On nonspecular “total internal reflection” of powerful electromagnetic waves

It is shown that the nonstable character of nonlinear interaction of a system of waves similar to that resulting from double stimulated Brillouin scattering is retained upon the oblique incidence of a powerful electromagnetic wave on a layer of supercritical plasma. In this case we have nonlinear back reflection from a layer of supercritical plasma. The threshold intensity of the pump wave is greater than that in the case of subcritical plasma for TE polarization waves but can markedly decrease for waves polarized in the incidence plane. Instability is possible only for a layer of finite thickness.Radiophysical Research Institute, Nizhny Novgorod. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 38, Nos. 3–4, pp. 298–303, March–April, 1995.     

Multiterminal light-emitting logic device electricallyreprogrammable between OR and NAND functions

A monolithic multiterminal logic device that functions both optically and electrically as an ORNAND gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in an InGaAs/InAlAs/InGaAs heterostructure grown by molecular beam epitaxy. Excellent performance is obtained at room temperature. The collector current and the optical output power both exhibit the OR and the NAND functions of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal     

Optical detection of NO3 and NO2 in “pure” HNO3 vapor,the liquid-phase decomposition of HNO3

Flowing and static gas-phase samples of HNO₃ in O₂ and N₂ were analyzed by long-path ultraviolet/visible (UV/VIS) spectroscopy to reveal the presence of both NO₂ and NO₃, the concentrations of which were calculated using differential absorption cross sections. NO₂ is produced predominantly by the heterogeneous decomposition of HNO₃, whereas NO₃ is generated in the gas phase by the thermal decomposition of N₂O₅, a product of the self-disproportionation of liquid HNO₃. © 1993 John Wiley & Sons, Inc.     

Sensorless speed measurement using current harmonic spectralestimation in induction machine drives

This paper proposes a sensorless speed measurement scheme that improves the performance of transducerless induction machine drives, especially for low-frequency operation. Speed-related harmonics that arise from rotor slotting and eccentricity are analyzed using digital signal processing. These current harmonics exist at any nonzero speed and are independent of time-varying parameters, such as stator winding resistance. A spectral estimation technique combines multiple current harmonics to determine the rotor speed with more accuracy and less sensitivity to noise than analog filtering methods or the fast Fourier transform. An on-line initialization routine determines machine-specific parameters required for slot harmonic calculations. This speed detector, which has been verified at frequencies as low as 1 Hz, can provide robust, parameter-independent information for parameter tuning or as an input to a sensorless flux observer for a field-oriented drive. The performance of the algorithm is demonstrated over a wide range of inverter frequencies and load conditions     

A prototype 3D optically interconnected neural network

We report the implementation of a prototype three-dimensional (3D) optoelectronic neural network that combines free-space optical interconnects with silicon-VLSI-based optoelectronic circuits. The prototype system consists of a 16-node input, 4-neuron hidden, and a single-neuron output layer, where the denser input-to-hidden-layer connections are optical. The input layer uses PLZT light modulators to generate optical outputs which are distributed over an optoelectronic neural network chip through space-invariant holographic optical interconnects. Optical interconnections provide negligible fan-out delay and allow compact, purely on-chip electronic H-tree type fan-in structure. The small prototype system achieves a measured 8-bit electronic fan-in precision and a calculated maximum speed of 640 million interconnections per second. The system was tested using synaptic weights learned off system and was shown to distinguish any vertical line from any horizontal one in an image of 4×4 pixels. New, more efficient light detector and small-area analog synapse circuits and denser optoelectronic neuron layouts are proposed to scale up the system. A high-speed, feed-forward optoelectronic synapse implementation density of up to 10⁴/cm² seems feasible using new synapse design. A scaling analysis of the system shows that the optically interconnected neural network implementation can provide higher fan-in speed and lower power consumption characteristics than a purely electronic, crossbar-based neural network implementation     

A new erasing method for a single-voltage long-endurance flashmemory

A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles     

Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs     

Selective quenching of tryptophanyl fluorescence in bovine serum albumin by the iodide ion

Modified Stern-Volmer equation is obeyed by bovine serum albumin (BSA)-iodide system showing selective quenching of tryptophanyl fluorescence of BSA. The fraction of accessible protein fluorescence is 0.56 and the effective Stern-Volmer constant is 290 M^-1 at pH 7.4 in 0.005 M phosphate buffer at 25°C. Collisional quenching is operative both in the BSA -I⁻¹ system and the model system, tryptophan-I⁻¹. It is supported by the observed relationship between the ratio of quenching rate constants (k _q ) and diffusion coefficients and alsok _q with bulk viscosity.     

EPMA of interfaces applied to the solid oxide fuel cell

Chemical interactions at the phase boundaries of materials applied for the solid oxide fuel cell (SOFC) have been studied by EPMA. The chemical reactivity at the interface of La_y-xSr_xMnO₃/ZrO₂-Y₂O₃ is dependent on the stoichiometry (y) and the Sr content (x) of the perovskite. Typical reaction products (zirconates) and a diffusion zone in the ZrO₂–Y₂O₃ have been observed. The extension of cation release (Mn) is related to the increasing chemical activity of Mn oxide in the perovskite by the Sr substitution for La. The wettability of the metal/oxide interface in the anode cermet (Ni/ZrO₂–Y₂O₃) has been found to be influenced by chemical reactions resulting from the applied reducing atmosphere with high carbon activity. The disintegration of ZrO₂–Y₂O₃ in contact with molten Ni or Ni-Ti and Ni-Cr alloys leads to the redeposition of Y₂O₃-enriched oxides and also to Zr-rich intermetallic compounds and eutectics.