高压沿面放电烟气脱硫技术动态实验研究

本文针对高压沿面放电活化气体的烟气脱硫技术,在静态实验研究的基础上进行了实验室冷态动态的实验研究。设计了便于反应和测量的动态实验装置。实验解释了电子束法脱硫技术中导致氨气泄漏的部分原因,验证了高压沿面放电脱硫技术可以在较低的运行电压下,达到提高脱硫效率,减少氨气泄漏的作用。     

纳米β-Ni(OH)2与球型Ni(OH)2的热性能比较研究

用配位沉淀法合成出纳米级Ni（OH）2，并对其进行XRD，TEM，DSC分析，分析结果表明，所得纳米β-Ni（OH）2为可用作电极材料的β-Ni（OH）2，粒径为30－40nm，且热分解温度比普通球镍低10℃左右，摩尔分解热比普通球镍低4－7kJ，从理论上分析了产生此现象的原因。     

基于演化博弈的武器装备研制合同定价模型研究

针对合同的动态性，提出利用基于演化博弈建立定价模型。考虑到决策群体中个体的认识误差，对所建立的定价模型进行修正，建立带偏离的定价模型并分析了偏离对均衡解的影响。最后将以上模型应用实例进行比较分析。     

分割电极片状压电致动器——(二)位移特性及狭缝宽度对其影响的实验研究

研究了悬臂梁式分割电极片状压电致动器的位移特性。理论分析表明，分割电极狭缝宽度会减小致动器自由端的位移输出，但当狭缝宽度小于致动器电极宽度的１０％时，可忽略狭缝宽度的影响。致动器端部位移的测试结果大于理论计算值。与现有磁头悬浮臂尺寸相近的致动器，在２０Ｖ～５０Ｖ的电压驱动下均可获得１μｍ～２μｍ的致动位移。对９８５０道／厘米的密度磁盘，该位移能覆盖至少一个磁道宽度，满足磁头定位两级伺服系统对第二级致动器位移的基本要求。     

闭排队网络中性能势与无穷小实现因子之间的关系

In this paper,the concept of the infinitesimal realization factor is extended to the parameter-dependent performance functions in closed queueing networks. Then the concepts of realization matrix (its elements are called realization factors) and performance potential are introduced,and the relations between infinitesimal realization factors and these two quantities are discussed. This provides a united framework for both IPA and non IPA approaches. Finally,another physical meaning of the service rate is given.     

HL—1装置中心热区电子热传导初步分析

在电流及温度分布满足“不变性”原理的基础上,本文分析了等离子体中心热区的能量平衡,求出了电子热传导系数,根据实验数据拟合出HL-1装置电子热传导系数的定标关系为X_e=6.8(n_(eq1))~(-1.2)。此关系与其他托卡马克装置的结果类似。     

浅谈ispLSI及其应用

本文以ｉｓｐＬＩＳＩ１０００系列为例，对ｉｓｐ技术及ｉｓｐＬＳＩ器件进行了较为详细的介绍，并结合具体设计实例，介绍ｉｓｐＬＳ开发工具的使用。     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

Microstructure Evolution in Laser RS Co-base Metastable Alloy

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