Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Verification of submodeling technique in thermomechanical reliability assessment of flip-chip package assembly

In this paper we verified the submodeling technique applied in the thermomechanical reliability assessment of a flip-chip BGA under accelerated thermal cycling test conditions. Since the steady-state creep model was implemented for the solder bump to better represent its realistic mechanical behavior, submodeling procedures developed specifically for path-dependent thermomechanical problems were considered. A detailed global model for the flip-chip BGA was built up to verify submodeling solutions. This model also served as a benchmark to examine solution discrepancies caused by different simplifications of the global model.     

成分和厚度的依赖

通过调整Mn的成分，系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质，特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时，对于150nm的Ni81Fe19，得到了最大的交换偏置场175kA/m，同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%；高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化，Mn含量越多，其晶格常数越大；制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni１００-xMnx厚度的变化，第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时，Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃，5h退火后，可以有80kA/m的交换偏置场，此时铁磁层磁矩的大小几乎不变. 关键词： Ni81Fe19/Ni100-xMnx 交换偏置场     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Combined effects of clay modifications and compatibilizers on the formation and physical properties of melt‐mixed polypropylene/clay nanocomposites

The melt mixing technique was used to prepare various polypropylene (PP)‐based (nano)composites. Two commercial organoclays (denoted 20A and 30B) served as the fillers for the PP matrix, and two different maleated (so‐called) compatibilizers (denoted PP‐MA and SMA) were employed as the third component. The results from X‐ray diffraction (XRD) and transmission electron microscope (TEM) experiments revealed that 190 °C was an adequate temperature for preparing the nanocomposites. Nanocomposites were achieved only if specific pairs of organoclay and compatibilizer were simultaneously incorporated in the PP matrix. For example, PP/20A(5 wt %)/PP‐MA(10 wt %) and PP/30B(5 wt %)/SMA(5 wt %) composites exhibited nanoscaled dispersion of 20A or 30B in the PP matrix. Differential scanning calorimetry (DSC) results indicated that the organoclays served as nucleation agents for the PP matrix. Generally, their nucleation effectiveness increased with the addition of compatibilizers. The thermal stability enhancement of PP after adding 20A was confirmed with thermogravimetric analysis (TGA). The enhancement became more evident as a suitable compatibilizer was further added. However, for the 30B‐included composites, thermal stability enhancement was not evident. The dynamic mechanical properties (i.e., storage modulus and loss modulus) of PP increased as the nanocomposites were formed; the properties increment corresponded to the organoclay dispersion status in the matrix. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 4139–4150, 2004     

Nowhere zero 4‐flow in regular matroids

Jensen and Toft 8 conjectured that every 2‐edge‐connected graph without a K₅‐minor has a nowhere zero 4‐flow. Walton and Welsh 19 proved that if a coloopless regular matroid M does not have a minor in {M(K_3,3), M*(K₅)}, then M admits a nowhere zero 4‐flow. In this note, we prove that if a coloopless regular matroid M does not have a minor in {M(K₅), M*(K₅)}, then M admits a nowhere zero 4‐flow. Our result implies the Jensen and Toft conjecture. © 2005 Wiley Periodicals, Inc. J Graph Theory     

Some Properties of Quasi-keep-range Operators and Their Applications

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Random switching techniques for inverter control

New techniques which dramatically reduce acoustic noise by randomising the inverter switching frequency for inverter control are presented. It is shown that the proposed techniques combine the advantages of conventional pulsewidth modulation (PWM) techniques based on regular-sampling techniques and random PWM techniques     

Process development and adhesion behavior of electroless copper on liquid crystal polymer (LCP) for electronic packaging application

Liquid crystal polymer (LCP) has potentially a very wide application as substrate material in electronic packaging applications because of its unique advantages. The work in this paper was performed to realize the metallization of LCP for the purpose of board fabrication, and to study the adhesion between deposited copper and LCP. A homogenous electroless plated copper layer on LCP with 4 to 5 /spl mu/m thickness was achieved, while it increased up to 40 /spl mu/m with the subsequent electroplating. The timescale of etching, deposit ion rate, and pH value were gradually changing during the plating process and the influences on copper layer quality were investigated. The adhesion force of the copper-LCP layer system was measured by a shear-off-method. Scanning electron microscopy (SEM) was used to check the surface morphology after etching and the interface after shearing on both the backside of the copper layer and the LCP side. The relationship between the shear-off adhesion of copper and the time of chemical etching before plating was examined, and the optimal etching time is discussed. Heat treatment after plating was used, and it was shown that this significantly improved the adhesion strength.