Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

This paper describes the Si-doping of GaAs that was grown using the AsCl₃:H₂:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl₃:SiCl₄ liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O¹⁶ to 2×10¹⁹ cm^?3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl₃:SiCl₄ doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n⁺ structures with order of magnitude changes occurring within 500 Å. For the 1×10₁₆ to 8×l0¹⁸ cm^?3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.     

Organic functionalization of the sidewalls of carbon nanotubes by diels-alder reactions: a theoretical prediction

[structure: see text] The viability of the Diels-Alder (DA) cycloaddition of conjugated dienes onto the sidewalls of single-wall carbon nanotubes is assessed by means of a two-layered ONIOM(B3LYP/6-31G:AM1) approach. Whereas the DA reaction of 1,3-butadiene on the sidewall of an armchair (5,5) nanotube is found to be unfavorable, the cycloaddition of quinodimethane is predicted to be viable due to the aromaticity stabilization at the corresponding transition states and products.     

Optical field concentration in low-index waveguides

We present a highly efficient optical field concentrator that is capable of confining optical field in nanometer-thin low-index media with very high optical confinement factor. The structure is made of multiple-layered low-index nanolayers embedded in high-index silicon waveguides. By creating multiple high-index-contrast interfaces, the normal field in the low-index nanolayer regions is significantly enhanced. It subsequently results in a very high optical confinement and power density in these regions. With the help of numerical simulation tools, the guiding and propagating characteristics of the new structure are studied and presented. The optimal structures have demonstrated confinement factors and normalized power densities in the range of 30%-60% and 20-160 /spl mu/m/sup -2/ for the 5-20-nm thin low-index multiple nanolayers.     

The transistor laser

A research team at the University of Illinois at Urbana-Champaign has developed a new, more powerful kind of device, called the transistor laser. The transistor puts out both electrical signals and a laser beam, which can be directly modulated to send optical signals at the rate of 10 billion bits per second. With some further modification, the transistor laser will eventually send a staggering 100 billion bits per second or more. Instead of using relatively slow wires to connect chips stacked together in packages, transistor lasers can be used as optical interconnects, which would let data flow instantaneously to and from memory chips, graphics processors, and microprocessors. There is much work ahead, but unlike the host of self-assembling, blue-sky nanotechnologies currently being touted as the next big thing in optoelectronics, transistor lasers do not need an entirely new fabrication infrastructure for further development or even to go into production.     

Enantioselective Hydrogenation of Endocyclic Enones:the Solution to a Historical Problem

The enantioselective hydrogenation of endocyclic enones has been a historical problem for homogeneous catalysis.We herein report an efficient method to reduce e...     

锗元素测定方法综述

锗在国防工业、航空航天和通信等领域中的战略性,锗含量的测定对于保证材料质量和满足国际标准至关重要。本文综述了锗含量测定方法的多种技术,包括分光光度法、原子荧光光谱法、原子吸收光谱法、电感耦合等离子体原子发射光谱法、电感耦合等离子体质谱法以及滴定法。在每个检测方法的介绍中,详细探讨了方法的原理、前处理步骤以及应用范围,并分别总结了各个方法的优势和不足。最后,强调了锗含量测定方法的意义,特别是在满足出口监管和促进科学研究方面的作用。同时对锗元素的测定方法进行了展望,为未来的发展提供了参考方向。     

Visible Light-Driven Alkyne-Grafted Ethylene-Bridged Azobenzene Chromophores for Photothermal Utilization

Molecular photoswitches are considered to be important candidates in the field of solar energy storage due to their sensitive and reversible bidirectional optical response. Nevertheless, it is still a daunting challenge to design a molecular photoswitch to improve the low solar spectrum utilization and quantum yields while achieving charging and discharging of heat without solvent assistance. Herein, a series of visible-light-driven ethylene-bridged azobenzene (b-Azo) chromophores with different alkyne substituents which can undergo isomerization reactions promoted in both directions by visible light are reported. Their visible light responsiveness improves their solar spectrum utilization while also having high quantum yields. In addition, as the compounds are liquids, there is no need to dissolve the compounds in order to exploit this switching. The photoisomerization of b-Azo can be adjusted by alkyne-related substituents, and hexyne-substituted b-Azo is able to store and release photothermal energy with a high density of 106.1 J·g⁻¹, and can achieve a temperature increase of 1.8 °C at a low temperature of −1 °C.     

振动噪声等高图的电驱动桥噪声预测及优化*

在项目开发前期通过优化电驱动桥扭矩特性的设计,可以规避噪声大问题。根据电驱动桥台架在对应扭矩下的振动噪声特性,提出了一套稳定高效的测试流程和分析方法。首先设计了一套完整的试验流程,制定了精准的数据分析方法。然后绘制出能够全面反映电驱动桥振动噪声特性的等高图。最后利用电驱动桥台架的振动噪声等高图,准确评估电驱动桥加速工况下振动噪声风险,为主机厂和电驱动桥零部件企业提供电驱动桥扭矩特性设计前期指导。利用该方法成功识别到某电驱动桥匀速及加速工况下电机及齿轮的啸叫问题。通过优化电驱动桥扭矩特性设计,电机48阶噪声峰值降低了8.5dB(A),确认该方法准确可靠,具备推广应用价值。     

A Novel Strategy for Regulating mRNA’s Degradation via Interfering the AUF1’s Binding to mRNA

The study on the mechanism and kinetics of mRNA degradation provides a new vision for chemical intervention on protein expression. The AU enrichment element (ARE) in mRNA 3′-UTR can be recognized and bound by the ARE binding protein (AU-rich Element factor (AUF1) to recruit RNase for degradation. In the present study, we proposed a novel strategy for expression regulation that interferes with the AUF1-RNA binding. A small-molecule compound, JNJ-7706621, was found to bind AUF1 protein and inhibit mRNA degradation by screening the commercial compound library. We discovered that JNJ-7706621 could inhibit the expression of AUF1 targeted gene IL8, an essential pro-inflammatory factor, by interfering with the mRNA homeostatic state. These studies provide innovative drug design strategies to regulate mRNA homeostasis.