Proton conductivity of phosphoric acid derivative of fullerene

The proton conductive property of methano [60] fullerene diphosphoric acid has been investigated under various humidity conditions at the temperature range between 15 and 45 °C. It shows proton conductivity as high as 10⁻² S cm⁻¹ at 25 °C under relative humidity of 95%. Thermal analyses including TG–DTA and thermal desorption mass spectroscopy (TDS) confirm that the compound is thermally stable up to 200 °C. Proton conduction of the compound depends very much on humidity or water content. The logarithmic conductivity at 25 °C is increased linearly with increasing relative humidity. The activation energy (E_a) estimated from the slope of log(σT) vs. 1/T is decreased from 1.08 to 0.52 eV, as the relative humidity is increased from 40% to 75%. The humidity dependence of conductivity is discussed in the light of the observed hydration isotherm.     

甲基紫掺杂聚乙烯醇薄膜材料红光多重全息存储

甲基紫掺杂聚乙烯醇薄膜材料在两束相干光照射下生成相位光栅.当改变一束相干光光程,通过监测相位光栅的一级衍射信号强度的变化,可以检测相位光栅的生长和擦除过程.在此实验基础上,讨论了甲基紫掺杂聚乙烯醇薄膜材料多重全息存储的原理与结果.     

光纤白光干涉仪等臂长技术研究

介绍了几种光纤干涉仪等臂长技术,比较了各自的优缺点和适用范围,对光纤干涉仪的平衡有较大的参考价值。     

BP神经网络-FTIR方法测定苯乙烯-丙烯酸丁酯共聚物中单体含量

利用红外特征峰波数偏移值与单体含量间的非线性定量关系,BP人工神经网络-FTIR法在较宽的含量范围(10%-90%之间)之内,准确测定了苯乙烯-丙烯酸丁酯共聚物中丙烯酸丁酯单体含量,回收率在97.3%-101.8%之间.     

SiOx纳米管的制备及其发光特性

以液态金属镓为媒介,利用热蒸发法合成大量非晶SiOx纳米管,这些纳米管管径均匀分布,平均约80 nm,长度大于10μm,且管内外径比例较小．分析发现,在实验过程中,熔入金属镓液滴中的硅元素和氧元素结合并从液滴的表面饱和析出,形成以镓为中心的非晶SiOx纳米管状结构．在室温中,利用260 nm的激发光源激发SiOx纳米管,发现在蓝光波段附近发出强而稳定的PL谱线,这可能与样品中的氧缺陷和空位有关．     

Fiber-optic reflex sensor for in-line production measurement

The paper describes experiments concerning distance measurement with fiber-optic sensor and improvement of the measurement principle. The sensor probe was well-designed with a small structure and multi-function. The novel optical fiber probe arrangement as well as the possibilities of use for complex measurement problems are explained using the measurement of an internal screw thread as an example. The experimental results show that the measurement uncertainty of the thread minor diameter can reach ±10 μm, and the stability of the measurement system is better than 0.07%.     

长距离管线监测系统的一种智能化过流防护方法

介绍了长距离管线监测系统的一种智能化过流防护方法，详细说明其电路设计原理及相关元件的选择，并与串联自复过流保护元件方式相比较，分析其整体性能，说明其具有响应速度快，安全可靠等特点。     

基于MATLAB(SIMULINK)的电弧炉电极调节系统FUZZY-PD控制器的仿真

介绍了采用MATLAB V5.2提供的模糊逻辑工具箱来设计研究电孤纺电极调节系统中的模糊－－PD控制器，讨论了在SIMULINK环境下模糊－PD控制器的参数自调速原理、结构、建立模糊控制规则库和模糊推论方法，并给出仿真结果与结论。     

Kolmogorov Width of Classes of Smooth Functions on the Sphere

Let ^d−1{(x₁,…,x_d) ^d:x²₁+···+x²_d=1} be the unit sphere of the d-dimensional Euclidean space ^d. For r>0, we denote by B^r_p (1p∞) the class of functions f on ^d−1 representable in the formwhere dσ(y) denotes the usual Lebesgue measure on ^d−1, and P^λ_k(t) is the ultraspherical polynomial.For 1p,q∞, the Kolmogorov N-width of B^r_p in L^q( ^d−1) is given bythe left-most infimum being taken over all N-dimensional subspaces X_N of L^q( ^d−1).The main result in this paper is that for r2(d−1)²,where A_NB_N means that there exists a positive constant C, independent of N, such that C⁻¹A_NB_NCA_N.This extends the well-known Kashin theorem on the asymptotic order of the Kolmogorov widths of the Sobolev class of the periodic functions.     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.