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81.
A monolithic multiterminal logic device that functions both optically and electrically as an ORNAND gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in an InGaAs/InAlAs/InGaAs heterostructure grown by molecular beam epitaxy. Excellent performance is obtained at room temperature. The collector current and the optical output power both exhibit the OR and the NAND functions of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal  相似文献   
82.
Flowing and static gas-phase samples of HNO3 in O2 and N2 were analyzed by long-path ultraviolet/visible (UV/VIS) spectroscopy to reveal the presence of both NO2 and NO3, the concentrations of which were calculated using differential absorption cross sections. NO2 is produced predominantly by the heterogeneous decomposition of HNO3, whereas NO3 is generated in the gas phase by the thermal decomposition of N2O5, a product of the self-disproportionation of liquid HNO3. © 1993 John Wiley & Sons, Inc.  相似文献   
83.
This paper proposes a sensorless speed measurement scheme that improves the performance of transducerless induction machine drives, especially for low-frequency operation. Speed-related harmonics that arise from rotor slotting and eccentricity are analyzed using digital signal processing. These current harmonics exist at any nonzero speed and are independent of time-varying parameters, such as stator winding resistance. A spectral estimation technique combines multiple current harmonics to determine the rotor speed with more accuracy and less sensitivity to noise than analog filtering methods or the fast Fourier transform. An on-line initialization routine determines machine-specific parameters required for slot harmonic calculations. This speed detector, which has been verified at frequencies as low as 1 Hz, can provide robust, parameter-independent information for parameter tuning or as an input to a sensorless flux observer for a field-oriented drive. The performance of the algorithm is demonstrated over a wide range of inverter frequencies and load conditions  相似文献   
84.
85.
A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles  相似文献   
86.
A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O2 anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs  相似文献   
87.
Modified Stern-Volmer equation is obeyed by bovine serum albumin (BSA)-iodide system showing selective quenching of tryptophanyl fluorescence of BSA. The fraction of accessible protein fluorescence is 0.56 and the effective Stern-Volmer constant is 290 M-1 at pH 7.4 in 0.005 M phosphate buffer at 25°C. Collisional quenching is operative both in the BSA -I−1 system and the model system, tryptophan-I−1. It is supported by the observed relationship between the ratio of quenching rate constants (k q ) and diffusion coefficients and alsok q with bulk viscosity.  相似文献   
88.
Chemical interactions at the phase boundaries of materials applied for the solid oxide fuel cell (SOFC) have been studied by EPMA. The chemical reactivity at the interface of Lay-xSrxMnO3/ZrO2-Y2O3 is dependent on the stoichiometry (y) and the Sr content (x) of the perovskite. Typical reaction products (zirconates) and a diffusion zone in the ZrO2–Y2O3 have been observed. The extension of cation release (Mn) is related to the increasing chemical activity of Mn oxide in the perovskite by the Sr substitution for La. The wettability of the metal/oxide interface in the anode cermet (Ni/ZrO2–Y2O3) has been found to be influenced by chemical reactions resulting from the applied reducing atmosphere with high carbon activity. The disintegration of ZrO2–Y2O3 in contact with molten Ni or Ni-Ti and Ni-Cr alloys leads to the redeposition of Y2O3-enriched oxides and also to Zr-rich intermetallic compounds and eutectics.  相似文献   
89.
A novel vector algorithm for Reed-Muller (RM) expansions is proposed which can save as many as a factor of 2n-1 memory elements compared with previous matrix algorithms  相似文献   
90.
An OFDM scheme with a half complexity   总被引:2,自引:0,他引:2  
The paper deals with an OFDM (orthogonal frequency division multiplexing) system based on filter-bank architecture. The known implementation uses a DFT (discrete Fourier transform) processor and a polyphase network (PPN). Even if it is based on complex components, in the final step it operates the real part extraction of the incoming signal. This leads to redundant operations in the DFT processor and in the PPN. Specifically, for the transmission of N complex symbol sequences at a given rate ½F, an N-point DFT processor and an N-branch PPN, both working at the rate F, are required. This implementation can be improved with a complexity reduction by a factor of two. In fact, in the paper an architecture is presented based on an N-point DFT processor and N-branch PPN at the rate F, for the transmission of 2N (in place of N) complex symbol sequences at the rate ½F  相似文献   
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