A channel model for characterization of the error data recoveredfrom compact discs

The data recovered from compact discs are contaminated with errors that exhibit a bursty behavior. A channel model is developed to characterize the error bursts and good-data gaps that occur in actual data recovered from compact discs. The probability of having m erroneous symbols in a data block of length n symbols is calculated using the channel model. This probability can be used to evaluate the performance of the error-correction code (ECC) used in the compact disc system     

On practical metrology and chemical analysis: etalons and traceability systems

 National measurement systems are infrastructures to ensure, for each nation, a consistent and internationally recognised basis for measurement. Such complex systems have historical, technical, legal, organisational and institutional aspects to connect scientific metrology with practical measurements. Underlying any valid measurement is a chain of comparisons linking the measurement to an accepted standard. The ways the links are forged and the etalons (measurement standards) to which they connect are defining characteristics of all measurement systems. This is often referred to as traceability which aims at basing measurements in common measurement units – a key issue for the integration of quantitative chemical analysis with the evolving physical and engineering measurement systems. Adequate traceability and metrological control make possible new technical capabilities and new levels of quality assurance and confidence by users in the accuracy and integrity of quantitative analytical results. Traceability for chemical measurements is difficult to achieve and harder to demonstrate. The supply of appropriate etalons is critical to the development of metrology systems for chemical analysis. An approach is suggested that involves the development of networks of specialised reference laboratories able to make matrix-independent reference measurements on submitted samples, which may then be used as reference materials by an originating laboratory using its practical measurement procedures. Received: 31 July 1995 Accepted: 19 August 1995     

Pulse radar reflectometry for fusion plasma diagnostics

A basic principle of pulse radar reflectometry is considered in this paper. A numerical analysis is performed in order to study errors appearing due to the expansion of a microwave pulse reflected from the plasma. A block diagram of the basic pulse radar scheme and its overall performance is presented. The first experimental results obtained on T11-M tokamak are discussed. An improved pulse radar scheme with cross-detection is considered. The results of bench test experiments and future applications of this scheme are discussed.     

ACT3: a high-speed, high-precision electrical impedance tomograph

Presents the design, implementation, and performance of Rensselaer's third-generation adaptive current tomograph, ACT3. This system uses 32 current sources and 32 phase-sensitive voltmeters to make a 32-electrode system that is capable of applying arbitrary spatial patterns of current. The instrumentation provides 16 b precision on both the current values and the real and reactive voltage readings and can collect the data for a single image in 133 ms. Additionally, the instrument is able to automatically calibrate its voltmeters and current sources and adjust the current source output impedance under computer control. The major system components are discussed in detail and performance results are given. Images obtained using stationary agar targets and a moving pendulum in a phantom as well as in vivo resistivity profiles showing human respiration are shown     

Excitation loss of open resonators

Reported here are the results on level and structure of the radiated field of an open resonator at and off resonance. On the basis of the modelling problem rigorous solution and the measurements at 4-millimeter wavelength we find there are no ways to compensate the radiated field from an open electromagnetic structure at resonance. Analysis of open resonator excitation efficiency shows that the mismatch loss of a slot-fed open resonator runs to 34% while at the aperture-feed excitation this is not more than 6% for the same-geometry resonator.     

Deep submicron CMOS based on silicon germanium technology

The advantages to be gained by using SiGe in CMOS technology are examined, Conventional MOSFETs are compared with SiGe heterojunction MOSFETs suitable for CMOS technology and having channel lengths between 0.5 and 0.1 μm. Two-dimensional computer simulation demonstrates that the improved mobility in the SiGe devices, due to higher bulk mobility and the elimination of Si/SiO₂ interface scattering by the inclusion of a capping layer, results in significant velocity overshoot close to the source-end of the channel. The cut-off frequency, f_t , is found to increase by around 50% for n-channel devices while more than doubling for p-channel devices for typical estimates of mobility. The results offer the prospect of a more balanced CMOS and improved circuit speed especially when using dynamic logic     

Erratum: Synthesis and characterization of diorganotin(IV) complexes of Schiff bases with ONO‐type donors and crystal structure of [N‐(2‐hydroxy‐4‐nitrophenyl)‐3‐ethoxysalicylideneiminato]diphenyltin(IV)

The article referenced above was first published online on 30 August 2007 with incorrect pagination; the pagination has now been corrected online and in print. Copyright © 2007 John Wiley & Sons, Ltd.     

Microstructural evolution of decagonal quasicrystal in the undercooled Al72Ni12Co16 alloy melts

The microstructure evolution of decagonal quasicrystals in Al₇₂Ni₁₂Co₁₆ alloy was investigated by the electromagnetic melting and cyclic superheating method. Single-phase decagonal quasicrystals have been obtained when the undercoolings were larger than 60 K. The decagonal quasicrystals formed at various undercoolings show different microstructural morphologies. Furthermore, grain refinement was found near the undercooling of 120 K. Based on current thermodynamic and dendrite growth theories, a dimensionless superheating parameter was adopted to explain the effect of processing conditions on the microstructure of Al₇₂Ni₁₂Co₁₆ alloy. The result indicate that the fine equiaxied microstructure of decagonal quasicrystal (D-phase) formed near on undercooling of 120 K originates from the break-up of dendrites.     

Application of N,N‐bis(diphenylphosphino)aniline palladium(II) complexes as pre‐catalysts in Heck coupling reactions

Palladium(II) complexes with N,N‐bis(diphenylphosphino)aniline ligands catalyse the Heck reaction between styrene and aryl bromides, affording stilbenes in good yield. The structures of two of the complexes used as pre‐catalysts have been determined by single‐crystal X‐ray diffraction. Copyright © 2007 John Wiley & Sons, Ltd.     

Solution-Processed n-Type Organic Field-Effect Transistors With High on /off Current Ratios Based on Fullerene Derivatives

Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2- thienylethoxycarbonyl)-propyl)-{5}-l-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 x 10^-2 cm²/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The ON/OFF ratios reported in this letter, which are in the range of 10⁵ -10⁶, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP.