全文获取类型
收费全文 | 769964篇 |
免费 | 6500篇 |
国内免费 | 1992篇 |
专业分类
化学 | 354189篇 |
晶体学 | 10124篇 |
力学 | 34022篇 |
综合类 | 26篇 |
数学 | 90329篇 |
物理学 | 209278篇 |
无线电 | 80488篇 |
出版年
2021年 | 6388篇 |
2020年 | 7172篇 |
2019年 | 8095篇 |
2018年 | 10600篇 |
2017年 | 10673篇 |
2016年 | 14977篇 |
2015年 | 8184篇 |
2014年 | 13839篇 |
2013年 | 32012篇 |
2012年 | 24364篇 |
2011年 | 28938篇 |
2010年 | 21839篇 |
2009年 | 22496篇 |
2008年 | 28994篇 |
2007年 | 29593篇 |
2006年 | 27358篇 |
2005年 | 24741篇 |
2004年 | 23094篇 |
2003年 | 20935篇 |
2002年 | 20815篇 |
2001年 | 21723篇 |
2000年 | 17643篇 |
1999年 | 14127篇 |
1998年 | 12571篇 |
1997年 | 12383篇 |
1996年 | 11474篇 |
1995年 | 10488篇 |
1994年 | 10653篇 |
1993年 | 10133篇 |
1992年 | 10605篇 |
1991年 | 11039篇 |
1990年 | 10580篇 |
1989年 | 10155篇 |
1988年 | 9889篇 |
1987年 | 9143篇 |
1986年 | 8662篇 |
1985年 | 11006篇 |
1984年 | 11510篇 |
1983年 | 9741篇 |
1982年 | 9945篇 |
1981年 | 9511篇 |
1980年 | 9153篇 |
1979年 | 9467篇 |
1978年 | 9954篇 |
1977年 | 9792篇 |
1976年 | 9759篇 |
1975年 | 9223篇 |
1974年 | 9146篇 |
1973年 | 9467篇 |
1972年 | 6878篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
121.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
122.
The introduction of high spatial and spectral resolution sensors on-board remote-sensing spacecraft has increased, by orders of magnitude, the data rates which need to be sustained on the down-link or cross-link transmission channels. Since these channels are severely limited in capacity, the need arises to perform on-board compression to reduce the volume of data which would need to be down-linked. This paper discusses the development and refinement of a low complexity lossy spectral/spatial compression method which provides high compression ratios at low levels of distortion. The developed techniques uses pixels in adjacent bands to predict the intensity of pixels in the band being compressed via a simple linear prediction model. This prediction method when combined with a low-distortion discrete cosine transform (DCT) block coding method yields performance comparable to block-adaptive Karhunen-Loeve Transform (KLT)-DCT methods without incurring the complexity penalty of the KLT. The methods' performance suffers under misregistration. A fractional-pixel interpolation enhancement to the basic technique significantly improves the performance in the case of misregistered bands 相似文献
123.
Storage performance-metrics and benchmarks 总被引:2,自引:0,他引:2
Chen P.M. Patterson D.A. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1993,81(8):1151-1165
The metrics and benchmarks used in storage performance evaluation are discussed. The technology trends taking place in storage systems, such as disk and tape evolution, disk arrays, and solid-state disks, are highlighted. The current popular I/O benchmarks are then described, reviewed, and run on three systems: a DECstation 5000/200 running the Sprite Operating System, a SPARCstation 1+ running SunOS, and an HP Series 700 (Model 730) running HP-UX. Two approaches to storage benchmarks-LADDIS and a self-scaling benchmark with predicted performance-are also described 相似文献
124.
Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10-9 bit error rate (BER) 相似文献
125.
C. Fallnich B. Ruffing Th. Herrmann A. Nebel R. Beigang R. Wallenstein 《Applied physics. B, Lasers and optics》1995,60(5):427-436
We report on a cw mode-locked non-critically phase matched KTP optical parametric oscillator synchronously pumped by a picosecond Ti:Sapphire laser. High average signal output power of up to 950 mW over a large tuning range has been achieved. For this OPO the influence of resonator-length detuning on the output power, pulse duration and spectral bandwidth has been investigated. The measured data are in good agreement with the results of a numerical simulation using a split-step Fourier method which considers the group-velocity mismatch, the group-velocity dispersion and the self-phase modulation. The numerical simulation also describes the measured strong pump depletion and its influence on the OPO output and efficiency. 相似文献
126.
A process-inherent NAND2 device is presented for a three-dimensional CMOS integration with epitaxial lateral overgrowth and chemo-mechanical polishing. The required 'OR' function of the two PMOS transistors is achieved by one silicon volume, which is controlled by a back gate and a conventional front gate. Almost symmetrical characteristics are measured for the front and the back gates.<> 相似文献
127.
Kasukawa A. Namegaya T. Fukushima T. Iwai N. Kikuta T. 《Quantum Electronics, IEEE Journal of》1993,29(6):1528-1535
The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm 2 was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure 相似文献
128.
This investigation focuses on the correlation between the crystallographic orientation of grains with respect to magnetic
properties in Co-Cr films. Based on a distribution measured for the (0002) crystallographic pole densities, modified formulae
describing the texture were used to calculate the coercivity Hc, the squareness ratio Rs (Mr⊥/TMs) and the anisotropy field
Ha for Co-Cr films. In general, calculated values for the coercive force He agreed well with the measured values. The calculated
Rs⊥. values were much larger than the measured ones, however, indicating that the influence of the demagnetizing field and
the magnetostriction on the orientation of the magnetization cannot be neglected.
On leave from Institute of Computing Technology, Academia Sinica, P.O.Box 2704-6, Beijing, P.R. China. 相似文献
129.
Bouillet E. Mitra D. Ramakrishnan K.G. 《Selected Areas in Communications, IEEE Journal on》2002,20(4):691-699
The paper proposes a structure for quality-of-service (QoS)-centered service level agreements (SLA), and a framework for their real-time management in multiservice packet networks. The SLA is structured to be fair to both parties, the service provider and their customer. The SLA considered here are for QoS assured delivery of aggregate bandwidth from ingress to egress nodes; however, the control and signaling is for the more granular flows or calls. A SLA monitoring scheme is presented in which revenue is generated by the admission of flows into the network, and penalty incurred when flows are lost in periods when the service provider is not SLA compliant. In the SLA management scheme proposed, the results of a prior off-line design are used, in conjunction with measurements taken locally at ingress nodes, to classify the loading status of routes. The routing and resource management are based on virtual partitioning and its supporting mechanism of bandwidth protection. The effectiveness of SLA management is measured by the robustness in performance in the presence of substantial diversity in actual traffic conditions. A simulation testbed called D'ARTAGNAN has been built from which we report numerical results for a case study. The results show that the SLA management scheme is robust, fair and efficient over a broad range of traffic conditions 相似文献
130.
Zhengmao Ye Campbell J.C. Zhonghui Chen Eui-Tae Kim Madhukar A. 《Quantum Electronics, IEEE Journal of》2002,38(9):1234-1237
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W. 相似文献