Syntheses of chromium pentacarbonyl derivatives of arsenic(V) and antimony(V). contrasting chemical reactivity with organic halogen derivatives

We have synthesized a new series of chromium-group 15 dihydride and hydride complexes [H(2)As(Cr(CO)(5))(2)](-) (1) and [HE(Cr(CO)(5))(3)](2)(-) (E = As, 2a; E = Sb, 2b), which represent the first examples of group 6 complexes containing E-H fragments. The contrasting chemical reactivity of 2a and 2b with organic halogen derivatives is demonstrated. The reaction of 2a with RBr (R = PhCH(2), HC triple bond CCH(2)) produces the RX addition products [(R)(Br)As(Cr(CO)(5))(2)](-) (R = PhCH(2), 3; R = C(3)H(3), 4), while the treatment of 2b with RX (RX = PhCH(2)Br or HC triple bond CCH(2)Br, CH(3)(CH(2))(5)C(O)Cl) forms the halo-substituted complexes [XSb(Cr(CO)(5))(3)](2-) (X = Br, 5; X = Cl, 6). Moreover, the dihaloantimony complexes [XX'Sb(Cr(CO)(5))(2)](-) can be obtained from the reaction of 2b with the appropriate organic halides. In this study, a series of organoarsenic and antimony chromium carbonyl complexes have been synthesized and structurally characterized and the role of the main group on the formation of the resultant complexes is also discussed.     

CO在铜基催化剂上活化及助催剂作用本质的量子化学研究

提出了CO在助促和非助促的铜基催化剂上吸附活化的两种活性中心原子族模型Cu_5和Cu_4M~(n+)O。应用电荷自洽离散变分X_a近似计算方法对CO在这两种模型上活化本质,并对过渡金属助催剂离子M~(n+)(从ⅣA—ⅧA族中各选一个V~(3+),Ti~(3+),Fe~(3+),Mn~(2+),Mo~(4+))与合成甲醇铜基催化剂上金属铜原子相互作用的本质及其对CO活化的效应进行量子化学研究。计算表明CO是以碳端吸附在活性中心模型Cu_4M~(n+)O中的Cu(1)原子上,并向助催剂M~(n+)离子倾斜45°。从吸附态CO—Cu_5和CO—Cu_4M~(n+)O的原子簇轨道,态密度以及C—O间重选集居数的计算结果指出,CO分子受到活化。助催剂与催化剂中铜原子间相互作用影响了铜原子的价态,改变体系E_f能级,改善了前线轨道HOMO与CO 2π~*轨道的匹配,从而增加d电子的反馈,降低CO间的重选集居数,促进了CO的活化。     

Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emitter ledge is a crucial issue and should be carefully considered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 Aring     

A Novel Pt/In0.52Al0.48As Schottky Diode-Type Hydrogen Sensor

On the basis of a Pt/In_0.52Al_0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In_0.52Al_0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H₂/air gas and V_R=-0.5 V at 30 degC), large current variation of 310 muA (under the 1% H₂/air gas and V_R=-5 V at 200 degC), widespread reverse-voltage regime (0~-5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Omega, respectively (under the 1% H₂/air gas at 30 degC). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H₂/air and 30 degC-250 degC, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications     

A better technique using multisegment modeling and analysis of high-density and high-speed connectors

A useful and rather new simulation technique for connectors up to 6.25 GHz is presented and discussed in this paper. The proposed model extracts electrical parameters of a connector using time-domain reflectometry (TDR) measurements. A new technique was developed to obtain accurate impedance profiles using TDR and a multisegment approach that is effectively a distributed coupled model. The parameter extraction and characterization of connectors are discussed. The performance of the proposed segmented transmission line model is verified by simulation of the model in SPICE and by experimental measurement. The results show that the proposed model can simulate the electrical characteristics, including crosstalk and impedance, of high-density and high-speed connectors with satisfactory accuracy. Based on the proposed modeling and CAD simulators, the design and analysis of complicated high-density and high-speed connectors can be executed accurately and effectively. Compared with other previous models, the proposed model can significantly improve the accuracy of simulation.     

激光扫描测量信号边界检出方法研究

信号边界检出是激光扫描测量系统实现稳定和高精度测量的关键技术之一.本文对标准电平切割法和二次微分法等边界检出方法的特点进行了分析和比较.基于光电共轭原理,设计了一种可实现光电共轭信号边界检出的新型电路,并使用仿真软件Multisim对该电路进行了动态仿真,表明该电路采用测量信号的自共轭函数作为参考基准,通过确定两共轭交点可稳定实现信号的边界检出.实验验证了该甄别电路,具有灵敏度高、自适应特性好的优点.     

太赫兹Si/SiGe量子级联激光器的能带设计

使用nextnano3模拟软件计算Si/Si1-xGex/Si量子阱的能带结构,对Si/SiGe量子级联激光器有源区的能带结构进行设计,结果表明使用Ge组分为0.27～0.3,量子阱宽度为3nm的SiGe合金与垒宽为3nm的Si层构成对称应变级联异质结构,有利于优化THz Si/SiGe量子级联激光器结构.