Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Design model and guidelines for n-well guard ring in epitaxial CMOS

This work reports the development of design model for n-well guard rings in a CMOS process utilizing a low-doped epitaxial layer on a highly doped substrate. The validity of the model has been judged by a wide range of experimental data measured from the fabricated n-well guard ring structures with guard ring width as parameter. From the model developed, guidelines have been drawn to minimize the guard ring width while critically suppressing the amount of electrons escaping from the guard ring     

InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistorsgrown by chemical beam epitaxy

InP-based resonant tunneling hot electron transistors (RHET's) were studied systematically using chemical beam epitaxy (CBE) for the first time. All the RHET's studied have a highly strained AlAs/In_0.75Ga_0.25As/AlAs resonant tunneling double barrier as a hot electron injector, and an InP collector barrier with or without InGaAsP graded layers. The highest transport ratio (α) observed is 0.98, and the highest peak-to-valley current ratios (PVR's) measured are 20 and 200 in the collector current and base current, respectively, at 80 K. A self-consistent simulation is used as a reference to optimize the hot electron injector and to explain the ballistic transport. An energy spectrometer technique was applied to the RHET's for resolving the hot electron energy distribution which showed a full width at half maximum (FWHM) of around 58 meV, indicating ballistic transport of electrons. Finally, room temperature transistor action was also observed with a β of 4 and a cutoff frequency of 31 GHz     

Load-capacity interference and the bathtub curve

Load-capacity (stress-strength) interference theory is used to derive a heuristic failure rate for an item subjected to repetitive loading which is Poisson distributed in time. Numerical calculations are performed using Gaussian distributions in load and capacity. Infant mortality, constant failure rate (Poisson failures), and aging are shown to be associated with capacity variability, load variability, and capacity deterioration, respectively. Bathtub-shaped failure rate curves are obtained when all three failure types are present. Changes in load or capacity distribution parameters often strongly affect the quantitative behavior of the failure-rate curves, but they do not affect the qualitative behavior of the bathtub curve. Neither is it likely that the qualitative behavior will be affected by the use of nonGaussian distributions. The numerical results, however, indicate that infant mortality and wear-out failures interact strongly with load variability. Thus bathtub curves arising from this model cannot be represented as simple superpositions of independent contributions from the three failure types. Only if the three failure types arise from independent failure mechanisms or in different components is it legitimate simply to sum the failure rate contributions     

Two's complement quantization in orthogonal biquad digital filters

A special class of complex biquad digital filters called orthogonal filters are investigated for stability under two's complement quantization. A sufficient condition is derived for the asymptotic stability of the nonlinear filter. Bounds on the possible limit cycles are also obtained. Using these bounds, any given filter can be tested for stability. The stability triangle is then scanned using a dense grid, and each point on the grid is tested for stability/limit cycles. By this method, the stability region given by the sufficient condition is extended. Regions within the linear stability triangle where various types of limit cycles are possible are also identified.     

Design considerations for Rowland circle gratings used in photonicintegrated devices for WDM applications

Design issues of photonic integrated devices for WDM applications based on Rowland circle gratings have been studied. Effects of grating period, diffraction order, grating aperture (size), and Rowland circle size on device performance are discussed. The point spread function of a typical Rowland circle grating is evaluated numerically which yields an optical image (spot) size of several microns in diameter. Our study shows that there is a tradeoff between channel dispersion and feedback efficiency in choosing the grating period when a Rowland circle grating is used as the wavelength-selective element for a parallel-waveguide-type wavelength division multiplexing device     

Performance and reliability enhancement for CVD tungsten polycidedCMOS transistors due to fluorine incorporation in the gate oxide

The impacts of CVD tungsten polycide (WSi_x) on MOSFET performance and reliability are studied in this letter. The WSi_x process is shown to enhance the S/D lateral extent for both N- and P-channel devices via C_GD and L_eff measurements, confirming previous suspicion. This enhanced S/D extent is found to be easily modulated by drain-to-gate bias, which is favorable for achieving both higher drive currents and higher S/D punch-through voltages than those of non-WSi_x devices. Both electron and hole mobility for the WSi_x device are also slightly higher and closer to the published data compared to the non-WSi_x case. These effects together yield about >5% improvement for nMOSFET and >10% improvement for pMOSFET in drive current at a given punch-through voltage. The channel hot-electron lifetime for the n-channel WSi_x device is about 10 times higher than that of the non-WSi_x one. These enhancements in both performance and reliability make the WSi_x device very attractive fog VLSI CMOS technologies     

一种系统信息提示的方法及其在汇编程序设计中的实现

本文介绍了系统信息提示的一种方法，井重点讨论了用８０８８汇编语言实现的方法。它采用基本信息串表和索引表，对于使用频度较高的系统，可以大大节约系统内存，具存较好的实性用。     

Hybrid switching and p-routing for optical burst switching networks

One promising switching technology for wavelength-division multiplexing optical networks is optical burst switching (OBS). However, there are major deficiencies of OBS. (1) The delay offset between a control message and its corresponding data burst is based on the diameter of a network. This affects network efficiency, quality-of-service, and network scalability.( 2) OBS adopts one-way resource reservation scheme, which causes frequent burst collision and, thus, burst loss. We address the above two important issues in OBS. In particular, we study how to improve the performance of delay and loss in OBS. To reduce the end-to-end delay, we propose a hybrid switching scheme. The hybrid switching is a combination of lightpath switching and OBS switching. A virtual topology design algorithm based on simulated annealing to minimize the longest shortest path through the virtual topology is presented. To minimize burst collision and loss, we propose a new routing algorithm, namely, p-routing, for OBS network. The p-routing is based on the wavelength available probability. A path that has higher available probability is less likely to drop bursts due to collision. The probability-based p-routing can reduce the volatility, randomness, and uncertainty of one-way resource reservation. Our studies show that hybrid switching and p-routing are complementary and both can dramatically improve the performance of OBS networks.