无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

脑细胞激活素药物的化学成分分析

采用日本岛津LC-60A型高压液相色谱仪和美国P-E3030型原子吸收分光光度计，对该药进行了氨基酸、维生素和化学元素的含量测定。结果表明，该药含有18种氨基酸，不少于3种维生素和20几种化学元素，为进一步改进该药物的合理配制方法和临床应用提供了参考数据。     

CO_2激光对兔脑组织血脑屏障的影响

同等功率和照射时间条件下,在14只家兔大脑皮质运用伊文思蓝染料和超微结构观察方法进行血脑屏障改变的研究。结果表明:CO_2激光作用十分表浅,且激光作用后的水肿层血脑屏障改变是可逆的。     

B值鞅型序列的一些极限定理

本文讨论了一些B值鞅型序列的强大数定律 ,弱大数定律 ,Lr收敛性及完全收敛性 ,推广了许多熟知的结果 .     

Ca原子的Penning离化

用614.3nm染料激光照射以Ne为缓冲气体的Ca空心阴极灯,观察到了Ca原子的Pen-ning离化效应。对比在Li空心阴极灯中获得的光电流信号,解释了Ca原子的彭宁离化。     

Bloch Oscillations of Two-Component Bose-Einstein Condensates in Optical Lattices

We study the Bloch oscillations of two-component Bose-Einstein condensates trapped in spin-dependent optical lattices. The influence of the intercomponent atom interaction on the system is discussed in detail Accelerated breakdown of the Bloch oscillations and revival phenomena are found respectively for the repulsive and attractive case. For both the cases, the system will finally be set in a quantum self-trapping state due to dynamical instability.     

自适应相位制中波同步广播及现场试验

在本试验中，采用智能同步广播激励器和ＣＣＴＶ传输的１ＭＨｚ标频，实现了中波同步广播同频保护率趋于０ｄＢ．并提出了自适应相位跟踪同步的概念。     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

High temperature superconducting thin films for microwave filters

YBa₂Cu₃O_7-δ and Tl₂Ba₂CaCu₂O₈ thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.