微波吸收法研究Mn,Cu掺杂对ZnS:Mn,Cu光生载流子复合过程的影响

采用微波吸收法，测量了ZnS:Mn,Cu粉末材料受到超短脉冲激光激发后，其光生电子和浅束缚态电子的衰减过程.发现Mn,Cu的浓度对导带电子的寿命有明显的影响，提高掺杂浓度会使光生电子的寿命大大缩短，还研究了掺杂浓度对光致发光强度的影响. 关键词： 发光材料 硫化锌 光电子 微波吸收技术     

Writing Fiber Grating of Different Wavelength Using the Same Phase Mask

Chirped fiber grating was used in dispersion compensator. We tried to use the same phase mask to write fiber grating of different wavelength with two methods to reduce the price of the fiber grating.     

Reactivities of tetraalkyltin complexes toward Pt/HY zeolite

Tetraalkyltin complexes, SnR₄ (R = Me, Et, Pr, Bu) could react with Pt/HY at 193, 243, 273 and 333 K, respectively. The reactions occurred on the surface of the zeolite and the organotin grafted zeolites were characterized in detail. The framework and the microporous structure of the grafted Pt/HY zeolites were retained. However, the modified zeolites showed better size selectivity in the absorption of hydrocarbons.     

GIS中矢量图形的结构分析与VC++中的实现

简要讨论了GIS各类矢量图形元素间的空间拓朴结构及基位置关系 ,并用VC 6 . 0及MFC具体分析了圆弧与多边形区域的相交关系及实现。为利用VC开发专用图形软件提供了有用帮助。     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)     

SiH4激光等离子体内H谱线的线型研究

本文利用OMA-Ⅲ系统测量了脉冲TEA CO_2激光诱发的SiH_4等离子体发光谱内H巴耳末系的H_α、H_β和H_γ线的线型及线宽。通过理论及实验分析,认为这些谱线的主要加宽机制为Stark加宽。由实验线型和理论线型的拟合得到等离子体的电子温度T≈40000K和电子密度N≈10~(17)cm~(-3)。     

机载导弹逼近红外告警系统发展现状

为了有效对付地空、空空导弹威胁、国外在５０年代中期就开始研制红外告警设备。目前已广泛装备部队。综述了导弹逼近红外告警系统发展现状。     

高精度CCD尺寸自动检测系统的光学系统设计

介绍测量精度为±０．００３ｍｍ的ＣＣＤ尺寸检测系统的光学系统设计特点及远心物镜设计原理，并给出了测试结果。     

等距码的对偶距离分布及其性质

本文主要讨论了等距码的对偶距离分布及其性质，然后利用这些性质将［１］中的某些结果推广到ｑ元等距码情形，并得到了其对偶距离分布的递推关系式，最后，本文给出了ｑ元等距码的码字数目的一个上界。     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source