Reduction‐Sensitive Dextran Nanogels Aimed for Intracellular Delivery of Antigens

Targeting of antigens to dendritic cells (DCs) to induce strong cellular immune response can be established by loading in a nano‐sized carrier and keeping the antigen associated with the particles until they are internalized by DCs. In the present study, a model antigen (ovalbumin, OVA) is immobilized in cationic dextran nanogels via disulfide bonds. These bonds are stable in the extracellular environment but are reduced in the cytosol of DCs due to the presence of glutathione. Reversible immobilization of OVA in the nanogels is demonstrated by the fact that hardly any release of the protein occurred at pH 7 in the absence of glutathione, whereas rapid release of OVA occurs once the nanogels are incubated in buffer with glutathione. Furthermore, these OVA conjugated nanogels show intracellular release of the antigen in DCs and boost the MHC class I antigen presentation, demonstrating the feasibility of this concept for the aimed intracellular antigen delivery.     

Pseuduvarines A and B, two new cytotoxic dioxoaporphine alkaloids from Pseuduvaria rugosa

Pseuduvarines A (1) and B (2), two new dioxoaporphine alkaloids with an amino moiety, were isolated from the stem bark of Pseuduvaria rugosa and their structures were elucidated by combination of 2D-NMR spectroscopic analysis. Pseuduvarines A (1) and B (2) showed cytotoxicity against MCF7, HepG2, and HL-60 (1: IC??, 0.9, 21.7, and >50.0 μM, respectively, 2: IC?? >50.0, 15.7, and 12.4 μM, respectively).     

Platinum-nanogaps for single-molecule electronics: room-temperature stability

We present the formation of single-molecule devices based on nanometre-spaced platinum electrodes. The electrodes are fabricated using a self-breaking electromigration method which yields nanogaps with long-term stability at room temperature [Prins et al., APL, 2009, 94, 123108.]. The stability at room temperature allows for detailed comparison of the device electrical properties before and after deposition of the molecules. In this way, conductance as a result of direct tunneling between the electrodes can be distinguished from conductance through the molecule. After molecule deposition, some devices display transport in the strong coupling regime while others are in the weak-coupling Coulomb blockade regime. Gated transport is observed in the latter case.     

Scaled silicon MOSFETs: degradation of the total gate capacitance

We use a fully quantum-mechanical model to study the influence of image and exchange-correlation effects on the inversion layer and total gate capacitance in scaled Si MOSFETs. We show that, when the device is in weak and moderate inversion, the inclusion of image and many-body exchange-correlation effects increases both the inversion layer and total gate capacitances and shifts the N_s=N_s(VG) characteristics of the device toward lower gate voltages     

On the physics and modeling of small semiconductor devices—IV. Generalized,retarded transport in ensemble Monte Carlo techniques

It is shown that the ensemble Monte Carlo technique, in which an ensemble of electrons is utilized and all averages of dynamic variables are computed as ensemble averages, is a numerical solution to generalized equations of motion involving memory effects. Balance equations are also obtained having the same feature. Moreover, these show the importance of initial-state correlations in delaying the initial accelerative effect of the fields.     

The Wigner distribution function

In this letter, the relationship between the characteristic function for two arbitrary noncommuting observables and a generalized Wigner distribution function is established. This distribution function is shown to have no simple interpretation in the sense of probability theory but, in lieu of its special properties, can be used directly for calculating the expectation values of observables.     

Rubber networks containing unattached macromolecules. III. Nonlinear stress relaxation in the system ethylene–propylene terpolymer with ethylene–propylene copolymer and behavior of extracted networks

Further stress relaxation experiments, mostly at 50°C, are reported on mixtures of crosslinkable ethylene–propylene terpolymer with saturated ethylene–propylene copolymer (molecular weights 3.6 and 45 × 10⁴) containing up to 50% by weight of copolymer, crosslinked by sulfur to leave the saturated copolymer unattached and free to reptate in the copolymer network. Stress relaxation was measured in small simple elongations (stretch ratio about 1.15) on samples which had been extracted to remove a large part of the unattached copolymer and dried. The relative increase in modulus at long times (10⁴ sec) increased with the proportion extracted; at short times (1 sec), extraction of the lower molecular weight copolymer increased the modulus to about the same extent but extraction of the higher molecular weight copolymer affected it very little. The relaxation modulus of the copolymer extracted from sample 50H (50% copolymer of high molecular weight), obtained by difference, agreed with that for the total copolymer except for a small difference probably attributable to molecular weight selectivity in the extraction. Stress relaxation was measured on sample 50H at six higher elongations up to a stretch ratio of 3. The dependence of stress on time and strain was consistent with an analysis based on the following assumptions: (a) linear additivity of the network and unattached copolymer contributions, (b) strain–time factorization of the stress contributions from the individual components, (c) a strain dependence for the unattached component corresponding to the presence of a Mooney–Rivlin C₂ term only, (d) a strain dependence for the network component which does not follow the Mooney–Rivlin equation but is dominated by a simple neo-Hookean term.     

Transient switching behavior of the resonant-tunneling diode

A quantum mechanical analysis is used to treat the transient behavior of the resonant-tunneling diode (RTD). The use of the Wigner formalism permits inclusion of the quantum mechanics inherent in the device, while offering a Boltzmann-like equation that is rather easily implemented. Self-consistent treatment of the potential introduces plasma oscillations in the distribution, which leads to the oscillatory current transient. Fourier analysis of this transient indicates that the RTD behaves inductively at frequencies under 2 THz, consistent with the ballistic nature of the carriers. At higher frequencies, the dominant mechanism is the capacitive charging and discharging of the quantum well, which leads to capacitive behavior of the device. The real part of the conductance is negative for frequencies under 1.5 THz, and positive for higher frequencies. The critical frequencies are shown to be independent of the relaxation time used to model dissipation, although the magnitude of the conductance decreases as the dissipation increases