Low‐Temperature,Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) precursor solution, the solvent is composed of water without additional organic additives and catalysts. The thermogravimetric analysis indicates that the annealing temperature can be lowered by prolonging the annealing time. A systematic study is carried out to reveal the annealing condition dependence on the performance of the thin‐film transistors (TFTs). The WI indium‐zinc oxide (IZO) TFT integrated on SiO₂ dielectric, annealed at 300 °C for 2 h, exhibits a saturation mobility of 3.35 cm² V^?1 s^?1 and an on‐to‐off current ratio of ≈10⁸. Interestingly, through prolonging the annealing time to 4 h, the electrical parameters of IZO TFTs annealed at 230 °C are comparable with the TFTs annealed at 300 °C. Finally, fully WI IZO TFT based on YO_x dielectric is integrated and investigated. This TFT device can be regarded as “green electronics” in a true sense, because no organic‐related additives are used during the whole device fabrication process. The as‐fabricated IZO/YO_x TFT exhibits excellent electron transport characteristics with low operating voltage (≈1.5 V), small subthreshold swing voltage of 65 mV dec^?1 and the mobility in excess of 25 cm² V^?1 s^?1.     

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials have been extensively studied for use in low‐cost and high‐performance thin‐film transistors (TFTs). Here, scandium oxide (ScO_x) is fabricated as a TFT dielectric with excellent electrical properties using a novel water‐inducement method. The thin films are annealed at various temperatures and characterized by using X‐ray diffraction, atomic‐force microscopy, X‐ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScO_x thin film exhibits a low‐leakage current density of 0.2 nA cm^?2 at 2 MV cm^?1, a large areal capacitance of 460 nF cm^?2 at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScO_x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n‐type InZnO (IZO) and p‐type CuO TFTs for testing. The water‐induced full oxide IZO/ScO_x TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm² V^?1 s^?1, a large current ratio (I_on/I_off) of 2.7 × 10⁷ and high stability. Moreover, as far as we know it is the first time that solution‐processed p‐type oxide TFTs based on a high‐k dielectric are achieved. The as‐fabricated p‐type CuO/ScO_x TFTs exhibit a large I_on/I_off of around 10⁵ and a hole mobility of 0.8 cm² V^?1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution‐processed p‐type TFTs, which represents a great step towards the achievement of low‐cost, all‐oxide, and low‐power consumption CMOS logics.     

Hot-carrier-induced degradation of LDD polysilicon TFTs

In order to improve the stability of polysilicon thin-film transistors (TFTs) several drain junction architectures have been proposed. In this paper, the hot-carrier (HC) related stability of the lightly doped drain (LDD) TFT architecture is analyzed by using an iterative algorithm that relates the HC induced damage to the carrier injection across the device interfaces with gate and substrate oxide. The resulting creation of interface states and trapped charge is taken into account by using a system of rate equations that implements mathematically the Lais two step model, in which the generation of interface states is attributed to the trapping of hot-holes by centres into the oxide followed by the recombination with hot electrons. The rate equations are solved self-consistently with the aid of a device simulation program. By successive iterations, the time evolution of the interface state density and positive trapped charge distribution has been reconstructed, and the electrical characteristics calculated with this model are in good agreement with experimental data. This algorithm represent an improvement of an already proposed degradation model, in which the interface states formation dynamics is accounted by using a phenomenological approach. The present model has been applied to reproduce the degradation pattern of LDD TFTs and it is found that generation of interface states proceed almost symmetrically on the front and back device interfaces, starting from the points in which the transverse electric field peaks, and moving toward the drain side of the device. The final interface states distribution determines a sort of "bottleneck" in the active layer carrier density, that can explain the sensitivity to HC induced damage of both transfer and output characteristics.     

Optosensing of hydrogen sulphide through paper impregnated with lead acetate

Summary A flow-through optosensing method for hydrogen sulphide analysis is described, which involves reflectance measurements through optical fibres on paper impregnated with lead acetate. Levels as low as 50 ppb H₂S could be measured with high reproducibility within 10 s. The response was affected by flow rate and relative humidity, both of which were controlled during the measurement process. The method provides a sensitive real-time analysis of hydrogen sulphide and could be carried out remote from the instrumentation system.

