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Liang Y.C. Wenjiang Zeng Pick Hong Ong Zhaoxia Gao Jun Cai Balasubramanian N. 《Electron Device Letters, IEEE》2002,23(12):700-703
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology. 相似文献
13.
Guofen Yu Yuanci Gao Shenggang Liu Wenxiang Wang Jin Wu 《International Journal of Infrared and Millimeter Waves》2002,23(8):1261-1269
Analysis of the field distributions in a single biological cell under electromagnetic wave is given. With Debye approximation, the dielectric relaxation of each part of the cell, including the extracellular and cellular media, the cell membrane and the nuclear membrane, was taken into account. Making use of some typical parameters for a cell, the voltage across nuclear and cytoplasma membranes under electromagnetic waves are calculated up to millimeter wave frequency range. The calculated result indicates that it is unlikely to generate electroporation by present available millimeter wave sources. 相似文献
14.
Zhang Li Chun Jin Hai Yan Ye Hong Fei Gao Yu Zhi Ning Bao Jun Mo Bang Xian 《Electron Devices, IEEE Transactions on》2002,49(6):1075-1076
A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm2. The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively 相似文献
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This letter presents some further results on the local stability in equilibrium for Internet congestion control algorithm proposed by Low et al., (IEEE/ACM Transactions on Networking, 1999). The propagation delay d(t) is assumed to be time-varying and have maximum and minimum delay bounds (i.e., d/sub m//spl les/d(t)/spl les/d/sub M/), which is more general than the assumption (0相似文献
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In recent years, constructing a virtual backbone by nodes in a connected dominating set (CDS) has been proposed to improve the performance of ad hoc wireless networks. In general, a dominating set satisfies that every vertex in the graph is either in the set or adjacent to a vertex in the set. A CDS is a dominating set that also induces a connected sub‐graph. However, finding the minimum connected dominating set (MCDS) is a well‐known NP‐hard problem in graph theory. Approximation algorithms for MCDS have been proposed in the literature. Most of these algorithms suffer from a poor approximation ratio, and from high time complexity and message complexity. In this paper, we present a new distributed approximation algorithm that constructs a MCDS for wireless ad hoc networks based on a maximal independent set (MIS). Our algorithm, which is fully localized, has a constant approximation ratio, and O(n) time and O(n) message complexity. In this algorithm, each node only requires the knowledge of its one‐hop neighbours and there is only one shortest path connecting two dominators that are at most three hops away. We not only give theoretical performance analysis for our algorithm, but also conduct extensive simulation to compare our algorithm with other algorithms in the literature. Simulation results and theoretical analysis show that our algorithm has better efficiency and performance than others. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
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本文介绍了HSDPA的发展背景,针对HSDPA的主要技术特点,依据市场发展规划、用户需求等方面对HSDPA部署进行探讨,并对HSDPA的覆盖与容量方面进行规划分析. 相似文献
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使用结构简单的单温炉设备,通过三步升温热解二茂铁、三聚氰氨混合物方法,在二氧化硅、多晶陶瓷基底上分别合成了碳纳米管阵列、碳纳米管捆束.使用扫描电子显微镜、透射电子显微镜、电子能量损失谱和x射线光电子能谱对合成样品进行了结构和成分分析.结果显示:两种基底上合成的纳米管均为多壁纯碳管;生长于光滑二氧化硅表面的碳纳米管具有高度取向性和一致的外径,长度为10—40μm.碳纳米管采取催化剂顶端生长模式并展示出类杯状形貌;生长于粗糙多晶陶瓷表面的碳纳米管捆束随机取向,碳纳米管直径为15—80nm,长度在几百微米,展示
关键词:
碳纳米管
热解法
三步升温工艺 相似文献
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