Quantifying Organization by Means of Entropy

With the aim to reduce disorder and improve efficiency, nodes in an ad hoc network run a self-organization scheme to cooperatively organize the network. Although metrics such as complexity or self-stability are commonly used for evaluation, to the best of our knowledge, none of them quantifies the efficiency to build and maintain an organization (order). We henceforth apply the notion of entropy to ad hoc type wireless networks facilitating a quantification of the internal organizational state generated by different self-organization schemes. Invoking node and link failure probabilities, we expose the dependency of the organizational state on the self-organization protocol of choice.     

Compact, reliable asymmetric optical configuration for cost-effective fabrication of multiplex dot matrix hologram in anti-counterfeiting applications

This study presents a compact optical configuration that can generate a multiplex dot-matrix hologram with complex interlaced images for anti-counterfeiting applications on valuable paper. Varying the orientation of the interference plane can enable the multiplex hologram to be recorded without changing the interference angle of two laser beams. With its simple asymmetric optical setup, a multiplex hologram with many interlaced images can be efficiently fabricated, increasing the cost of imitation. Experimental details of the asymmetric optical setup are also described.     

带有单模糊映射的一般变分不等式解的存在性

众所周知，在各种变分不等式问题中，解的存在性是最基础也是最重要的问题之一．本文的目的是在Hilbert空间中研究带有单模糊映射的一般变分不等式解的存在性．此外，还讨论了几种特殊情况．     

如何加强产品质量管理工作的探讨

从人员质量意识、产品设计质量、原材料/元器件的控制、人员操作质量、产品评审力度等方面,分析质量管理工作中存在的难点,并提出相应的解决措施.     

Enhancement of the Kerr effect for a quantum dot in a cavity

Nonlinear susceptibility of a quantum dot (QD) embedded in a two-sided cavity, is studied theoretically from a weak-coupling to a strong-coupling regime. In the relevance of a quantum logic gate, the corresponding nonlinear phase shifts (Kerr effect) are estimated for coherent wavepackets including one photon on average. In the weak-coupling regime, the phase shift enhances strongly as a function of a coupling constant between the cavity photon and QD, and eventually saturates in the strong-coupling regime. We also show transmission spectra to evaluate the efficiency of the phase shift. Although the efficiency decreases monotonically in the weak-coupling regime, it rises in the strong-coupling regime.     

The Novel Y-Branch With Two Reflectors

A novel Y-branch waveguide with two reflectors is proposed. The normalized transmitted power for the branching angle of 50°is greater than 70%, which is higher than conventional Y-branch with such wide angle.     

A 4.5-GHz 130-nm 32-KB L0 cache with a leakage-tolerant self reverse-bias bitline scheme

This paper describes a 32-KB two-read, one-write ported L0 cache for 4.5-GHz operation in 1.2-V 130-nm dual-V/sub TH/ CMOS technology. The local bitline uses a leakage-tolerant self reverse-bias (SRB) scheme with nMOS source-follower pullup access transistors, while preserving robust full-swing operation. Gate-source underdrive of -220 mV on the bitline read-select transistors is established without external bias voltages or gate-oxide overstress. Device-level measurements in the 130-nm technology show 72/spl times/ bitline active leakage reduction, enabling low-V/sub TH/ usage, 40% bitline keeper downsizing, and 16 bitcells/bitline. 11% faster read delay and 2/spl times/ higher dc noise robustness are achieved compared with high-performance dual-V/sub TH/ bitline scheme. Sustained performance and robustness benefits of the SRB technique against conventional dynamic bitline with scaling to 100- and 70-nm technology is also presented.     

TD-SCDMA技术及市场分析

TD-SCDMA技术优势 2000年5月,在土耳其伊斯坦布尔召开的国际电联大会上,TD-SCDMA被国际电联接纳为第三代移动通信系统标准之一,这标志着中国在移动通信技术领域已经进入世界先进行列.     

Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 /spl times/ 64 pixel (300 /spl mu/m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm/sup 2//V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.