Synchronisation of hyperchaotic oscillators

The authors present three different examples demonstrating the possibility of synchronising hyperchaotic oscillators via a single variable     

Analysis of course errors on CVOR antennas (including effects ofmutual coupling between elements)

A VHF omnidirectional radio range (VOR) is a navigation aid radio beacon facility, which provides aircraft with azimuth information relative to the VOR station in question as the origin. In Japan, two types of VOR-the conventional type (referred to as a CVOR) and the Doppler type (referred to as a DVOR)-are currently in use. An element known as the Alford loop antenna (ALA), which changes the loading reactance, is used for the VOR because the horizontally polarized wave and nondirectivity in the horizontal plane are preferred. A VOR antenna consists of a carrier antenna and a sideband antenna-an aircraft receives separate signals from these two antennas and compares them to obtain azimuth information. The mutual coupling between the elements forming the carrier and the sideband antenna affects the directivity of the single elements, resulting in errors in azimuth information. With the mutual coupling between the antenna elements being taken into consideration, a quantitative calculation was made by using the moment method-the results of the calculation made it clear that a loading reactance value of -320 Ω is better to make not mutually coupled elements nondirectional while a loading reactance value of -600 Ω is optimum to minimize the azimuth error of a CVOR     

A new erasing method for a single-voltage long-endurance flashmemory

A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles     

Three-dimensional reconstruction of live embryos using roboticmacroscope images

To determine the three-dimensional (3-D) shape of a live embryo is a technically challenging task. The authors show that reconstructions of live embryos can be done by collecting images from different viewing angles using a robotic macroscope, establishing point correspondences between these views by block matching, and using a new 3-D reconstruction algorithm that accommodates camera positioning errors. The algorithm assumes that the images are orthographic projections of the object and that the camera scaling factors are known. Point positions and camera errors are found simultaneously. Reconstructions of test objects and embryos show that meaningful reconstructions are possible only when camera positioning and alignment errors are accommodated since these errors can be substantial. Reconstructions of early-stage axolotl embryos were made from sets of 33 images. In a typical reconstruction, 781 points, each visible in at least three different views, were used to form 1511 triangles to represent the embryo surface. The resulting reconstruction had a mean radius of error of 0.27 pixels (1.1 μm). Mathematical properties of the reconstruction algorithm are identified and discussed     

Method for preventing delay ambiguity

A detection error mechanism termed delay ambiguity is identified as one of the main causes of the irreducible bit error rate observed for data detection over fast fading communication channels. A periodic sequence of phase rotations applied to the phase shift keyed (PSK) transmit data symbols is proposed to prevent this type of detection error     

Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs     

Selective quenching of tryptophanyl fluorescence in bovine serum albumin by the iodide ion

Modified Stern-Volmer equation is obeyed by bovine serum albumin (BSA)-iodide system showing selective quenching of tryptophanyl fluorescence of BSA. The fraction of accessible protein fluorescence is 0.56 and the effective Stern-Volmer constant is 290 M^-1 at pH 7.4 in 0.005 M phosphate buffer at 25°C. Collisional quenching is operative both in the BSA -I⁻¹ system and the model system, tryptophan-I⁻¹. It is supported by the observed relationship between the ratio of quenching rate constants (k _q ) and diffusion coefficients and alsok _q with bulk viscosity.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.