Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs     

Selective quenching of tryptophanyl fluorescence in bovine serum albumin by the iodide ion

Modified Stern-Volmer equation is obeyed by bovine serum albumin (BSA)-iodide system showing selective quenching of tryptophanyl fluorescence of BSA. The fraction of accessible protein fluorescence is 0.56 and the effective Stern-Volmer constant is 290 M^-1 at pH 7.4 in 0.005 M phosphate buffer at 25°C. Collisional quenching is operative both in the BSA -I⁻¹ system and the model system, tryptophan-I⁻¹. It is supported by the observed relationship between the ratio of quenching rate constants (k _q ) and diffusion coefficients and alsok _q with bulk viscosity.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

EPMA of interfaces applied to the solid oxide fuel cell

Chemical interactions at the phase boundaries of materials applied for the solid oxide fuel cell (SOFC) have been studied by EPMA. The chemical reactivity at the interface of La_y-xSr_xMnO₃/ZrO₂-Y₂O₃ is dependent on the stoichiometry (y) and the Sr content (x) of the perovskite. Typical reaction products (zirconates) and a diffusion zone in the ZrO₂–Y₂O₃ have been observed. The extension of cation release (Mn) is related to the increasing chemical activity of Mn oxide in the perovskite by the Sr substitution for La. The wettability of the metal/oxide interface in the anode cermet (Ni/ZrO₂–Y₂O₃) has been found to be influenced by chemical reactions resulting from the applied reducing atmosphere with high carbon activity. The disintegration of ZrO₂–Y₂O₃ in contact with molten Ni or Ni-Ti and Ni-Cr alloys leads to the redeposition of Y₂O₃-enriched oxides and also to Zr-rich intermetallic compounds and eutectics.     

Packed hyper-ellipsoid classifiers

Pattern classification is frequently performed using the k-nn algorithm or a neural network. The choice of parameters for the former is often difficult and the amount of data which has to be stored in the classifier can be high. Neural network classifiers can overcome some of these problems but learning is often unreliable and slow. An alternative which combines some of the best features of the k-nn and neural network classifier is described by the authors. The classifier is called a packed hyper-ellipsoid classifier     

Vector algorithm for Reed-Muller expansions

A novel vector algorithm for Reed-Muller (RM) expansions is proposed which can save as many as a factor of 2^n-1 memory elements compared with previous matrix algorithms     

Disparity field and depth map coding for multiview 3D image generation

In the present paper techniques are examined for the coding of the depth map and disparity fields for stereo or multiview image communication applications. It is assumed that both the left and right channels of the multiview image sequence are coded using block- or object-based methods. A dynamic programming algorithm is used to estimate a disparity field between each stereo image pair. Depth is then estimated and occlusions are optionally detected, based on the estimated disparity fields. Spatial interpolation techniques are examined based on the disparity/depth information and the detection of occluded regions using either stereoscopic or trinocular camera configurations. It is seen that the presence of a third camera at the transmitter site improves the estimation of disparities, the detection of occlusions and the accuracy of the resulting spatial interpolation at the receiver. Various disparity field and depth map coding techniques are then proposed and evaluated, with emphasis given to the quality of the resulting intermediate images at the receiver site. Block-based and wireframe modeling techniques are examined for the coding of isolated depth or disparity map information. Further, 2D and 3D motion compensation techniques are evaluated for the coding of sequences of depth or disparity maps. The motion fields needed may be available as a byproduct of block-based or object-based coding of the intensity images. Experimental results are given for the evaluation of the performance of the proposed coding and spatial interpolation methods.     

Baseband Volterra filters for implementing carrier basednonlinearities

A diagonal coordinate representation for Volterra filters is developed and exploited to derive efficient Volterra filter implementations for processing carrier based input signals. In the diagonal coordinate representation, the output is expressed as a sum of linear filters applied to modified input signals. Hence, linear filtering methods are employed to implement the nonlinear filter on a baseband version of the input. Downsampling is then used to reduce computational complexity. The same approach is employed to develop efficient implementations for processing continuous-time carrier-based signals, pulse amplitude-modulated signals, and frequency division multiplexed input signals     

Buffering packetised data: an examination of the crossover effect

Buffer analysis has traditionally relied heavily on the use of traffic models with short range (exponentially decaying) autocorrelation, e.g. Poisson and Markov modulated Poisson processes. Recent literature has suggested the presence of traffic with slowly (hyperbolically) decaying autocorrelation functions; these sources collectively and individually seem to be exhibiting the phenomenon of long range dependence (LRD). Furthermore, it has been claimed that this sort of traffic may exhibit behaviour, when buffered, that is advantageous in that a smaller buffer may be required than would be the case with non-LRD traffic. This phenomenon has been named the crossover effect, and the authors quantify its relevance to ATM networking, using simulation studies of a homogenous mix of chaotic sources. These show that there is a crossover effect, but the key finding is that this effect is much nearer to a buffer length of zero than was predicted by previous theoretical studies, actually occurring at a value so low that it has no practical significance     

Modeling of current-voltage characteristics for strained andlattice matched HEMT's on InP substrate using a variational chargecontrol model

A model for the calculation of the current-voltage characteristics of strained In_0.52Al_0.48As/In_xGa_1-xAs on InP substrate High Electron Mobility Transistors (HEMT's), based on a variational charge control model, is presented. A polynomial fit of the two-dimensional electron gas (2DEG) density is used for the calculation of the current-voltage characteristics. The effect of strain is introduced into the 2DEG density versus gate voltage relation. Very good agreement between the calculated and measured I-V characteristics was obtained. In addition, our results show that, for an indium mole fraction of the In_xGa_1-xAs channel in the range 0.53-0.60, increasing the indium mole fraction lowers the threshold voltage and hence increases the drain current at the same gate bias