the extraordinary properties and significant application potential. However, current heterostructures are mainly limited to vdW crystals with a symmetrical hexagonal lattice, and the heterostructures made by asymmetric vdW crystals are rarely investigated at the moment. In this contribution, it is reported for the first time the synthesis of layered orthorhombic SnS–SnS_xSe_(1?x) core–shell heterostructures with well‐defined geometry via a two‐step thermal evaporation method. Structural characterization reveals that the heterostructures of SnS–SnS_xSe_(1?x) are in‐plane interconnected and vertically stacked, constructed by SnS_xSe_(1?x) shell heteroepitaxially growing on/around the pre‐synthesized SnS flake with an epitaxial relationship of (303)_SnS//(033)_SnSxSe(1?x), [010]_SnS//[100]_SnSxSe(1?x). On the basis of detailed morphology, structure and composition characterizations, a growth mechanism involving heteroepitaxial growth, atomic diffusion, as well as thermal thinning is proposed to illustrate the formation process of the heterostructures. In addition, a strong polarization‐dependent photoresponse is found on the device fabricated using the as‐prepared SnS?SnS_xSe_(1?x) core–shell heterostructure, enabling the potential use of the heterostructures as functional components for optoelectronic devices featured with anisotropy.     

Ionic Modulation of Interfacial Magnetism in Light Metal/Ferromagnetic Insulator Layered Nanostructures

Ferromagnetic insulator thin film nanostructures are becoming the key component of the state‐of‐the‐art spintronic devices, for instance, yttrium iron garnet (YIG) with low damping, high Curie temperature, and high resistivity is explored into many spin–orbit interactions related spintronic devices. Voltage modulation of YIG, with great practical/theoretical significance, thus can be widely applied in various YIG‐based spintronics effects. Nevertheless, to manipulate ferromagnetism of YIG through electric field (E‐field), instead of current, in an energy efficient manner is essentially challenging. Here, a YIG/Cu/Pt layered nanostructure with a weak spin–orbit coupling interaction is fabricated, and then the interfacial magnetism of the Cu and YIG is modified via ionic liquid gating method significantly. A record‐high E‐field‐induced ferromagnetic resonance field shift of 1400 Oe is achieved in YIG (17 nm)/Cu (5 nm)/Pt (3 nm)/ionic liquid/Au capacitor layered nanostructures with a small voltage bias of 4.5 V. The giant magnetoelectric tunability comes from voltage‐induced extra ferromagnetic ordering in Cu layer, confirmed by the first‐principle calculation. This E‐field modulation of interfacial magnetism between light metal and magnetic isolator may open a door toward compact, high‐performance, and energy‐efficient spintronic devices.