基于家庭网络的多网络业务融合

分析了基于家庭网络开展多网络业务融合的多种形式和优势，并对基于家庭网络的多网络业务融合的实现方式进行了探讨。     

Surface of Ru/Fe2O3 catalysts used in water-gas shift reaction studied by auger electron spectrometry

Summary Carbon deposits on the surface ofRu/Fe₂O₃ catalysts used in the water-gas shift reaction have been investigated by Auger Electron Spectrometry. A correlation has been found between the thickness of the carbon deposit and the catalytic activity in WGSR. The carbon deposit covers the metallic active centers and blocks their contact with reagents. The dotting of the iron oxide support with sodium has been found to reduce the amount of carbon deposit. .      

固体铝电解电容器用导电高分子制备工艺进展

依据近年的相关专利,综述了用于固体铝电解电容器的导电高分子的最新制备工艺,介绍了导电高分子固体铝电解电容器的结构,详细描述了制备导电高分子的两种主要方法——化学聚合和电化学聚合——及其进展历程。介绍了新颖掺杂剂的发现与使用,对各种工艺的特点进行了评述。     

AIRS/Vis near IR instrument

A component of the Atmospheric Infrared Sounder (AIRS) instrument system is the AIRS/Visible Near InfraRed (Vis/NIR) instrument. With a nadir ground resolution of 2.28 km and four channels, the Vis/NIR instrument provides diagnostic support to the infrared retrievals from the AIRS instrument and several research products, including surface solar flux studies. The AIRS Vis/NIR is composed of three narrowband (channel 1: 0.40-0.44 /spl mu/m; channel 2: 0.58-0.68 /spl mu/m, and channel 3: 0.71-0.92 /spl mu/m) and one broadband (channel 4: 0.49-0.94 /spl mu/m) channel, each a linear detector array of nine pixels. It is calibrated onboard with three tungsten lamps. Vicarious calibrations using ground targets of known reflectance and a cross-calibration with the Moderate Resolution Imaging Spectroradiometer (MODIS) augment the onboard calibration. One of AIRS Vis/NIR's principal supporting functions is the detection of low clouds to flag these conditions for atmospheric temperature retrievals. Once clouds are detected, a cloud height index is obtained based on the ratio (channel 2 - channel 3)/channel 1 that is sensitive to the partitioning of water vapor absorption above and below clouds. The determination of the surface solar radiation flux is principally based on channel 4 broadband measurements and the well-established relationship between top-of-the atmosphere (broadband) radiance and the surface irradiance.     

低阻VDMOSFET的优化设计与制造

文章对9926型双N沟增强型VDMOSFET进行了结构和版图的优化设计。给出了该器件的纵横向结构参数,材料的物理参数和版图总体结构。单胞结构的优化设计使单胞密度达到204万个/cm2,比国际市场现有产品的单胞密度(156万个/cm2)提高了30%。这种设计采用浅n+注入工艺可使器件生产成本下降31%。最后对研制结果进行了分析讨论。     

Injection-locked Fabry-Pe/spl acute/rot laser with electronic feedback for clock recovery from high-speed OTDM signals

We demonstrate the use of an injection-locked Fabry-Pe/spl acute/rot laser diode with electronic feedback for base-rate clock recovery in N/spl times/10 Gb/s optical time-division-multiplexing (OTDM) systems. Injection-locking enhances the resonance frequency of the laser and the electrical feedback achieves strong resonance at the base-rate frequency of the injected data streams, enabling ultrastable electrical clock signal generation at the base rate of 10 GHz. Experimental demonstrations for clock recovery at 10 GHz from 40-Gb/s OTDM data streams and 4-1 demultiplexing of the data using the extracted clock after fiber transmission is presented. The timing jitter measured in the recovered electrical clock is less than 0.25 ps.     

面向空间应用的片上系统集成技术研究

文章采用一种新颖方法对商用IP进行可靠性提升、完善，同时进行容错结构设计,建立了拥有自主知识产权的专用加固型标准单元库，构建了面向空间应用的SoC设计方法与流程，形成了面向空间电子系统的系统集成设计平台，用该技术实现了面向卫星等空间应用的32位嵌入式RISC处理器SoC芯片，获得了一次投片成功。     

High Power Fiber Bundle Array Coupled LDA Module

1 Introduction High power laser diode arrays (LDA) have many advan- tages such as small volume, long working life, high slope efficiency and high optical density, so they have many applications in medical treatment, material pro- cessing, and for the pumping source of solid laser and etc. But unfortunately, the LDA can not be easy to use directly in these fields because of their poor beam quality and extremely asymmetric divergent beams (!x≈ 5°～10°and !y≈20°～35°, for example), so it …     

Laterally coupled buried heterostructure high-Q ring resonators

All-buried InP-InGaAsP ring resonators laterally coupled to bus waveguides are demonstrated. The buried configurations offer a lower built-in refractive index step along the resonator periphery, which affords enhanced optical coupling coefficients between the waveguides and reduced scattering losses caused by the resonator sidewall imperfections. Very low optical intensity attenuations of 0.4 cm/sup -1/ and coupling-limited quality factors of greater than 10/sup 5/ are observed from 200-/spl mu/m-radii ring resonators. The measured spectral linewidth is as narrow as 0.0145 nm.     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.