Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

Cyclostationary crosstalk suppression by decision feedbackequalization on digital subscriber loops

Interference from digital signals in multipair cables has been shown to be cyclostationary under some conditions. This work evaluates the performance of a decision feedback equalizer (DFE) in the presence of cyclostationary interference (CI), intersymbol interference (ISI), and additive white noise (AWN). A comparison between a DFE with CI and one with stationary interference (SI) shows the ability of the DFE to substantially suppress CI. Fractionally spaced and symbol-rate DFE equalizers are also compared and the former is found to yield better performance, especially in the presence of CI. The use of a symbol-rate DFE using an adaptive timing technique that finds the receiver's best sampling phase is proposed for when the fractionally spaced DFE cannot be used because of its complexity. The results also demonstrate the potential benefits of synchronizing central office transmitter clocks, if a fractionally spaced DFE is used at the receiver     

Long-wavelength infrared photoinduced switching of a resonanttunneling diode using the intersubband transition

Voltage switching induced by long-wavelength infrared light from a CO₂ laser was observed using a double-barrier resonant tunneling diode (RTD) biased in the bistable region and the intersubband transition (IT) between the quantum confined states. Possible optoelectronic and all-optical switching applications involving hysteresis are proposed and discussed     

Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain     

Hot-carrier aging of the MOS transistor in the presence of spin-onglass as the interlevel dielectric

The effect of introducing a polysilicate or polysiloxane spin-on glass (SOG) as a component of the interlevel dielectric in a multilevel integrated circuit on the hot-carrier aging of the MOS transistor is discussed. It was found that the presence of SOG led to accelerated aging of the MOS transistor: factors of 20 and 5 for silicate and siloxane, respectively. This effect is attributed to water absorbed in the SOG films. a correlation was found for the hot-carrier aging rate and the amount of absorbed water     

Synchronization through system interconnections

An interconnection strategy with built-in adaptive controllersis presented which achieves synchronization of scalar linearsystems: the closed-loop network forces all outputs to followthe same signal asymptotically while maintaining the open-loopcharacteristics. In the design of the output feedback controllers,no knowledge of system parameters is assumed, but each systemmust have the same poles and be high-gain-stable. The proofof the main theorem relies critically on derived systems-theoreticresults and the special system topology as a network of interconnectedsystems. The topology is explained by first solving the simplerproblem of signal synchronization.     

An implicit characteristic-flux-averaging method for the euler equations for real gases

A formulation of an implicit characteristic-flux-averaging method for the unsteady Euler equations with real gas effects is presented. Incorporation of a real gas into a general equation of state is achieved by considering the pressure as a function of density and specific internal energy. The Ricmann solver as well as the flux-split algorithm are modified by introducing the pressure derivatives with respect to density and internal energy. Expressions for calculating the values of the flow variables for a real gas at the cell faces are derived. The Jacobian matrices and the eigenvectors are defined for a general equation of state. The solution of the system of equations is obtained by using a mesh-sequencing method for acceleration of the convergence. Finally, a test case for a simple form of equation of state displays the differences from the corresponding solution for an ideal gas.     

Crystal and molecular structures of 1-[3-(3,4-dimethoxyphenyl)-2-propenoyl]pyrrolidine.

The crystal structure of 1-[3-(3,4-dimethoxyphenyl)-2-propenoyl]pyrrolidine (C15H19NO3) (I) has been determined by X-ray analysis. It crystallizes orthorhombic space group Pbca with a = 24.295(3), b = 15.086(3), c = 7.552(3)A, V = 2768(1)A3, Z = 8, Dcalc = 1.254 g/cm3, mu = (Mo K(alpha)) = 0.87 cm(-1). The title compound has analgesic activity of cycloaliphatic amine part. The molecule is deviated from planar configuration.