A fractal model of reinforcement of elastoplastic nanocomposites

Within the framework of fractal analysis and percolation theory, an alternative model of reinforcement of filled polymers is offered. Practically, this model can be used only to describe the reinforcement of nanocomposites, because, according to the treatment considered, a pronounced reinforcement can be reached only at ratios of filler particle diameter to the statistical segment length of about 10 and less. A theoretical calculation showed a good qualitative and quantitative agreement with experiments. The type of reinforcement mechanism of composites is determined by the type of the space (fractal or Euclidean) in which the structure of the polymeric matrix is formed. __________ Translated from Mekhanika Kompozitnykh Materialov, Vol. 42, No. 6, pp. 797–802, November–Decem ber, 2006.     

Analysis of the Survivability of GaN Low-Noise Amplifiers

This paper presents a detailed analysis of the stressing mechanisms for highly rugged low-noise GaN monolithic-microwave integrated-circuit amplifiers operated at extremely high input powers. As an example, a low-noise amplifier (LNA) operating in the 3-7-GHz frequency band is used. A noise figure (NF) below 2.3 dB is measured from 3.5 to 7 GHz with NF<1.8 dB between 5-7 GHz. This device survived 33 dBm of available RF input power for 16 h without any change in low-noise performance. The stress mechanisms at high input powers are identified by systematic measurements of an LNA and a single high electron-mobility transistor in the frequency and time domains. It is shown that the gate dc current, which occurs due to self-biasing, is the most critical factor regarding survivability. A series resistance in the gate dc feed can reduce this gate current by feedback, and may be used to improve LNA ruggedness     

Breakdown behavior of GaAs/AlGaAs HBTs

Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs HBT (heterojunction bipolar transistor) has been studied. Junction breakdown characteristics displaying hard breakdown, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized microplasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and used to investigate breakdown uniformity. Using a simple punchthrough breakdown model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from devices displaying the most uniform junction breakdown. The serious current gain degradation of GaAs/AlGaAs HBTs at low current densities was analyzed in connection with the measurement of a large collector-emitter breakdown voltage. The unexpected functional relationship between the collector-emitter breakdown voltage and collector-base breakdown voltage is explained by the absence of a hole-feedback effect for devices not exhibiting transistor action     

Cyclization of N-alkyl azinium cations with bifunctional nucleophiles. 21. Regioisomeric 1,3,4-thiadiazino[5,6-b]quinoxalines

Thiobenzhydrazides undergo cyclization with N-alkyl-quinoxalinium salts to give 5-alkyl-substituted 1,4,4a,5,10,10a-hexahydro-1,3,4-thiadiazino[5,6-b]quinoxalines, which undergo isomerization to 10-alkyl-substituted thiadiazinoquinoxalines when they are heated in ethanol or in the presence of acids.See [1] for Communication 20.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 4, pp. 557–561, April, 1987.     

Elektrische Charakterisierung von Hochfrequenz-Niederdruck-Gasentladungen

In recent years there has emerged significant interest in low pressure radio frequency (rf) glow discharges which are used widely particulary in IC fabrication. Various parameters of the rf glow discharge have been found to be useful for its electrical characterization; however, there is no uniformity and agreement. Extensive experimental investigations on various discharge systems have shown, that the self-bias on the rf driven electrode, the complex conductivity and the breakdown characteristic are preferable parameters of rf discharges. Advantageously the self-bias and the complex conductivity should be presented in dependence on the pressure and the applied rf voltage. The discharge current cannot be measured quite accurately due to currents via leaky capacitors and the deviations from a sinusoidal form of the current due to nonlinearities.