An analytical model for I-V and small-signalcharacteristics of planar-doped HEMTs

An analytical current-voltage (I-V) model for planar-doped HEMTs is developed. This compact model covers the complete range of I-V characteristics, including the current saturation region and parasitic conduction in the electron-supplying layer. Analytical expressions for the small-signal parameters and current-gain cutoff frequency are derived from the I-V model. Modeling results for a 0.1-μm-gate planar-doped AlInAs-GaInAs HEMT show excellent agreement with measured characteristics. Threshold voltages and parasitic conduction in planar-doped and uniformly doped HEMTs are also compared and discussed     

Tunable circular patch antennas

A method to control the resonant or operating frequencies of circular patch antennas has been investigated experimentally and theoretically. It consists of the placement of passive metallic or tuning posts at approximate locations within the input region of the antenna. Comparison of measured and analytical results seems to establish the validity of a theoretical model proposed to determine the input performance of such circular patch antennas.     

Phasing of three vircators simulated in terms of coupled van der Pol oscillators

Phase synchronization in a system of three virtual-cathode microwave oscillators (vircators) simulated by coupled van der Pol oscillators is studied. The phasing dynamics of the vircators is visualized with the phase portraits of the system in the triangular coordinates. Different phasing conditions are found.     

Fundamental aspects of initiated oxidation of tridecane and polyethylene in solutions

Specific features of the initiated oxidation of polyethylene and its low-molecular-weight analogue tridecane, associated with the occurrence of the process in the short-chain mode, were studied.     

Cosmic γ-ray bursts: Observations and modeling

It is now commonly accepted that cosmic γ-ray bursts (GRBs) are of cosmological origin. This conclusion is based on the statistical analysis of GRBs and the measurements of line redshifts in GRB optical afterglows, i.e., in the so-called long GRBs. In this review, the models of radiation and models of GRB sources are considered. In most of these models, if not in all of them, the isotropic radiation cannot provide the energy release necessary for the appearance of a cosmological GRB. No correlation is noted between the redshift, the GRB-spectrum shape, and the total detected energy. The comparison between data obtained in the Soviet experiment KONUS and the American experiment BATSE shows that they substantially differ in statistical properties and the detection of hard x-ray lines. The investigation of hard gamma (0.1–10 GeV) afterglows, the measurement of prompt optical spectra during the GRB detection, and the further investigation of hard x-ray lines is of obvious importance for gaining insight into the GRB origin. Observations of two bright optical GRB afterglows point to the fact that an initially bright optical flare is directly related to the GRB itself, and the subsequent weak and much more continuous optical radiation is of a different nature. The results of observations of optical GRB afterglows are discussed. They point to the fact that the GRBs originate in distant galaxies with a high matter density, where intense star formation takes place. The interaction of the cosmological GRB radiation with a dense surrounding molecular cloud results in the appearance of long-duration (up to 10 years) weak optical afterglows associated with the heating and reradiation of gas. Results of 2D numerical simulation of the heating and reradiation of gas in various variants of the relative disposition of GRB and molecular clouds are presented. In conclusion, the possible relation between the so-called short GRBs and recurrent sources of soft γ rays in our Galaxy, the so-called “soft gamma repeaters,” is discussed.     

Breakdown behavior of GaAs/AlGaAs HBTs

Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs HBT (heterojunction bipolar transistor) has been studied. Junction breakdown characteristics displaying hard breakdown, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized microplasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and used to investigate breakdown uniformity. Using a simple punchthrough breakdown model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from devices displaying the most uniform junction breakdown. The serious current gain degradation of GaAs/AlGaAs HBTs at low current densities was analyzed in connection with the measurement of a large collector-emitter breakdown voltage. The unexpected functional relationship between the collector-emitter breakdown voltage and collector-base breakdown voltage is explained by the absence of a hole-feedback effect for devices not exhibiting transistor action     

Elektrische Charakterisierung von Hochfrequenz-Niederdruck-Gasentladungen

In recent years there has emerged significant interest in low pressure radio frequency (rf) glow discharges which are used widely particulary in IC fabrication. Various parameters of the rf glow discharge have been found to be useful for its electrical characterization; however, there is no uniformity and agreement. Extensive experimental investigations on various discharge systems have shown, that the self-bias on the rf driven electrode, the complex conductivity and the breakdown characteristic are preferable parameters of rf discharges. Advantageously the self-bias and the complex conductivity should be presented in dependence on the pressure and the applied rf voltage. The discharge current cannot be measured quite accurately due to currents via leaky capacitors and the deviations from a sinusoidal form of the current due to nonlinearities.