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Schwefelwasserstoffbestimmung durch Bleiacetat-imprägniertes Papier mit Hilfe eines optischen Sensors

     

Sharp line photoconductivity in Si: S

Fine structure due to photothermal processes has been studied in the photoconductivity spectrum Si: S. For three levels (transitions of neutral donors with binding energies 109.5, 187.2 and 318.4 meV) excited states up to and including 4 p_± are observed with linewidths limited by system resolution (? 0.2 meV). A new level is also tentatively identified with binding energy 0.155 eV. Resonance structure is observed in the continuum spectra of the two deepest levels due to excited state phonon replicas. The effect of electric fields up to 2 kV cm^-1 is reported: the threshold shifts to lower energies, and highly excited states disappear, and a new line is observed.     

Complessità e dinamica della scoperta scientifica

Conferenza tenuta il giorno 27 Aprile 1998     

Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin-film transistors with different LDD doping concentration

Different drain field architectures have been recently investigated to reduce field-enhanced effects in conventional self-aligned polysilicon thin-film transistor (TFT) architecture, induced by the intense electric fields at the drain junction. Among these, gate overlapped lightly doped drain (GOLDD) architecture has been shown to be effective in reducing the drain field in both on and off states of the TFT, without introducing appreciable series resistance effects. In this paper, we investigate the electrical characteristics, both in the on- and in the off-regime, of GOLDD polysilicon TFTs, made with different LDD doses, by combining experimental data with two-dimensional (2-D) numerical analysis. We also demonstrate that both the on-state and off-state features of the GOLDD structure can be readily understood in terms of a simple, new model, based upon two TFTs series. This is consistent both with the experimental data and the results of full 2-D simulations. This paper not only clarifies the dependence of kink effect, leakage current, and series resistance upon the LDD-doping, but also provides the guidelines to optimize physical parameters of GOLDD TFTs.     

Novel Trinor-eremophilanes (Dendryphiellin B,C, and D), Eremophilanes (Dendryphiellin E,F, and G), and Branched C9-Carboxylic Acids (Dendryphiellic Acid A and B) from the Marine Deuteromycete Dendryphiella salina (SUTHERLAND) PUGHet NICOT

Further investigation of global extracts from cultures of the marine deuteromycete Dendryphiella salina leads to the isolation of three novel trinor-eremophilanes esterified by branched C₉-carboxylic acids, dendryphiellin B (= (+)-(1R*,2S*,7R*,8aR*)-1,2,6,7,8,8a-hexahydro-7-hydroxy-1,8a-dimethyl-6-oxonaphthalen-2-yl (6R*, 2E, 4E)-6-hydroxy-6-methylocta-2,4-dienoate; (+)- 2 ), dendryphiellin C (=(+)-(1R*, 2S*, 7R*, 8aR*)-1,2,6,7,8,8a-hexa-hydro-7-hydroxy-1,8a-dimethyl-6-oxonaphthalen-2-yl (6S, 2E, 4E)-6-methylocta-2,4-dienoate; (+)- 3 )), and dendryphiellin D (=(+)-(1R*, 2S*, 7R*, 8aR*)-1,2,6,7(8,8a-hexahydro-7-hydroxy-1,8a-dimethyl-6-oxonaphthalen-2-yl (6R*,2E,4E)-6-(hydroxymethyl)octa-2,4-dienoate; (+)- 4 ). An intact eremophilane, dendryphiellin E ( 5 ), and its ethanolysis product dendryphiellin F whose absolute configuration is represented by structural formula (+)- 6 are also isolated from the above extracts. Dendryphiellin E exists as an open form 5a in equilibrium with a closed form 5b . A similar equilibrium exists between the open form 8a and the closed form 8b of a non-esterified eremophilane, dendryphiellin G ( 8 ), which is isolated too from the above extracts and proves structurally related to the cyclic portion of 5 . Finally, the free, branched C₉-carboxylic acids dendryphiellic acid A ((+)- 9 ) and B ((+)- 10 ) which correspond to side chains of the above esterified terpenes are also isolated from the above extracts.