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141.
The design and evaluation of an optically triggered, fully integrated sample and hold circuit (OS/H) is described. Measured results are presented that demonstrate operation of this circuit at 250 Ms/s and with effective resolution approaching 8 bits. The integrated circuit, which measures 2.1 mm×1.4 mm, is realized in -1.0-V threshold, 20-GHz ft GaAs MESFET technology, consumes approximately 200 mW of power, and requires one optical address. The OS/H will find applications in high precision, hybrid, and integrated signal processing systems where high speed, high levels of parallelism, and low timing jitter are important. Measured results of a series photoconducting (Auston switch) OS/H realized in the same technology are presented for comparison purposes  相似文献   
142.
In this paper we investigate the impact of finite laser linewidths (i.e. source partial coherence) on the crosstalk performance of optical frequency division multiplexing (OFDM) networks employing single-cavity Fabry-Perot demultiplexers. Results are presented that show the important limitation imposed by the finite laser linewidths on the attainable bit error rate (BER), maximum number of users, and the required power penalties to overcome this impairment  相似文献   
143.
Recent developments of stability control in mines, essentially based on Ge-doped fiber Bragg gratings (FBG) are reported including results about the different aspects of the system: accurate characterizations of FBG, sensor network topology and multiplexing method, user interface design and sensor packaging  相似文献   
144.
Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams  相似文献   
145.
The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process  相似文献   
146.
We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices  相似文献   
147.
Polarized light leads to an effective reorientation of the optic axis in the glassy state of liquid-crystalline side chain polymers containing azobenzene mesogenic groups, via a trans-cis and cis-trans isomerization. Using a combination of U V and IR dichroitic studies it is shown for copolymers consisting of chromophores (azobenzene) and non-chromophores (phenylbenzoate) that only the chromophores are reoriented by light as far as the glassy state is concerned. Individual chromophores are thus addressed by photoselection. Photoselection in the fluid nematic state, on the other hand, leads also to a reorientation of the non-chromophores.  相似文献   
148.
The reaction of CH3 with OH has been studied near 1200 K and 1 atmosphere pressure in shock tube experiments in which UV absorption was used to monitor [OH]. A rate coefficient of (1.1 ± 0.3) × 1013 cm3/mol-s was measured for removal of OH by CH3. This measured value is compared with previous experimental data and calculations. Several possible reaction channels are discussed, and although products were not monitored, it seems probable, on the basis of other work and theoretical estimates, that the primary mechanism (?75%) for the removal of OH by CH3 at these conditions is their combination to form CH3OH. Rate coefficients of (5.3 ± 0.8) × 1012 and (9.0 ± 1.4) × 1012 cm3/mol-s were measured for the reactions of OH with acetone and ethane, respectively, at the same temperature and pressure.  相似文献   
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