Modeling of a constant Voltage transformer

This paper presents a comprehensive nonlinear model of the controlled constant voltage transformer also known as the ferroresonant transformer. Saturation is a normal mode of operation for this device. This paper derives an equivalent electrical circuit that relates to the physical structure of a typical design. The level of detail includes winding resistances, continuously nonlinear magnetizing inductances, tapped windings, and leakage inductances. The paper describes methods to extract the winding resistances, leakage inductances, and hysteresis loops of the transformer and how to fit the latter into single-valued nonlinear functions. The paper compares computer simulation results of the model with those obtained analytically and experimentally. The results show that the derived circuit will be very useful for designers of the ferroresonant transformer, which is used in uninterruptible power supplies.     

Steady-state operation of a high-voltage multiresonant converter in a high-temperature environment

Often scientific instruments on exploratory satellites are used to collect cosmic particles. These instruments, such as the Faraday cup, require a high-voltage regulated power source. On the proposed solar probe satellite there will be instruments which will collect cosmic particles close to the sun. Naturally temperature effects on the voltage regulator are a concern. Specifically power dissipation within the regulator must stay within stringent guidelines. The high-voltage regulator circuit is a resonant flyback topology with a dissipative series switch whose on resistance controls the output voltage level. The extreme temperatures in space will change the inductance of the flyback transformer which will affect the output voltage. State space analysis techniques are used to determine how the value of the transformer inductance and capacitance in the flyback converter affects the output voltage and consequently the power dissipated by the transformer and the switch. The accuracy of the analysis is verified by comparing results with those obtained from an experimental circuit. The results can then be used to help the designer chose nominal capacitance and inductance values that will work over the temperature range of interest.     

Wavelength-tunable 40-GHz picosecond harmonically mode-locked fiber laser source

We demonstrate a novel 40-GHz mode-locked fiber laser that utilizes a single active device to provide both gain and mode-locking. The laser produces pulses as short as 2.2 ps, is tunable over a 27-nm band centered at 1553 nm, and exhibits long-term stability without cavity-length feedback control. The pulse train at 1556 nm was used in a 40-Gb/s transmission experiment over 45 km with a low 0.4-dB power penalty.     

Joint scheduling and power control supporting multicasting in wireless ad hoc networks

This paper addresses the problem of power control in a multihop wireless network supporting multicast traffic. We face the problem of forwarding packet traffic to multicast group members while meeting constraints on the signal-to-interference-plus-noise ratio (SINR) at the intended receivers. First, we present a distributed algorithm which, given the set of multicast senders and their corresponding receivers, provides an optimal solution when it exists, which minimizes the total transmit power. When no optimal solution can be found for the given set of multicast senders and receivers, we introduce a distributed, joint scheduling and power control algorithm which eliminates the weak connections and tries to maximize the number of successful multicast transmissions. The algorithm allows the other senders to solve the power control problem and minimize the total transmit power. We show that our distributed algorithm converges to the optimal solution when it exists, and performs close to centralized, heuristic algorithms that have been proposed to address the joint scheduling and power control problem.     

Analogue switch for very low-voltage applications

A new analogue switch suitable for operation at very low-voltage supply in a standard CMOS technology is presented. The proposed switch is based on 'quasi-floating-gate' transistors and has a simple and compact structure. For illustrative purposes, two sample-and-hold circuits operating from a single supply voltage close to the threshold voltage of a transistor, and using the proposed technique, are presented. Experimental results obtained from prototypes in a 1.5 /spl mu/m CMOS technology are provided.     

An investigation of sugar extraction methods and the use of microwave power for date syrup processing: efficiency and color related considerations.

This study investigates the effect of extraction methods on the color of date syrup and the potential use of microwave power for syrup processing. Sugar solutions were extracted from dates by boiling, soaking and blending. Color and sugar content of the extracted solutions were measured, and the percentage of sugar extracted form the total fruit sugar determined. Boiling was found to be the most efficient method of extraction whereby 74% of total samples sugar was extracted. In contrast, only 54.2% of fruit sugar was extracted by blending and 42% by soaking. In addition, solutions extracted by soaking and blending had a foaming problem in the subsequent concentration process. The extraction method had no effect on the product final color. The extracted solution was concentrated using two heating methods: conventional and microwave heating at a 600 W capacity and a frequency of 2450 MHz applied at three power levels: 10, 7, and 6. In the heating process, 180 minutes were needed to achieve a 77% degrees Brix using convective heating, while it took 81, 138, and 166 minutes of microwave heating at power level 10, 7, and 6, respectively to achieve the same concentration. Water activity of the syrup was measured within a sugar content range of 50 to 80% degrees Brix and the sugar concentration at which the product is shelf stable was determined at 76%.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

A left-handed composite medium based on waveguiding structures with a bianisotropic filling

A new composite medium based on waveguiding structures loaded with bianisotropic gratings of planar double split rings (PDSRs) and planar helices is considered. The microwave transmission spectra of this medium are studied experimentally. The effective parameters of the medium are determined theoretically, and its passbands are investigated. The characteristics of the medium are compared to those of infinite homogeneous bianisotropic media. A relationship between the spectral transmission characteristics and the type of resonance excitation is established. The transparency bands and overforbidden bands of the composite medium are revealed. The combinations of the medium’s effective parameters that correspond to these bands are determined. It is shown that the transparency bands where the medium is characterized simultaneously by negative permittivity and negative permeability can be identified.     

Electrical and photoelectric properties of electrochemically fabricated SnO2/Cd0.4Zn0.6S/CdTe solar cells

Solar cells based on SnO₂/Cd_0.4Zn_0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I _sc ≈ 21.2 mA/cm², U _oc ≈ 813 mV, and η = 14.7%).