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51.
Zhi‐Yong Huang Jin‐Can Shen Zhi‐Xia Zhuang Xiao‐Ru Wang Frank S. C. Lee 《应用有机金属化学》2004,18(6):255-261
Cinnabar, as one of the most widely used mineral drugs in traditional Chinese medicines, has been proven to have prominent curative effects in clinical use for more than 2000 years. But the safety and toxicity of the drug has been under constant debate in clinic usage. Metallothionein (MT) contains about 30% of cysteine in the molecule, and plays an important detoxification role against heavy metals. In this study, it was used as a biomarker to assess mercurial accumulation in rats fed orally with cinnabar. After feeding rats with cinnabar by gastric gavage at different dosages and at different times, the distribution of heavy metals (including mercury, copper and zinc) and MT was investigated among rat tissues, including liver, kidney, heart, brain, testis and blood. Metals and MT determinations were carried out using inductively coupled plasma mass spectrometry (ICP‐MS) and a modified mercury saturation assay technique respectively. The results indicated that mercury was easily accumulated in the tissues of rats exposed to cinnabar, especially in kidney. For example: at a feeding dosage of 5 g kg?1 (bw) for 4 weeks, the mercury concentrations in kidney were 13, 8.7, 21.6 and 26 times those in liver, testis, brain and heart respectively; and at 2.5 g kg?1 (bw) for 2 weeks, the mercury concentrations in kidney were 21, 2.1, 3 and 21 times those in liver, testis, brain and heart respectively. In addition, mercury in kidney and liver of all cinnabar groups was significantly higher than that of the control group (P < 0.01). A high positive correlation observed between MT concentrations and mercury levels in both liver and kidney (R2 = 0.9299, P < 0.02 for liver; R2 = 0.9923, P < 0.0008 for kidney) indicated that MT could be used as a biomarker for mercury in tissues. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
52.
Oriňák Andrej Arlinghaus Heinrich Frank Vering Guido Justinová Martina Oriňáková Renáta Turčániová L’udmila Halama Maroš 《平面色谱法杂志一现代薄层色谱法》2003,16(1):23-27
JPC – Journal of Planar Chromatography – Modern TLC - Two interfaces have been tested for coupling thin-layer chromatography (TLC) with time-of-flight secondary-ion mass spectrometry... 相似文献
53.
The possibility of creating a time lens, an analogue of the zone plate in X-ray optics, for ultracold neutrons is experimentally demonstrated. The neutron energy was changed by means of a purely quantum effect: the phase modulation of a neutron wave at a variable modulation frequency. The modulator was a phase grating with variable spatial period moving across the neutron beam. 相似文献
54.
Frank N. Proske Madan L. Puri 《Proceedings of the American Mathematical Society》2003,131(9):2937-2944
In this article we prove a strong law of large numbers for Borel measurable nonseparably valued random elements in the case of generalized random sets.
55.
Gortler A. Schwandner A. Christiansen J. Frank K. Tkotz R. 《Electron Devices, IEEE Transactions on》1995,42(11):2021-2027
To avoid the lowering of the holdoff voltage due to the electrode erosion in one stage high current pseudospark switches (PSS), a two stage PSS with no axial aperture in the intermediate electrode was tested. For investigations a pulse generator was used generating peak currents up to 120 kA at a maximum voltage of 30 kV with a period length of 5 μs of a weakly damped sine wave with 90% current reversal. In comparison with a one stage PSS the breakdown characteristic was shifted to higher pressure. With a free floating intermediate electrode, the device could not be triggered, however, with additional capacities of a few nF between the three electrodes the discharge was ignited. The discharge in the second gap is triggered by the pseudospark discharge in the cathode gap, discharging the auxiliary capacities. Simultaneously, observation of both gaps with fast shutter photography showed an independent movement of the discharges in the two gaps. In the cathode gap as current increases, the discharge moves away from the center to the plane electrode surface as has been observed in the one stage PSS. However, in the anode gap the discharge moves away from the center after a contraction to the center. The two discharges are transmitted to metal vapor arc type discharges as the erosion patterns prove. With this kind of a two stage PSS holdoff voltages exceeding 35 kV would be possible. The characteristic switch data, i.e., delay and jitter, are nearly equal to a one stage PSS 相似文献
56.
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58.
Frank Rutz Martin Koch Shilpa Khare Martin Moneke Heike Richter Uwe Ewert 《International Journal of Infrared and Millimeter Waves》2006,27(4):547-556
We report on experiments that evaluate the potential of terahertz (THz) time-domain spectroscopy (TDS) for quality control
of polymeric compounds. We investigate specimens out of a polyethylene compound with silver-coated titanium dioxide nanospheres
and a glass-fiber reinforced epoxy composite. We further examine an industrial polymer product produced by injection molding.
Our data demonstrates that THz imaging is a powerful tool for contactless quality control in the polymer industry. 相似文献
59.
Rupert L. Frank Ari Laptev Elliott H. Lieb Robert Seiringer 《Letters in Mathematical Physics》2006,77(3):309-316
Inequalities are derived for power sums of the real part and the modulus of the eigenvalues of a Schrödinger operator with a complex-valued potential. 相似文献
60.
CMOS scaling into the nanometer regime 总被引:11,自引:0,他引:11
Yuan Taur Buchanan D.A. Wei Chen Frank D.J. Ismail K.E. Shih-Hsien Lo Sai-Halasz G.A. Viswanathan R.G. Wann H.-J.C. Wind S.J. Hon-Sum Wong 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1997,85(4):486-504
Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling 相似文献